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Deep level transient spectroscopy (DLTS) was applied to heterojunction diodes consisting of In-Sn-Zn-O (ITZO)/p-Si to investigate the defect states in In-based amorphous oxide semiconductor thin films. The defect states located at 0.26 and 0.67 eV below the conduction band minimum (CBM) were observed in the ITZO. After thermal annealing at 250 °C, two defect states at 0.22 and 0.28 eV were identified...
A comparative study on light-induced negative-bias stress stabilities in amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) was performed by means of photoinduced transient spectroscopy (PITS). When the a-IGZO thin films were deposited with 4% O2 partial pressure (P/P), a dominant peak with a maximum of around 100 K was clearly observed from the sample. There was a flow rate of SiH4/N2O of...
Total photoyield spectroscopy (TPYS) was applied to investigate the evolution of hydrogen-related defect states in amorphous In-Ga-Zn-O (a-IGZO) thin films. It was found that the defect states located at around 4.3 eV from the vacuum level were formed as a result of hydrogenation. After thermal annealing at 300 °C, the onset of the TPYS spectra shifted to 4.15 eV. As the annealing temperature was...
Effects of etch stop layer (ESL) deposition conditions on stress stabilities in amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) were investigated. The performances of the a-IGZO TFTs were varied depending on the flow rate of SiH4/N2O in chemical vapor deposition (CVD) of ESL. The threshold voltage shift after positive bias thermal stress test was decreased with increasing the flow rate...
Electronic structures in amorphous In-Ga-Zn-O (a-IGZO) thin films were evaluated using metal-oxide-semiconductor (MOS) diodes fabricated with various process conditions. Thin film transistors (TFTs) with the corresponding process conditions were also fabricated to correlate the electronic properties with the TFT performances. It was clearly shown that trap densities of the a-IGZO films increased with...
The physical properties of amorphous In-Ga-Zn-O (a-IGZO) films deposited by DC sputtering with various sputtering pressure were investigated. In accordance with improvement of the transistor performances such as saturation mobility (μSAT) and sub-threshold swing with a lowering the sputter pressure, we found that the sputtering pressure affected various physical properties of a-IGZO film. The lower...
Electronic structures in amorphous In-Ga-Zn-O (a-IGZO) were investigated using metal-oxide-semiconductor (MOS) diodes in terms of dependence on gate insulators (G/I). Thin film transistors (TFTs) with the same gate structure were fabricated to correlate the electronic properties with the TFT performances. From the capacitance-voltage characteristics and transient capacitance response, the space-charge...
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