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We report the first demonstration of GaN-on-diamond RF power transistors produced by low-temperature substrate bonding technology. GaN high-electron-mobility transistors (HEMTs) are lifted from the original SiC substrate post fabrication and transferred onto high-quality polycrystalline diamond with thermal conductivity of 1,800–2,000 W/mK. Resulting GaN-on-diamond HEMTs demonstrated DC current density...
Presents the introductory welcome message from the conference proceedings. May include the conference officers' congratulations to all involved with the conference event and publication of the proceedings record.
Cornell, and engineering science, truly has lost a one-of-a-kind leader and teacher. Lester F. Eastman B.S./M.S. '53 and Ph.D. '57 John L. Given Professor of Engineering, emeritus died on August 9, 2013 at the age of 85. Since then, there has been an outpouring of condolences, as well as appreciation from his vast community of scientists, engineers, educators, industrial colleagues, and friends from...
The Best Student Paper Award was presented to: Cheng-Ying Huang1, Sanghoon Lee, Varistha Chobpattana, Susanne Stemmer, Arthur C. Gossard, and Mark J.W. Rodwell for "Leakage Current Suppression in InGaAs-Channel MOSFETs: Recessed InP Source/Drain Spacers and InP Channel Caps." The Best Poster Award was awarded to: S. Wienecke, M. Guidry, H. Li, E. Ahmadi, K. Hestroffer, X. Zheng, S. Keller,...
A 1200V, 25A bi-directional silicon UMOS-IGBT has been successfully fabricated and characterized using a hydrophobic bonding process at low temperature (400°C) for the first time. The static and dynamic performance of our previous bi-directional DMOS-IGBT using a new developed bonding approach with glass carrier wafers are also shown in this paper as a comparison.
Because InGaAs has a small bandgap, InGaAs MOSFETs are vulnerable to large band-to-band tunneling currents, arising near the drain end of the channel. This sets a minimum off-state leakage current, and can render the device unsuitable for VLSI applications at sub-10-nm gate lengths. Here we report two techniques to reduce band-to-band tunneling leakage in InGaAs MOSFETs. By using either a recessed...
SnO2 nanoparticles possess optical and electrical properties that make them suitable for the fabrication of UV photodetectors. This paper presents the material fabrication and characterization followed by the device fabrication and characterization of a SnO2 colloidal nanoparticles based ultraviolet photodetector. The fabricated detector exhibits a high signal to noise ratio of 5.8 × 103 low dark...
Epitaxial lift-off (ELO) is a disruptive technology that can enable substantial performance enhancement and cost reduction for epitaxially grown III-V devices [1],[2],[3],[4]. MicroLink Devices, Inc (MLD) is a recognized technological leader in the field of compound semiconductor growth and high efficiency solar cell manufacturing. ELO is a process that involves selectively etching a “release” layer...
Thin-film coatings for improved performances of GaN-based HEMTs are investigated. AlN coatings are used either as primary or secondary passivation to reduce the thermal resistance of the transistors.
An evident correlation between the high injection and the efficiency droop is demonstrated in GaInN light-emitting diodes (LEDs) for temperature ranging from 80K to 450K. For this temperature range, the efficiency droop has the same thermal tendency with the high injection, i.e. the onset shifts to lower voltage and higher current with increasing temperature. The voltage difference between two onsets...
In this work, we developed (1) an offset-overhanging Y-shaped gate structure to reduce the electric field at gate-edge, and demonstrated (2) low current collapse of InGaN back barrier structure that improved off-state breakdown voltage. In addition, we adopted (3) an InAlN electron-supplying layer to enhance the drain current. The fabricated InAlN/GaN HEMTs with 80-nm gates showed a high off-state...
This paper proposes and analyzes a new type of double graphene-layer (DGL) heterostructure devices for terahertz (THz) device applications. The DGL core-shell structure has a tunnel-barrier layer sandwiched between the outer gate stack layers. When the band offset is aligned to the THz photon energy, the DGL structure can mediate photon-assisted resonant tunneling, resulting in the resonant emission...
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