The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The Kirk effect in type-II InP/GaAsSb DHBTs with spike-doped collectors is studied experimentally and theoretically. Accurate two-dimensional hydrodynamic (2D-HD) physical device simulations show that the Kirk threshold current in type-II DHBTs depends on negative conduction band offset (?EC) and is a function of the doping spike position in the InP collector. The optimal collector design can significantly...
The analytical model and measurement of InAlAs/InGaAs metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) lattice-matched to InP substrate with a thin InAlAs native oxide layer are compared and achieved a good agreement, which show the validity of the proposed MOS-HEMT model.
This paper presents a 60-GHz-band oscillator that uses an InP/InGaAs heterojunction phototransistor (HPT) based on heterojunction bipolar transistor technologies. The HPT oscillator can be optically injection-locked by directly illuminating the HPT from either the top or back of the substrate since it has a photocoupling window in the emitter electrode and a "transparent" InP subcollector...
The temperature dependence of avalanche breakdown voltage of InP-based separate absorption multiplication avalanche photodiodes (SAM APDs) was investigated for the first time. The work investigated APDs with InGaAs absorber and InP or InAlAs multiplication region. Effects of SAM APD design parameters such as absorber width, multiplication region width, and electrical file profile on the avalanche...
InAs layers were deposited on glass and plastic (polyimide) film substrates by molecular-beam deposition at substrate temperatures of 180-280 ?C. Atomic force microscopy revealed flat surfaces with RMS roughness of about 10 nm. X-ray diffraction patterns indicated that the InAs layers are polycrystalline textured in the (111) plane with crystallite sizes around 30 nm. Hall effect measurements showed...
Compositional grading at hetero-interfaces in InP/Ga0.47In0.53As/InP structures was investigated utilizing X-ray CTR (crystal truncation rod) scattering method. InP/ Ga0.47In0.53As/InP structures were grown on InP(001) substrate by OMVPE (organometallic vapor phase epitaxy). TBAs-, H2-, and TBP-flushing were carried out with various flushing times after the growth of the GaInAs layers. The CTR analysis...
We have successfully developed a fabrication process for OEICs in which each device structure and performance can be optimized. We integrated InGaAs/InP HBTs and InP-passivated InGaAs pin PDs on a semi-insulating InP substrate using multi-epi growth process. For the PDs with a 60 ?m mesa diameter, the capacitance of 0.2 pF and the dark current of 0.1 nA at a reverse bias voltage of 5 V were obtained...
TIGalnNAs-based DQW structures grown at various growth parameters were studied by secondary ion mass spectroscopy (SIMS). Enhanced Tl incorporation could be obtained using TlGaNAs barriers. A direct relationship between the Tl incorporation and N composition is clearly established by the analysis of the effect of growth temperature, growth rate, ECR power and nitrogen flow rate. The Tl incorporation...
Multilayered self-assembled quantum dot (SAQD) structures are indispensable for increasing the SAQD density in practical device applications. The electronic and optical natures of these structures are affected by the spacer-layer thickness; the electronic states in SAQDs can couple vertically with decreasing the thickness. We have confirmed the control of optical emission from such coupled SAQDs,...
We manufactured an optically active InP-on-insulator structure using spin-on-glass bonding. A nine-fold improvement of photoluminescence was obtained by patterning a photonic crystal with graphite lattice into the InP layer.
Tunable laser structures with nanosecond switching time between wavelength channels and low-power injection locking are demonstrated on a low-cost platform. These lasers are suitable as source or slave lasers in WDM passive optical access networks.
In this work, the dc performance of InP/InAlAs/GaAsSb/InP DHBTs were characterized in the temperature range of 300 K to 420 K. The device transport mechanisms in DHBTs with a type-I E-B junction and a type-II B-C junction were studied. The experimental results indicate that electron injection at E-B junction could be affected by conduction barrier limited carrier transport. The conduction band offset...
We report the measured temperature dependence of gain characteristics in p-doped 1.3-μm quantum-dot lasers and indicate the relationship between their temperature-stability around room temperature and behavior of holes at the ground-state supplied by p-doping.
Mid-infrared laser sources are highly desired for laser-based trace chemical sensors, military countermeasures, free-space communications, as well as developing medical applications. While application development has been limited by the availability of adequate mid-infrared sources, InP-based Quantum Cascade Lasers (QCLs) hold promise as inexpensive, miniature, portable solutions capable of producing...
A dash-in-a-well design was employed to realise low threshold high efficiency lasers in the InAs/InGaAlAs/InP material system emitting near 1.55 μm. A processed 1.0 mm long and 5 μm wide as-cleaved and un-mounted Fabry Perot device reveals a threshold current as low as 47 mA, a total external efficiency of 0.36 W/A and a maximum total output power of 58 mW in cw operation at room temperature. The...
We fabricated electroabsorption modulated distributed feedback (DFB) laser diodes for 40 Gbps application through selective-area growth method. The facet reflection was not sufficiently removed by just depositing anti-reflection coating on the as-cleaved facet and low frequency resonance occurred by optical feedback from facet to DFB laser. Tilted facet formed by dry etching processes successfully...
Low residual stress and high repeatability of plasma enhanced chemical vapor deposited SiNx thin films were obtained by optimizing dual radio frequency power source and eliminating influence of dielectric films formerly deposited on chamber wall.
Pure HBr ICP etching is investigated to realize ridge waveguides on InP substrate. The ICP power is the main parameter controlling the anisotropy. Vertical sidewalls, smooth etched surface, and moderate etch rate are obtained under optimized pressure and temperature conditions. The process is applied to the realization of InAs/InP QDs DFB lasers with a lateral metallic Bragg grating.
A Schottky-contact triangular-barrier optoelectronic switch (STOS), grown by molecular beam epitaxy (MBE), has been fabricated. The triangular barrier, formed by inserting an InGaAs delta-doped (delta-doped) quantum well into an n--GaAs layer, provides a potential well for hole accumulation. Due to the hole accumulation in the delta-doped well and the sequential avalanche multiplications in the reverse-biased...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.