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Deep level transient spectroscopy (DLTS) was applied to heterojunction diodes consisting of In-Sn-Zn-O (ITZO)/p-Si to investigate the defect states in In-based amorphous oxide semiconductor thin films. The defect states located at 0.26 and 0.67 eV below the conduction band minimum (CBM) were observed in the ITZO. After thermal annealing at 250 °C, two defect states at 0.22 and 0.28 eV were identified...
Electronic structures in amorphous In-Ga-Zn-O (a-IGZO) thin films were evaluated using metal-oxide-semiconductor (MOS) diodes fabricated with various process conditions. Thin film transistors (TFTs) with the corresponding process conditions were also fabricated to correlate the electronic properties with the TFT performances. It was clearly shown that trap densities of the a-IGZO films increased with...
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