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Graphene Nanoribbons (GNR) are been being investigated as they possess a bandgap in contrast to graphene sheets which have zero bandgap [1, 2]. Therefore, GNR might be more suitable as a channel material in field-effect transistors (FETs) which requires a high on/off ratio. The other electrical properties of GNR FETs apart from on/off ratio, however, are not as good as those of corresponding graphene...
We report graphene field-effect transistors on hexagonal boron nitride, high-k, and polymeric films featuring state-of-the-art electrical and mechanical properties on flexible substrates. The record electrical performance includes the highest ON current (∼0.3mA/μm), the first demonstration of current saturation on flexible films and intrinsic gain, and the highest conversion gain flexible graphene...
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