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Green laser annealing (GLA) by pulsed solid state lasers offers a variety of options to prepare a-Si thin films for TFT (thin film transistors) flat panel display applications. Recent investigations have shown that the green wavelength can be applied at medium energy density in the range of 300–500mJ/cm2 using a 60–150ns laser pulse. The crystallization leads to p-Si material which is comparable to...
We reported on optoelectronic properties of the Cu(InGa)Se2 (CIGS) solar cell fabricated by sputtering method on stainless steel substrate having external efficiency of ∼13.0%. Experimental data indicates that the quantum efficiency (QE) has a high response for long wavelength light. Current density (J) — voltage (V) measurements under illumination resulted in short circuit current density of 32.08...
A 13.3-inch flexible EPD is successfully driven by the developed OTFT backplane. A soluble semiconductor, a peri-xanthenoxanthene derivative (PXX), is applied to the active layer of the OTFTs. The OTFT shows a mobility of 0.5 cm2/Vs and thermal stability at 150°C. The display can be bent with a radius of 5 mm without additional failures because the OTFT backplane is constructed using mechanically...
Long battery life is a critical requirement for mobile devices. Energy harvesting from ambient sources or recycling is a possible means of extending the battery life. Flat panel displays are ideal for this due to their relatively high power consumption, large external surface area and the use of transparent substrates such as glass and eventually plastic. This paper presents design considerations...
Maskless, random RIE texturing with SF6/O2/Cl2 gas mixtures was investigated to achieve higher efficiency for mc-Si solar cells. Triangular pyramid structure with aspect ratio of ∼1 was formed and, when RIE power increased, average weighted reflectance reduced as about 1.46 % per 10 W. It was due to the increased density of surface features. The performances of all RIE-textured mc-S i solar cells...
The dynamic nature of building integrated photovoltaic (BIPV) power conversion applications has given rise to the performance evaluation issues of power capacity and generation. We present an empirical study of four solar panel types including polysilicon double-sided glass light through modules; single side color polysilicon opacity glass modules; amorphous silicon thin-film modules; and stack-type...
We report increase in the minority carrier lifetime τeff by microwave irradiation using commercial microwave oven. N- and p-type crystalline silicon substrates coated with thermally grown SiO2 layers were sandwiched by glass substrates and irradiated by microwave in a microwave oven at 700 W for 120 s. τeff increased from initial values of 1.8×10−3 and 3.4×10−4 s to 2.6×10−3 and 8.4×10−4 s for n-...
The metal-induced lateral crystallization (MILC) of an amorphous Ge (a-Ge) thin film using Cu nanoparticles (NPs) was investigated. Cu-NPs were formed by a cage-shaped protein. After complete elimination of protein shell, crystal growth was performed at 300 °C. Raman spectra and TEM studies revealed that a poly-Ge film was formed at low temperature. The crystallization temperature depends on the metal-NP...
The effects of different working gases on the structural and optical properties of ZnO thin films were investigated under high pressure of 7 Pa deposition using radio frequency (rf) magnetron sputtering. It was found that crystallinities of the ZnO films were increased with the oxygen gas ratio increase; the average of crystallite size was increased as well. The optical emission spectroscopy (OES)...
We have employed XeCl Excimer Laser Annealing (ELA) treatment on ZTO active layer in low temperature solution-processed Zinc Tin Oxide (ZTO) Thin Film Transistors (TFTs) with 300 °C of annealing temperature. The threshold voltage decreased from 18.38 V to 4.78 V because of the increase of carrier concentration by reduction of Cl bonding by employing ELA treatment. The saturation mobility was also...
We investigated a quick patterning using a gel-nanoimprint process for zinc oxide (ZnO) thin films. The X-ray diffraction measurement revealed that the ZnO thin films had wurtzite structure by annealing in the ambient air or oxygen. The ZnO thin film annealed in oxygen exhibited higher refractive index of 1.92 (at 720 nm for wavelength of light) which is close to that of a conventional ZnO thin film,...
In this paper, the characteristics of the transparent ZnO/Al(10 nm)/ZnO multilayered films on glass substrate with different ZnO film thickness (50, 100, 150 and 200 nm) were investigated. The ZnO films were deposited using cathodic arc plasma technique at a low temperature (<75°C). Microstructure, optical and electrical properties were investigated and discussed. The multilayered films showed...
The bottom-gate amorphous InSnZnO (a-ITZO) thin-film-transistors (TFTs) with various channel thicknesses were fabricated to investigate the effect of an active layer thickness on performance and reliability of the TFTs. The a-ITZO TFTs showed the excellent electrical performance such as field effect mobility (21.7–51.7 cm2 v−1 s−1) and subthreshold swing (0.19–0.35 V/decade). It was found that the...
We fabricated highly reliable a-InGaZnO thin film transistors (TFTs) with new silicon nitride (SiNX) gate insulator (GI) fabricated by SiF4/N2 at low temperature (150°C). This new SiNX layer has low hydrogen content which is controlled by the source gases, and hydrogen gas flow rate ratio to SiF4 was changed as 0%, 1%, and 8% to change the hydrogen content in the film. The bias-stress-induced threshold...
We have fabricated Al-doped ZnO thin-film transistors (AZO TFT) on plastic substrate at room temperature. The effect of O2/Ar ratio during channel deposition is investigated on the electrical properties of the Al-doped ZnO thin-film transistors (TFTs) on plastic substrates at room temperature. As the O2/Ar ratio increases, the threshold voltage increases monotonously while the saturation mobility...
The channel length (L) and width (W) scaling behavior of amorphous In-Ga-Zn-O thin-film transistors (TFTs) have been investigated. The fabricated TFTs have a mobility of ∼12 cm2/V-s, sub-threshold slope (S) of ∼110 mV/decade, threshold voltage around 0.3 V and off-current below 10−13 A. Even though the TFTs with smaller channel length (L ≤ 5 μm) show proper switching characteristics, threshold voltage...
We have investigated effects of passivation layer on the electrical stability of Indium-Gallium-Zinc-Oxide thin-film transistors with single passivation layer and double passivation layer fabricated on plastic substrate. The positive bias stress and negative bias stress were applied to the IGZO TFTs at various temperatures from 20 °C to 80 °C. The threshold voltage shift of double passivation device...
We report a 13.5-inch bottom-emission flexible AMOLED using oxide FETs. A transfer technology in which oxide FETs having a structure we call CAAC featuring low off-state current and high reliability are formed on a glass substrate, and then, the FET array is separated from the glass substrate and attached to a plastic substrate was employed, thereby realizing a flexible OS-FET AM-OLED.
To establish new characterization methods for Si-based-thin-film solar cells, we have developed spectroscopic ellipsometry (SE) techniques that can be applied for the analysis of light absorber layers in the solar cells. In particular, our SE analyses allow the detailed characterization of (i) hydrogenated amorphous silicon (a-Si:H) and (ii) microcrystalline silicon ((μc-Si:H) thin films fabricated...
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