Search results for: Debdeep Jena

Items from 1 to 20 out of 125 results

article

Photoelectric Generation Coefficient of B‐Gallium Oxide during Exposure to High‐Energy Ionizing Radiation

Kevin Goodman, Sam McHenry, Jeff Titus, Robert Cooper, more

physica status solidi (a) > 219 > 6 > n/a - n/a

For utilization in environments where radiation causes concern, a material's photogeneration coefficient proves essential for device designers. To extract this parameter for gallium oxide, which exhibits higher breakdown voltage characteristics compared with other commonly used semiconductor materials, making it desirable for high‐power applications, Schottky diodes receive high‐dose‐rate radiation...

article

In Situ Crystalline AlN Passivation for Reduced RF Dispersion in Strained‐Channel AlN/GaN/AlN High‐Electron‐Mobility Transistors

Reet Chaudhuri, Austin Hickman, Jashan Singhal, Joseph Casamento, more

physica status solidi (a) > 219 > 4 > n/a - n/a

The recent demonstration of

\approx 2

W mm⁻¹ output power at 94 GHz in AlN/GaN/AlN high‐electron‐mobility transistors (HEMTs) has established AlN as a promising platform for millimeter‐wave electronics. The current state‐of‐art AlN HEMTs using ex situ‐deposited silicon nitride (SiN) passivation layers suffer from soft gain compression due to trapping of carriers by surface states. Reducing surface...

article

Electric Fields and Surface Fermi Level in Undoped GaN/AlN Two‐Dimensional Hole Gas Heterostructures

Łukasz Janicki, Reet Chaudhuri, Samuel James Bader, Huili Grace Xing, more

physica status solidi (RRL) – Rapid Research Letters > 15 > 4 > n/a - n/a

Undoped GaN/AlN heterostructures with a high‐density 2D hole gas (2DHG) have recently been reported, demonstrating that holes can be generated in GaN without magnesium (Mg) doping. The presence of the high‐density 2DHG in these GaN/AlN heterostructures is expected to result from huge internal polarization fields. Herein, modulation spectroscopy is applied to analyze the built‐in electric fields in...

article

All‐Epitaxial Bulk Acoustic Wave Resonators

Jeffrey Miller, John Wright, Huili Grace Xing, Debdeep Jena

physica status solidi (a) > 217 > 7 > n/a - n/a

There is a growing interest in the exploration of the nitride material family for radically scaled, high frequency, ultrasonic devices by epitaxial growth techniques. Furthermore, the introduction of epitaxial growth techniques to conventional nitride‐based acoustic technology opens the door to exciting new families of structures for phonon confinement. As the need for higher frequency communications...

article

Degradation Mechanisms of GaN‐Based Vertical Devices: A Review

Matteo Meneghini, Elena Fabris, Maria Ruzzarin, Carlo De Santi, more

physica status solidi (a) > 217 > 7 > n/a - n/a

This article reviews most recent results on the reliability of vertical GaN‐based devices, by presenting a few case studies focused on the stability and degradation of high‐voltage GaN‐on‐GaN diodes and of GaN‐based field‐effect transistors (FETs). With regard to diodes, two relevant stress conditions are investigated. The first is operation at high forward current that can induce a degradation of...

article

Molecular Beam Epitaxy Growth of Large‐Area GaN/AlN 2D Hole Gas Heterostructures

Reet Chaudhuri, Samuel James Bader, Zhen Chen, David Muller, more

physica status solidi (b) > 257 > 4 > n/a - n/a

Large‐area growth of polarization‐induced 2D hole gases (2DHGs) in a GaN/AlN heterostructure using molecular beam epitaxy (MBE) is demonstrated. A study of the effect of metal fluxes and substrate temperature during growth is conducted to optimize the 2DHG transport. These conditions are adopted for the growth on 2 in. wafer substrates. The obtained results represent a step forward towards achieving...

article

Oxygen Incorporation in the Molecular Beam Epitaxy Growth of Sc_xGa_1−xN and Sc_xAl_1−xN

Joseph Casamento, Huili Grace Xing, Debdeep Jena

physica status solidi (b) > 257 > 4 > n/a - n/a

Secondary‐ion mass spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium‐containing nitride semiconductor multilayer heterostructures: Sc_xGa_1−xN/GaN and Sc_xAl_1−xN/AlN grown by molecular beam epitaxy (MBE). In the Sc_xGa_1−xN/GaN heterostructure grown in metal‐rich conditions on GaN–SiC template substrates with Sc contents up to 28 at%, the oxygen concentration...

article

Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications

D. Scott Katzer, Neeraj Nepal, Matthew T. Hardy, Brian P. Downey, more

physica status solidi (a) > 217 > 3 > n/a - n/a

Epitaxial integration of superconductors with semiconductors is expected to enable new device architectures and to increase electronic circuit and system functionality and performance in diverse fields, including sensing and quantum computing. Herein, radiofrequency plasma molecular‐beam epitaxy is used to epitaxially grow 3–200 nm‐thick metallic NbN_x and TaN_x thin films on hexagonal SiC substrates...

article

Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications

D. Scott Katzer, Neeraj Nepal, Matthew T. Hardy, Brian P. Downey, more

physica status solidi (a) > 217 > 3 > n/a - n/a

Superconductors Integration of superconductors with semiconductors is required for high‐performance electron devices in new quantum, sensing, and systems applications. In article number 1900675, D. Scott Katzer and co‐workers report the fully epitaxial integration of III‐N and GaN HEMT structures on superconducting transition metal nitrides. Image created by Robert Kurcoba using an atomic image provided...

article

75 Years of the Device Research Conference—A History Worth Repeating

Aaron D. Franklin, Debdeep Jena, Deji Akinwande

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 116 - 120

At a time when the scientific community is overrun with conferences, workshops, and congresses to discuss all facets of innovation, much can be learned from considering a meeting that has withstood the test of time: the Device Research Conference (DRC). The DRC has been the launching pad for many game-changing innovations, from early transistors to new electronic materials. While the conference has...

article

MBE growth of few-layer 2H-MoTe2 on 3D substrates

Suresh Vishwanath, Aditya Sundar, Xinyu Liu, Angelica Azcatl, more

Journal of Crystal Growth > 2018 > 482 > C > 61-69

MoTe₂ is the least explored material in the Molybdenum-chalcogen family. Molecular beam epitaxy (MBE) provides a unique opportunity to tackle the small electronegativity difference between Mo and Te while growing layer by layer away from thermodynamic equilibrium. We find that for a few-layer MoTe₂ grown at a moderate rate of ∼6 min per monolayer, a narrow window in temperature (above Te cell temperature)...

chapter

246 nm AlN-delta-GaN quantum well ultraviolet light-emitting diode

Cheng Liu, Yu Kee Ooi, S M Islam, Huili Grace Xing, more

2017 Conference on Lasers and Electro-Optics (CLEO) > 1 - 2

2017 Conference on Lasers and Electro-Optics (CLEO)

The 246 nm AlN-delta-GaN quantum well ultraviolet light-emitting diode was proposed and realized experimentally, with the dominant transverse electric-polarized emission been verified by both the k·p simulation and the room-temperature polarization-dependent electroluminescence measurements.

chapter

Two-pulse photoluminescence correlation technique for studying ultrafast carrier dynamics in deep-UV few monolayer thick nitride quantum wells

Okan Koksal, S M Moududul Islam, Tongbo Wei, Grace Huili Xing, more

2017 Conference on Lasers and Electro-Optics (CLEO) > 1

2017 Conference on Lasers and Electro-Optics (CLEO)

We a present a new two-pulse photoluminescence correlation technique and use it to study ultrafast dynamics of photoexcited carriers in few monolayer thick deep-UV GaN/AlN quantum wells with picosecond time resolution. Our results show that our technique can be used to study carrier dynamics in nanostructures using photoluminescence in a very simple way.

chapter

Tunnel-junction p-contact sub-250 nm deep-UV LEDs

Shyam Bharadwaj, Kevin Lee, S M Islam, Vladimir Protasenko, more

2017 Conference on Lasers and Electro-Optics (CLEO) > 1 - 2

2017 Conference on Lasers and Electro-Optics (CLEO)

We demonstrate a 243 nm deep-ultraviolet (deep-UV) GaN/AlN heterostructure light-emitting diode with and without a tunnel-junction p-contact. Optical emission occurs from 2 monolayer thick GaN quantum structure active regions. Use of a tunnel-junction enhances the current density under forward bias.

article

1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy

Zongyang Hu, Kazuki Nomoto, Meng Qi, Wenshen Li, more

IEEE Electron Device Letters > 2017 > 38 > 8 > 1071 - 1074

High-voltage vertical regrown p-n junction diodes on bulk GaN substrates are reported in this letter with molecular-beam-epitaxy regrown p-GaN on metalorganic-chemical-vapor-deposition grown n-GaN drift region. The highest breakdown voltage is measured at 1135 V, and the differential on-resistance is 3.9 mOhm.cm² at room temperature. The forward I–V show a turn-ON voltage near 3.9 V and an ideality...

chapter

High-temperature p-type polarization doped AlGaN cladding for sub-250 nm deep-UV quantum well LEDs by MBE

Shyam Bharadwaj, S M Islam, Kevin Lee, Andrew Devine, more

2017 75th Annual Device Research Conference (DRC) > 1 - 2

2017 75th Device Research Conference (DRC)

Deep UV (DUV) light-emitting diodes (LEDs) are finding increased application in many areas including water purification and sterilization. Sub-270 nm emission is ideal for these applications since bacterial DNA absorbs strongly in this wavelength regime. To extract high energy photons (∼5 eV), the LED cladding regions must be transparent and therefore consist of high Aluminum content (>60%) n-...

chapter

Wide-bandgap Gallium Nitride p-channel MISFETs with enhanced performance at high temperature

Kazuki Nomoto, Samuel James Bader, Kevin Lee, Shyam Bharadwaj, more

2017 75th Annual Device Research Conference (DRC) > 1 - 2

2017 75th Device Research Conference (DRC)

Wide-bandgap materials, particularly Gallium Nitride, have emerged as the platform underlying many of the most promising technologies in the high-power and high-frequency domain. However, GaN p-channel devices lag far behind their popular n-channel counterparts, due to lower mobilities as well as difficulties in doping and forming ohmic contacts. There is a strong need for wide-bandgap p-channel FETs...

chapter

Vertical fin Ga₂O₃ power field-effect transistors with on/off ratio >10⁹

Zongyang Hu, Kazuki Nomoto, Wenshen Li, Liheng Jerry Zhang, more

2017 75th Annual Device Research Conference (DRC) > 1 - 2

2017 75th Device Research Conference (DRC)

Recently, Ga₂O₃ has become an attractive material for both power electronic and optoelectronic device applications since large-size electronic-grade Ga₂O₃ substrates can be readily produced by melt-grown methods. Furthermore, high quality epitaxy and n-type doping schemes have been demonstrated [1, 2]. Due to its ultra-wide band gap (∼4.5–4.9 eV), Ga₂O₃ is estimated to have a critical breakdown field...

chapter

S-shaped negative differential resistance in III-Nitride blue quantum-well laser diodes grown by plasma-assisted MBE

Henryk Turski, Rusen Yan, Samuel J Bader, Grzegorz Muziol, more

2017 75th Annual Device Research Conference (DRC) > 1 - 2

2017 75th Device Research Conference (DRC)

Group III-Nitride semiconductor quantum heterostructures have revolutionized efficient visible light emitters [1]. Even though efficient nitride light emitting diodes (LEDs) and laser diodes (LDs) are now commercially mature, there as several physical effects in them that are poorly understood. Furthermore, light emitters in the UV [2] and green and longer wavelengths [3, 4] remain challenging. The...

chapter

Experimental demonstration of enhanced terahertz coupling to plasmon in ultra-thin membrane AlGaN/GaN HEMT arrays

Hugo O. Condori Quispe, Ashish Chanana, Jimy Encomendero, Mingda Zhu, more

2017 75th Annual Device Research Conference (DRC) > 1 - 2

2017 75th Device Research Conference (DRC)

THz technology offers multiple applications in areas such as remote sensing, spectroscopy, biomedical imaging, and ultra-wide bandwidth communications [1]. However, obtaining high-frequency performance at THz frequencies has proven challenging in conventional electronic devices. This difficulty motivated the exploration of unconventional transport mechanisms such as electron plasma waves. Two dimensional...

Publication date

Last 3 years (2)

Close

Date range setting

Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.

From:

To:
Set your own date range

Publication type

book (70)
article (55)

Keywords

GALLIUM NITRIDE (35)
LOGIC GATES (32)
GAN (16)
HEMTS (16)
TUNNELING (16)
DOPING (15)
SUBSTRATES (14)
ALUMINUM GALLIUM NITRIDE (12)
MODFETS (12)
GRAPHENE (10)
TRANSISTOR (8)
ALN (7)
CRYSTALS (7)
INALN (7)
SCHOTTKY DIODES (7)
HEMT (6)
SILICON (6)
WIDE BAND GAP SEMICONDUCTORS (6)
CAPACITANCE (5)
FIELD EFFECT TRANSISTORS (5)
LEAKAGE CURRENTS (5)
MOLECULAR BEAM EPITAXIAL GROWTH (5)
PHOTONIC BAND GAP (5)
TEMPERATURE MEASUREMENT (5)
TRANSISTORS (5)
CONTACT RESISTANCE (4)
CURRENT MEASUREMENT (4)
GALLIUM COMPOUNDS (4)
HETEROJUNCTIONS (4)
LIGHT EMITTING DIODES (4)
METALS (4)
MOLECULAR BEAM EPITAXY (MBE) (4)
P-N JUNCTIONS (4)
SCHOTTKY BARRIERS (4)
SILICON CARBIDE (4)
A3. MOLECULAR BEAM EPITAXY (3)
ALUMINIUM COMPOUNDS (3)
ALUMINUM NITRIDE (3)
ALUMINUM OXIDE (3)
ARTIFICIAL INTELLIGENCE (3)
CONDUCTIVITY (3)
CUTOFF FREQUENCY (3)
ELECTRIC BREAKDOWN (3)
ELECTROSTATICS (3)
HFET (3)
HIGH ELECTRON MOBILITY TRANSISTORS (3)
HIGH-ELECTRON MOBILITY TRANSISTOR (HEMT) (3)
III-V SEMICONDUCTOR MATERIALS (3)
INDIUM COMPOUNDS (3)
MBE (3)
MODULATION (3)
MOLECULAR BEAM EPITAXY (3)
MOSFET (3)
NITRIDES (3)
OHMIC CONTACTS (3)
OPTICAL IMAGING (3)
OSCILLATORS (3)
PHONONS (3)
POLARIZATION (3)
REGROWTH (3)
SEMICONDUCTOR DIODES (3)
SWITCHES (3)
A1. ALN (2)
A1. X-RAY DIFFRACTION (2)
AL₂O₃ (2)
ANODES (2)
BREAKDOWN VOLTAGE (2)
CHARGE CARRIER PROCESSES (2)
COMPOUNDS (2)
COMPUTERS (2)
COUPLINGS (2)
CURRENT DENSITY (2)
DETECTORS (2)
EFFECTIVE MASS (2)
ELECTROLUMINESCENCE (2)
ELECTRON VELOCITY (2)
FETS (2)
FINFETS (2)
GALLIUM ARSENIDE (2)
GEOMETRY (2)
GOLD (2)
HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT) (2)
III-V SEMICONDUCTORS (2)
INALN-ALN-GAN (2)
INN (2)
IONS (2)
JUNCTIONS (2)
LATTICES (2)
LEAKAGE CURRENT (2)
METAMATERIALS (2)
MISFETS (2)
MOCVD (2)
MOS2 (2)
NONHOMOGENEOUS MEDIA (2)
OPTICAL SCATTERING (2)
OPTICAL SWITCHES (2)
PHOTOLUMINESCENCE (2)
PHOTOTRANSISTORS (2)
PLASMA TEMPERATURE (2)
PLASMONS (2)
more

Data set

ieee (94)
Wiley (18)
Elsevier (6)
Springer (4)
ACS (3)

INFONA - science communication portal

Search results for: Debdeep Jena

Photoelectric Generation Coefficient of B‐Gallium Oxide during Exposure to High‐Energy Ionizing Radiation

In Situ Crystalline AlN Passivation for Reduced RF Dispersion in Strained‐Channel AlN/GaN/AlN High‐Electron‐Mobility Transistors

Electric Fields and Surface Fermi Level in Undoped GaN/AlN Two‐Dimensional Hole Gas Heterostructures

All‐Epitaxial Bulk Acoustic Wave Resonators

Degradation Mechanisms of GaN‐Based Vertical Devices: A Review

Molecular Beam Epitaxy Growth of Large‐Area GaN/AlN 2D Hole Gas Heterostructures

Oxygen Incorporation in the Molecular Beam Epitaxy Growth of Sc_xGa_1−xN and Sc_xAl_1−xN

Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications

Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications

75 Years of the Device Research Conference—A History Worth Repeating

MBE growth of few-layer 2H-MoTe2 on 3D substrates

246 nm AlN-delta-GaN quantum well ultraviolet light-emitting diode

Two-pulse photoluminescence correlation technique for studying ultrafast carrier dynamics in deep-UV few monolayer thick nitride quantum wells

Tunnel-junction p-contact sub-250 nm deep-UV LEDs

1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy

High-temperature p-type polarization doped AlGaN cladding for sub-250 nm deep-UV quantum well LEDs by MBE

Wide-bandgap Gallium Nitride p-channel MISFETs with enhanced performance at high temperature

Vertical fin Ga₂O₃ power field-effect transistors with on/off ratio >10⁹

S-shaped negative differential resistance in III-Nitride blue quantum-well laser diodes grown by plasma-assisted MBE

Experimental demonstration of enhanced terahertz coupling to plasmon in ultra-thin membrane AlGaN/GaN HEMT arrays

Filter options

Publication date

Publication type

Keywords

Data set

Journal

INFONA - science communication portal

Search results for: Debdeep Jena

Add recipient

Sending message cancelled

Are you sure you want to cancel sending this message?

Send message

Filter options

Publication date

Date range setting

Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.

Publication type

Keywords

Data set

Journal

Reporting an error / abuse

Sending the report failed

Accessibility options