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GaAs single junction solar cells were fabricated on epitaxial liftoff (ELO) 4:″ GaAs wafers. 1 cm2 single junction GaAs solar cells have been fabricated with a yield ≫80% across full 4″ ELO wafers. Photoluminescence studies of ELO GaAs wafers showed no evidence of residual strain in the layers as indicated by single peak at 870 nm at 300 K. Transmission electron microscopy studies of ELO solar cells...
InP/GaAsSb DHBT typically show a lower dc current gain to base sheet ratio in comparison to conventional InP/InGaAs DHBT, which limits the efficiency performance of InP/GaAsSb DHBT. A significant improvement in the dc current gain to base sheet ratio was achieved by inserting a pseudomorphic InGaP emitter spacer layer.
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