Search results for: Aaron D. Franklin

Items from 1 to 20 out of 35 results

article

Aerosol Jet Printing Conductive 3D Microstructures from Graphene Without Post‐Processing

Brittany N. Smith, Peter Ballentine, James L. Doherty, Ryan Wence, more

Small > 20 > 12 > n/a - n/a

Three‐dimensional (3D) graphene microstructures have the potential to boost performance in high‐capacity batteries and ultrasensitive sensors. Numerous techniques have been developed to create such structures; however, the methods typically rely on structural supports, and/or lengthy post‐print processing, increasing cost and complexity. Additive manufacturing techniques, such as printing, show promise...

article

Distinct Contact Scaling Effects in MoS₂ Transistors Revealed with Asymmetrical Contact Measurements

Zhihui Cheng, Jonathan Backman, Huairuo Zhang, Hattan Abuzaid, more

Advanced Materials > 35 > 21 > n/a - n/a

2D semiconducting materials have immense potential for future electronics due to their atomically thin nature, which enables better scalability. While the channel scalability of 2D materials has been extensively studied, the current understanding of contact scaling in 2D devices is inconsistent and oversimplified. Here physically scaled contacts and asymmetrical contact measurements (ACMs) are combined...

article

Electrically Tunable Surface Acoustic Wave Propagation at MHz Frequencies Based on Carbon Nanotube Thin‐Film Transistors

Chen Shen, Shiheng Lu, Zhenhua Tian, Shujie Yang, more

Advanced Functional Materials > 31 > 18 > n/a - n/a

Surface acoustic waves (SAWs) that propagate on the surface of a solid at MHz frequencies are widely used in sensing, communication, and acoustic tweezers. However, their properties are difficult to be tuned electrically, and current devices suffer from complicated configurations, complicated tuning mechanisms, or small ranges of tunability. Here a structure featuring a thin‐film transistor configuration...

article

Impact of Morphology on Printed Contact Performance in Carbon Nanotube Thin‐Film Transistors

Jorge A. Cardenas, Sophia Upshaw, Nicholas X. Williams, Matthew J. Catenacci, more

Advanced Functional Materials > 29 > 1 > n/a - n/a

Silver nanoparticles (NPs) are the most widely used conductive material throughout the printed electronics space due to their high conductivity and low cost. However, when interfacing with other prominent printed materials, such as semiconducting carbon nanotubes (CNTs) in thin‐film transistors (TFTs), silver is suboptimal when compared to more expensive or less conductive materials. Consequently,...

article

75 Years of the Device Research Conference—A History Worth Repeating

Aaron D. Franklin, Debdeep Jena, Deji Akinwande

IEEE Journal of the Electron Devices Society > 2018 > 6 > 1 > 116 - 120

At a time when the scientific community is overrun with conferences, workshops, and congresses to discuss all facets of innovation, much can be learned from considering a meeting that has withstood the test of time: the Device Research Conference (DRC). The DRC has been the launching pad for many game-changing innovations, from early transistors to new electronic materials. While the conference has...

article

Cross‐Plane Carrier Transport in Van der Waals Layered Materials

Sina Najmaei, Mahesh R. Neupane, Barbara M. Nichols, Robert A. Burke, more

Small > 14 > 20 > n/a - n/a

The mechanisms of carrier transport in the cross‐plane crystal orientation of transition metal dichalcogenides are examined. The study of in‐plane electronic properties of these van der Waals compounds has been the main research focus in recent years. However, the distinctive physical anisotropies, short‐channel physics, and tunability of cross layer interactions can make the study of their electronic...

chapter

Fully printed and flexible carbon nanotube transistors designed for environmental pressure sensing and aimed at smart tire applications

Joseph B. Andrews, Jorge A. Cardenas, Jacob Mullett, Aaron D. Franklin

2017 IEEE SENSORS > 1 - 3

2017 IEEE SENSORS

As the sensor infrastructure needed to facilitate the internet-of-things (IoT) rapidly expands, printed electronics have been identified as a key approach for providing low-cost, ubiquitous sensor networks. In this work, we demonstrate the use of a fully printed carbon nanotube thin-film transistor (CNT-TFT) for sensing environmental pressure over a large pressure range. The transconductance of the...

article

Noninvasive Material Thickness Detection by Aerosol Jet Printed Sensors Enhanced Through Metallic Carbon Nanotube Ink

Joseph B. Andrews, Changyong Cao, Martin A. Brooke, Aaron D. Franklin

IEEE Sensors Journal > 2017 > 17 > 14 > 4612 - 4618

Demand for cheaper and more functional sensors continues to rise in an era when data can be used to improve health, safety, and efficiency in daily lives. In this paper, we present a fully printed sensor capable of noninvasive material thickness detection. By applying an oscillating signal between two millimeter-scale electrodes, the fringing electric field is measurably perturbed by a material placed...

chapter

Integration of 3.4 nm HfO₂ into the gate stack of MOS₂ and WSe₂ top-gate field-effect transistors

Katherine M. Price, Aaron D. Franklin

2017 75th Annual Device Research Conference (DRC) > 1 - 2

2017 75th Device Research Conference (DRC)

One of the main challenges inhibiting the integration of 2D crystals into top-gate field-effect transistors (FETs) is deposition of a uniform, scalable, high-quality dielectric. The most common and controlled method of deposition of thin dielectric films is atomic layer deposition (ALD); however, the inert surface of 2D materials offers no nucleation sites for the ALD precursors, resulting in non-uniform...

chapter

MoS₂ negative capacitance FETs with CMOS-compatible hafnium zirconium oxide

Felicia A. McGuire, Yuh-Chen Lin, Bruce Rayner, Aaron D. Franklin

2017 75th Annual Device Research Conference (DRC) > 1 - 2

2017 75th Device Research Conference (DRC)

The attractiveness of negative capacitance field-effect transistors (NC-FETs) stems from their ability to enable a subthreshold swing (SS) below the 60 mV/decade thermal limit at room temperature — a direct effect of the step-up voltage amplifier behavior of the ferroelectric [1]. This effect has been shown to yield sub-60 mV/dec SS in several Si-based NC-FETs [2-4]; however, as Si-based devices become...

chapter

Edge contacts to multilayer MoS₂ using in situ Ar ion beam

Zhihui Cheng, Katherine Price, Aaron D. Franklin

2017 75th Annual Device Research Conference (DRC) > 1 - 2

2017 75th Device Research Conference (DRC)

The dimensional scaling of transistors has been a continuous effort for decades. For devices at the sub-5 nm scale, two-dimensional transition metal dichalcogenides, including MoS₂, show great promise for preserving electrostatic control and performance. Numerous studies have theoretically [1] and experimentally [2] investigated the effect of short channel and contact lengths on the MoS₂ transistor...

chapter

Fully printed memristors from Cu-SiO₂ core-shell nanowire composites

Matthew J. Catenacci, Patrick F. Flowers, Changyong Cao, Joseph B. Andrews, more

2017 75th Annual Device Research Conference (DRC) > 1 - 2

2017 75th Device Research Conference (DRC)

An area of printed electronics in which additional development is necessary is printable non-volatile memory, which will be essential for the development of fully printed RFID tags and sensors with integrated data storage.[1] An approach to making a printable memory is to utilize materials that exhibit resistive switching; devices based on this mechanism are often referred to as memristors.[2] However,...

chapter

Scaling, stacking, and printing: How 1D and 2D nanomaterials still hold promise for a new era of electronics

Aaron D. Franklin

2017 Symposium on VLSI Technology > T44 - T45

2017 Symposium on VLSI Technology

1D and 2D nanomaterials continue to show promise for use in electronic devices. Their atomically thin size and superb transport properties make them of great value for transistors scaled in size and, more importantly, in voltage. Meanwhile, their substrate independence and van der Waals nature allows for ready stacking of nanomaterials at the device (interdigitated channels) or chip (monolithic 3D...

article

Fully Printed Memristors from Cu–SiO₂ Core–Shell Nanowire Composites

Matthew J. Catenacci, Patrick F. Flowers, Changyong Cao, Joseph B. Andrews, more

Journal of Electronic Materials > 2017 > 46 > 7 > 4596-4603

This article describes a fully printed memory in which a composite of Cu–SiO₂ nanowires dispersed in ethylcellulose acts as a resistive switch between printed Cu and Au electrodes. A 16-cell crossbar array of these memristors was printed with an aerosol jet. The memristors exhibited moderate operating voltages (∼3 V), no degradation over 10⁴ switching cycles, write speeds of 3 μs, and extrapolated...

article

Modifying the Ni-MoS₂ Contact Interface Using a Broad-Beam Ion Source

Zhihui Cheng, Jorge A. Cardenas, Felicia McGuire, Sina Najmaei, more

IEEE Electron Device Letters > 2016 > 37 > 9 > 1234 - 1237

Charge transport at the contacts is a dominant factor in determining the performance of devices using 2D MoS₂. Using a low-energy beam of Ar ions, the interface between Ni and MoS₂ was modified to improve the performance in 2D field-effect transistors (FETs). This broad-beam ion source is integrated into an ultrahigh vacuum, physical vapor deposition system that allowed for in situ modification of...

chapter

Using Ar Ion beam exposure to improve contact resistance in MoS₂ FETs

Zhihui Cheng, Jorge A. Cardenas, Felicia McGuire, Aaron D. Franklin

2016 74th Annual Device Research Conference (DRC) > 1 - 2

2016 74th Annual Device Research Conference (DRC)

Contact resistance is a dominant factor in the performance of field-effect transistors (FETs) from two-dimensional MoS₂. Several techniques have been shown to improve carrier transport at the metal-MoS₂ interface, thus lowering the contact resistance. These approaches include the use of molecular doping [1], different contact materials [2-5], phase transformation of MoS₂ [6], and adding an interfacial...

article

A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime—Part II: Extrinsic Elements, Performance Assessment, and Design Optimization

Chi-Shuen Lee, Eric Pop, Aaron D. Franklin, Wilfried Haensch, more

IEEE Transactions on Electron Devices > 2015 > 62 > 9 > 3070 - 3078

We present a data-calibrated compact model of carbon nanotube (CNT) FETs (CNFETs), including contact resistance, direct source-to-drain, and band-to-band tunneling currents. The model captures the effects of dimensional scaling and performance degradations due to parasitic effects, and is used to study the tradeoffs between the drive current and the leakage current of CNFETs according to the selection...

chapter

Carbon Nanotube Electronics

Aaron D. Franklin

Emerging Nanoelectronic Devices > Nanoelectronic Logic and Information Processing > 315 - 335

Among the options for a field‐effect transistor (FET) channel that can outperform silicon at low voltages, the single‐walled carbon nanotube (CNT) is a strong contender. Composed of a single atomic layer of hexagonally arranged carbon atoms that form a cylinder of ∼1 nm diameter, the CNT is able to transport electrons with zero resistance (ballistic transport) while also having an intrinsic semiconducting...

chapter

Defining and overcoming the contact resistance challenge in scaled carbon nanotube transistors

Aaron D. Franklin, Wilfried Haensch

72nd Device Research Conference > 191 - 192

2014 72nd Annual Device Research Conference (DRC)

Single-walled carbon nanotubes (CNTs) offer attractive performance benefits as the channel material for aggressively scaled digital transistors that operate at low voltages. Progress continues to be made resolving the materials challenges of CNT purification and placement [1]. Meanwhile, a better understanding of the origin and role of contact resistance in scaled CNT field-effect transistors (CNTFETs)...

article

Compact Model for Carbon Nanotube Field-Effect Transistors Including Nonidealities and Calibrated With Experimental Data Down to 9-nm Gate Length

Jieying Luo, Lan Wei, Chi-Shuen Lee, Aaron D. Franklin, more

IEEE Transactions on Electron Devices > 2013 > 60 > 6 > 1834 - 1843

A semianalytical carbon nanotube field-effect transistor (CNFET) model based on the virtual-source model is presented, which includes series resistance, parasitic capacitance, and direct source-to-drain tunneling leakage. The model is calibrated with recent experimental data down to 9-nm gate length. Device performance of 22- to 7-nm technology nodes is analyzed. The results suggest that contact resistance...

Publication date

Last year (1)
Last 3 years (2)

Close

Date range setting

Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.

From:

To:
Set your own date range

Publication type

article (21)
book (14)

Keywords

CONTACT RESISTANCE (7)
FIELD EFFECT TRANSISTORS (7)
CARBON NANOTUBES (5)
LOGIC GATES (5)
CARBON NANOTUBE (CNT) (4)
GRAPHENE (4)
METALS (4)
PERFORMANCE EVALUATION (4)
RESISTANCE (4)
SUBSTRATES (4)
TRANSISTORS (4)
AEROSOL JET PRINTING (3)
CNTFETS (3)
FIELD-EFFECT TRANSISTOR (FET) (3)
ION BEAMS (3)
MOLYBDENUM (3)
SULFUR (3)
TWO DIMENSIONAL DISPLAYS (3)
2D (2)
BALLISTIC TRANSPORT (2)
CARBON NANOTUBE (2)
CNTFET (2)
CONTACT SCALING (2)
DIELECTRICS (2)
FIELD-EFFECT TRANSISTOR (2)
GEOMETRY (2)
INK (2)
ION SOURCES (2)
LENGTH SCALING (2)
MEMRISTORS (2)
NANOSCALE DEVICES (2)
NICKEL (2)
SWITCHES (2)
TRANSCONDUCTANCE (2)
TRANSISTOR (2)
TUNNELING (2)
1D (1)
3D GRAPHENE (1)
3D PRINTING (1)
ADDITIVE MANUFACTURING (1)
AGGRESSIVE SCALING (1)
ALIGNED NANOTUBE (1)
ALUMINUM OXIDE (1)
ANALYTICAL MODELS (1)
ATOMIC FORCE MICROSCOPY (1)
CAPACITANCE (1)
CAPACITANCE MEASUREMENT (1)
CAPACITIVE SENSORS (1)
CAPACITORS (1)
CARBON NANOTUBE ARRAY FIELD-EFFECT TRANSISTOR (1)
CARBON NANOTUBE FIELD EFFECT TRANSISTOR (CNFET) (1)
CARBON NANOTUBE TRANSISTORS (1)
CARBON-NANOTUBE FET (CNFET) (1)
CARRIER INJECTION (1)
CNT (1)
COMPACT MODEL (1)
CONFERENCES (1)
CONTACT (1)
CONTACT GEOMETRY (1)
CONTACT LENGTH SCALING (1)
COPPER (1)
COPPER NANOWIRES (1)
CROSS‐PLANE ELECTRON TRANSPORT (1)
CRYSTALS (1)
CURRENT CROWDING (1)
CURRENT DENSITY (1)
CURRENT SCALING (1)
DEVICE GEOMETRY (1)
DIRECT SOURCE-TO-DRAIN TUNNELING (1)
DOPING (1)
DOUBLE CONTACTS (1)
DOUBLE GATE (1)
DRY ETCHING (1)
ELECTRODES (1)
ELECTRON DEVICE RESEARCH (1)
EPITAXY (1)
ETCHING (1)
FETS (1)
GATE‐ALL‐AROUND (1)
HAFNIUM COMPOUNDS (1)
HEMT (1)
HEMTS (1)
HIGH-PERFORMANCE FET (1)
HISTORY (1)
HUMIDITY SENSORS (1)
HYSTERESIS (1)
IMAGE EDGE DETECTION (1)
INTERNET OF THINGS (1)
INTERNET-OF-THINGS (IOT) (1)
ION BEAM (1)
LATTICES (1)
LAYERED MATERIALS (1)
LBG-CNTFET (1)
LOCAL BOTTOM GATING (1)
LOCAL GATE (1)
LOCAL-BOTTOM-GATE CONFIGURATION (1)
LOW-DIMENSIONAL (1)
LOW‐VOLTAGE SWITCH (1)
MATERIAL THICKNESS DETECTION (1)
MATHEMATICAL MODEL (1)
more

Data set

ieee (22)
Wiley (6)
ACS (5)
Elsevier (1)
Springer (1)

Journal

IEEE Electron Device Letters (5)
Advanced Functional Materials (2)
IEEE Transactions on Electron Devices (2)
Nano Letters (2)
Small (2)
The Journal of Physical Chemistry C (2)
ACS Nano (1)
Advanced Materials (1)
Carbon (1)
IEEE Journal of the Electron Devices Society (1)
IEEE Sensors Journal (1)
Journal of Electronic Materials (1)
more

INFONA - science communication portal

Search results for: Aaron D. Franklin

Aerosol Jet Printing Conductive 3D Microstructures from Graphene Without Post‐Processing

Distinct Contact Scaling Effects in MoS₂ Transistors Revealed with Asymmetrical Contact Measurements

Electrically Tunable Surface Acoustic Wave Propagation at MHz Frequencies Based on Carbon Nanotube Thin‐Film Transistors

Impact of Morphology on Printed Contact Performance in Carbon Nanotube Thin‐Film Transistors

75 Years of the Device Research Conference—A History Worth Repeating

Cross‐Plane Carrier Transport in Van der Waals Layered Materials

Fully printed and flexible carbon nanotube transistors designed for environmental pressure sensing and aimed at smart tire applications

Noninvasive Material Thickness Detection by Aerosol Jet Printed Sensors Enhanced Through Metallic Carbon Nanotube Ink

Integration of 3.4 nm HfO₂ into the gate stack of MOS₂ and WSe₂ top-gate field-effect transistors

MoS₂ negative capacitance FETs with CMOS-compatible hafnium zirconium oxide

Edge contacts to multilayer MoS₂ using in situ Ar ion beam

Fully printed memristors from Cu-SiO₂ core-shell nanowire composites

Scaling, stacking, and printing: How 1D and 2D nanomaterials still hold promise for a new era of electronics

Fully Printed Memristors from Cu–SiO₂ Core–Shell Nanowire Composites

Modifying the Ni-MoS₂ Contact Interface Using a Broad-Beam Ion Source

Using Ar Ion beam exposure to improve contact resistance in MoS₂ FETs

A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime—Part II: Extrinsic Elements, Performance Assessment, and Design Optimization

Carbon Nanotube Electronics

Defining and overcoming the contact resistance challenge in scaled carbon nanotube transistors

Compact Model for Carbon Nanotube Field-Effect Transistors Including Nonidealities and Calibrated With Experimental Data Down to 9-nm Gate Length

Filter options

Publication date

Publication type

Keywords

Data set

Journal

INFONA - science communication portal

Search results for: Aaron D. Franklin

Add recipient

Sending message cancelled

Are you sure you want to cancel sending this message?

Send message

Filter options

Publication date

Date range setting

Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.

Publication type

Keywords

Data set

Journal

Reporting an error / abuse

Sending the report failed

Accessibility options