Search results for: Deji Akinwande

Items from 1 to 20 out of 65 results

article

Graphene Biointerface for Cardiac Arrhythmia Diagnosis and Treatment

Zexu Lin, Dmitry Kireev, Ning Liu, Shubham Gupta, more

Advanced Materials > 35 > 22 > n/a - n/a

Heart rhythm disorders, known as arrhythmias, cause significant morbidity and are one of the leading causes of mortality. Cardiac arrhythmias are frequently treated by implantable devices, such as pacemakers and defibrillators, or by ablation therapy guided by electroanatomical mapping. Both implantable and ablation therapies require sophisticated biointerfaces for electrophysiological measurements...

article

Mixed Ionic‐Electronic Charge Transport in Layered Black‐Phosphorus for Low‐Power Memory

Taimur Ahmed, Sruthi Kuriakose, Sherif Abdulkader Tawfik, Edwin L. H. Mayes, more

Advanced Functional Materials > 32 > 10 > n/a - n/a

Availability of computing will be strongly limited by global energy production in 1–2 decades. Computing consumes 4–5% of global electricity supply and continues to increase. This is underpinned by memory and switching devices encountering leakage as they are downscaled. Two‑dimensional (2D) materials offer a potential solution to the fundamental problem owing to carrier confinement which significantly...

article

Roll‐to‐Roll Dry Transfer of Large‐Scale Graphene

Nan Hong, Dmitry Kireev, Qishen Zhao, Dongmei Chen, more

Advanced Materials > 34 > 3 > n/a - n/a

A major challenge for graphene applications is the lack of mass production technology for large‐scale and high‐quality graphene growth and transfer. Here, a roll‐to‐roll (R2R) dry transfer process for large‐scale graphene grown by chemical vapor deposition is reported. The process is fast, controllable, and environmentally benign. It avoids chemical contamination and allows the reuse of graphene growth...

article

A Library of Atomically Thin 2D Materials Featuring the Conductive‐Point Resistive Switching Phenomenon

Ruijing Ge, Xiaohan Wu, Liangbo Liang, Saban M. Hus, more

Advanced Materials > 33 > 7 > n/a - n/a

Non‐volatile resistive switching (NVRS) is a widely available effect in transitional metal oxides, colloquially known as memristors, and of broad interest for memory technology and neuromorphic computing. Until recently, NVRS was not known in other transitional metal dichalcogenides (TMDs), an important material class owing to their atomic thinness enabling the ultimate dimensional scaling. Here,...

article

Disassembling Silicene from Native Substrate and Transferring onto an Arbitrary Target Substrate

Christian Martella, Gabriele Faraone, Muhammad Hasibul Alam, Deepyanti Taneja, more

Advanced Functional Materials > 30 > 42 > n/a - n/a

Here, two novel approaches for disassembling epitaxial silicene from the native substrate and transferring onto arbitrary target substrates are presented. From the processing perspective, the two methodologies open up a new route for handling silicene, and in general any epitaxial Xene, in view of establishing reliable process flows for the development of a Xene‐based nanotechnology. Integration of...

article

Thinnest Nonvolatile Memory Based on Monolayer h‐BN

Xiaohan Wu, Ruijing Ge, Po‐An Chen, Harry Chou, more

Advanced Materials > 31 > 15 > n/a - n/a

2D materials have attracted much interest over the past decade in nanoelectronics. However, it was believed that the atomically thin layered materials are not able to show memristive effect in vertically stacked structure, until the recent discovery of monolayer transition metal dichalcogenide (TMD) atomristors, overcoming the scaling limit to sub‐nanometer. Herein, the nonvolatile resistance switching...

article

75 Years of the Device Research Conference—A History Worth Repeating

Aaron D. Franklin, Debdeep Jena, Deji Akinwande

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 116 - 120

At a time when the scientific community is overrun with conferences, workshops, and congresses to discuss all facets of innovation, much can be learned from considering a meeting that has withstood the test of time: the Device Research Conference (DRC). The DRC has been the launching pad for many game-changing innovations, from early transistors to new electronic materials. While the conference has...

article

Optothermoplasmonic Patterning: Optothermoplasmonic Nanolithography for On‐Demand Patterning of 2D Materials (Adv. Funct. Mater. 41/2018)

Linhan Lin, Jingang Li, Wei Li, Maruthi N. Yogeesh, more

Advanced Functional Materials > 28 > 41 > n/a - n/a

In article number 1803990, Deji Akinwande, Yuebing Zheng, and co‐workers develop a simple and low‐power optical technique – optothermoplasmonic nanolithography – for the versatile optical patterning of a variety of two‐dimensional (2D) atomically thin materials. The patterning arises from the thermal oxidation and sublimation of 2D materials at the laser‐directed localized thermoplasmonic hotspots...

article

Optothermoplasmonic Nanolithography for On‐Demand Patterning of 2D Materials

Linhan Lin, Jingang Li, Wei Li, Maruthi N. Yogeesh, more

Advanced Functional Materials > 28 > 41 > n/a - n/a

Since the first discovery of graphene, 2D materials are drawing tremendous attention due to their atomic thickness and superior properties. Fabrication of high‐quality micro‐/nanopatterns of 2D materials is essential for their applications in both nanoelectronics and nanophotonics. In this work, an all‐optical lithographic technique, optothermoplasmonic nanolithography (OTNL), is developed to achieve...

article

Recent Progress on Stability and Passivation of Black Phosphorus

Yohannes Abate, Deji Akinwande, Sampath Gamage, Han Wang, more

Advanced Materials > 30 > 29 > n/a - n/a

From a fundamental science perspective, black phosphorus (BP) is a canonical example of a material that possesses fascinating surface and electronic properties. It has extraordinary in‐plane anisotropic electrical, optical, and vibrational states, as well as a tunable band gap. However, instability of the surface due to chemical degradation in ambient conditions remains a major impediment to its prospective...

chapter

Black phosphorus flexible thin film transistors and GHz circuit applications

Weinan Zhu, Deji Akinwande

2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO) > 925 - 927

2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)

Two-dimensional (2D) semiconductors have attracted significant interest in the last decade for applications in high speed and low power consumption nano electronics. Their intrinsic thickness scalability down to atomic layer and superior mechanical stiffness enabled novel applications in flexible nanosystems[1]. Black phosphorus (BP) captured immediate attention in electronics community owing to its...

chapter

2D nanoelectronics: From graphene to silicene and beyond

Deji Akinwande

2017 Silicon Nanoelectronics Workshop (SNW) > 129 - 130

2017 Silicon Nanoelectronics Workshop (SNW)

This research work describes progress towards 2D nanoelectronics based on atomic sheets such as graphene, M0S2, black phosphorus, silicene and related materials. These diverse 2D nanomaterials can afford a wide range of device capabilities including low-power transistors, high-speed devices, zero-power switches, and wearable sensors. In addition, silicene, the atomically-thin equivalent of bulk silicon...

article

A review on mechanics and mechanical properties of 2D materials—Graphene and beyond

Deji Akinwande, Christopher J. Brennan, J. Scott Bunch, Philip Egberts, more

Extreme Mechanics Letters > 2017 > 13 > Complete > 42-77

Since the first successful synthesis of graphene just over a decade ago, a variety of two-dimensional (2D) materials (e.g., transition metal-dichalcogenides, hexagonal boron-nitride, etc.) have been discovered. Among the many unique and attractive properties of 2D materials, mechanical properties play important roles in manufacturing, integration and performance for their potential applications. Mechanics...

chapter

Record fT, fmax, and GHz amplification in 2dimensional CVD MoS2 embedded gate fets

Atresh Sanne, Saungeun Park, Rudresh Ghosh, Maruthi Nagavalli Yogeesh, more

2017 IEEE International Symposium on Circuits and Systems (ISCAS) > 1 - 4

2017 IEEE International Symposium on Circuits and Systems (ISCAS)

We report on chemical vapor deposited (CVD) M0S2 radio frequency (RF) transistors with a record fT of 20 GHz and fmax of 11.4 GHz, and the largest high-field saturation velocity, Vsat = 1.88 × 106 cm/s, in MoS2 reported so far. The gate-first approach, facilitated by cm-scale CVD MoS2, offers enhancement mode operation, Ion/Ioff ratio of 108, and the highest reported transconductance (gm) of 70 μS/μm...

article

Foreword

Yong-Young Noh, Xiaojun Guo, Muhammad Mustafa Hussain, Zhenqiang Jack Ma, more

IEEE Transactions on Electron Devices > 2017 > 64 > 5 > 1878 - 1880

“Flexible electronics” has been thriving in the scholarly world as a buzz phrase for nearly two decades. A flourishing industry focusing on such physically bendable electronics is also growing rapidly. Specially, two major consumer electronics giants, Samsung and LG, have announced the arrival of organic light-emitting diode-based displays. Still, the focus is dominated by innovation in materials—more...

article

Recent development of two-dimensional transition metal dichalcogenides and their applications

Wonbong Choi, Nitin Choudhary, Gang Hee Han, Juhong Park, more

Materials Today > 2017 > 20 > 3 > 116-130

Recent advances in atomically thin two-dimensional transition metal dichalcogenides (2D TMDs) have led to a variety of promising technologies for nanoelectronics, photonics, sensing, energy storage, and opto-electronics, to name a few. This article reviews the recent progress in 2D materials beyond graphene and includes mainly transition metal dichalcogenides (TMDs) (e.g. MoS₂, WS₂, MoSe₂, and WSe...

article

Large area fabrication of graphene nanoribbons by wetting transparency-assisted block copolymer lithography

Reika Katsumata, Maruthi Nagavalli Yogeesh, Helen Wong, Sunshine X. Zhou, more

Polymer > 2017 > 110 > C > 131-138

Patterning graphene into nanoribbons (graphene nanoribbons, GNR) allows for tunability in the emerging fields of plasmonic devices in the mid-infrared and terahertz regime. However, the fabrication processes of GNR arrays for plasmonic devices often include a low-throughput electron beam lithography step that cannot be easily scaled to large areas. In this study, we developed a GNR fabrication method...

article

Temperature and Thickness Dependences of the Anisotropic In‐Plane Thermal Conductivity of Black Phosphorus

Brandon Smith, Bjorn Vermeersch, Jesús Carrete, Eric Ou, more

Advanced Materials > 29 > 5 > n/a - n/a

The anisotropic basal‐plane thermal conductivities of thin black phosphorus obtained from a new four‐probe measurement exhibit much higher peak values at low temperatures than previous reports. First principles calculations reveal the important role of crystal defects and weak thickness dependence that is opposite to the case of graphene and graphite due to the absence of reflection symmetry in puckered...

chapter

Laser-directed “bubble-pen” for nanoparticle patterning

Linhan Lin, Xiaolei Peng, Zhangming Mao, Wei Li, more

2016 Conference on Lasers and Electro-Optics (CLEO) > 1 - 2

2016 Conference on Lasers and Electro-Optics (CLEO)

We develop a new technique — bubble-pen lithography — to pattern colloidal particles on the plasmonic substrate in arbitrary architecture using optically controlled microbubbles.

chapter

State-of-the-art large area CVD MoS₂ based RF electronics

Maruthi N Yogeesh, Atresh Sanne, Saungeun Park, Hsiao-Yu Chang, more

2016 3rd International Conference on Emerging Electronics (ICEE) > 1 - 3

2016 3rd International Conference on Emerging Electronics (ICEE)

In this work we demonstrate state-of-the-art large area monolayer CVD M0S2 based RF transistors on both flexible and Si substrates. We report the highest RF performance (fT ∼ 5.9GHz and fmax ∼ 3.3GHz) among flexible MoS2 based thin film transistors. Our embedded gate CVD MoS2 transistors on CMOS compatible Si substrates shows record fT∼ 20GHz, fmax ∼ 11.4GHz, and saturation velocity vsat ∼ 1.88∗106...

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INFONA - science communication portal

Search results for: Deji Akinwande

Graphene Biointerface for Cardiac Arrhythmia Diagnosis and Treatment

Mixed Ionic‐Electronic Charge Transport in Layered Black‐Phosphorus for Low‐Power Memory

Roll‐to‐Roll Dry Transfer of Large‐Scale Graphene

A Library of Atomically Thin 2D Materials Featuring the Conductive‐Point Resistive Switching Phenomenon

Disassembling Silicene from Native Substrate and Transferring onto an Arbitrary Target Substrate

Thinnest Nonvolatile Memory Based on Monolayer h‐BN

75 Years of the Device Research Conference—A History Worth Repeating

Optothermoplasmonic Patterning: Optothermoplasmonic Nanolithography for On‐Demand Patterning of 2D Materials (Adv. Funct. Mater. 41/2018)

Optothermoplasmonic Nanolithography for On‐Demand Patterning of 2D Materials

Recent Progress on Stability and Passivation of Black Phosphorus

Black phosphorus flexible thin film transistors and GHz circuit applications

2D nanoelectronics: From graphene to silicene and beyond

A review on mechanics and mechanical properties of 2D materials—Graphene and beyond

Record fT, fmax, and GHz amplification in 2dimensional CVD MoS2 embedded gate fets

Foreword

Recent development of two-dimensional transition metal dichalcogenides and their applications

Large area fabrication of graphene nanoribbons by wetting transparency-assisted block copolymer lithography

Temperature and Thickness Dependences of the Anisotropic In‐Plane Thermal Conductivity of Black Phosphorus

Laser-directed “bubble-pen” for nanoparticle patterning

State-of-the-art large area CVD MoS₂ based RF electronics

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