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Epitaxial lift-off (ELO) is a disruptive technology that can enable substantial performance enhancement and cost reduction for epitaxially grown III-V devices [1],[2],[3],[4]. MicroLink Devices, Inc (MLD) is a recognized technological leader in the field of compound semiconductor growth and high efficiency solar cell manufacturing. ELO is a process that involves selectively etching a “release” layer...
Large area (20 cm2) epitaxial lifted-off (ELO) triple junction (TJ) solar cells based on inverted metamorphic (IMM) InGaP/GaAs/InGaAs were fabricated. These TJ IMM ELO solar cells exhibited efficiency >29% at one sun AM0 illumination, which is the highest reported efficiency for IMM ELO thin cells to date. The cells had fill factor >85%, open circuit voltage (Voc) = 2.93 V, and short circuit...
InGaP/GaAs dual junction (DJ) solar cells were fabricated on epitaxial liftoff (ELO) 100 mm diameter GaAs wafers. These ELO DJ cell wafers have total semiconductor thickness less than 5 ??m and weigh less than 1.7 g. The best solar cells exhibited an efficiency of 28.69% at one sun AM1.5D illumination, which is the highest reported efficiency for DJ ELO thin cells to date. The DJ ELO cells had fill...
GaAs single junction solar cells were fabricated on epitaxial liftoff (ELO) 4:″ GaAs wafers. 1 cm2 single junction GaAs solar cells have been fabricated with a yield ≫80% across full 4″ ELO wafers. Photoluminescence studies of ELO GaAs wafers showed no evidence of residual strain in the layers as indicated by single peak at 870 nm at 300 K. Transmission electron microscopy studies of ELO solar cells...
InP/GaAsSb DHBT typically show a lower dc current gain to base sheet ratio in comparison to conventional InP/InGaAs DHBT, which limits the efficiency performance of InP/GaAsSb DHBT. A significant improvement in the dc current gain to base sheet ratio was achieved by inserting a pseudomorphic InGaP emitter spacer layer.
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