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The recipients of four awards are listed. The awards are: the AM-FPD '12 Best Paper Award; the AM-FPD '12 Poster Award; the AM-FPD '12 Student Paper Award; and the AM-FPD '12-ECS Japan Section Young Researcher Award.
Welcome to AM-FPD '13, the 20th International Workshop on Active-Matrix Flatpanel Displays -TFT Technologies and FPD Materials- (AM-FPD '13) and to the Avanti Kyoto Hall, Ryukoku University, Japan. Sponsored by the Japan Society of Applied Physics and technically sponsored by Electronics and Photonics Division and Japan section in The Electrochemical Society (ECS), The Institute of Electrical and...
Conference proceedings front matter may contain various advertisements, welcome messages, committee or program information, and other miscellaneous conference information. This may in some cases also include the cover art, table of contents, copyright statements, title-page or half title-pages, blank pages, venue maps or other general information relating to the conference that was part of the original...
Electronic displays, especially the liquid crystal displays (LCDs), have made significant progress. I introduce the actual situation how the research and development of the new field was pushed forward through the process of the liquid crystalline study related to my experience. In addition, I discuss about the future trends of the image electronics based on the human being's peculiar characteristics...
The thin film transistor liquid crystal is one of the most successful electronic products in the last two decades. It affects almost everyone's daily life throughout the world. The first report of the amorphous silicon thin film transistor triggered the revolution of the field. In the past 30 years, the thin film transistor technology has progressed dramatically, especially in the large-area, low-temperature,...
Sixty years of research and development on organic semiconductors in Japan is reviewed. The concept of organic semiconductors was given as early as 1954, and early basic studies on organic semiconductors using single crystals of high-purity aromatic hydrocarbons started. Studies of device applications of organic semiconductors, organic electroluminescent devices, organic thin film transistors, and...
Mobile devices such as notebook PCs and smart phones have drastically changed our lives in these two decades. Mobile display has been the key enabler of the revolutionary changes. The role of mobile display is becoming even more important because it is a live interface that connects people with the world of mobile communications and internet based services. While we see further opportunities for future...
TFT active-matrix is a key technology for display manufacturing such as AMLCD and AMOLED display. Past, current and future TFT technologies are reviewed and discussed with the use of amorphous silicon (a-Si), low-temperature poly-Si (LTPS), organic and oxide semiconductors. TFT technologies based on a-Si:H and LTPS are mature enough, but the TFTs with oxide and organic semiconductors are still many...
An overview of the recent status of photovoltaic (PV) power generation is first presented. Next, the Japanese roadmap for the research and development (R&D) of PV power generation and the progress in the development of various solar cells are explained. In addition, the present status and future prospects of Si thin-film solar cells, which are expected to enter the stage of full-scale practical...
In order to develop printing techniques for fabricating flexible devices with both high productivity and high performance, low temperature printing process and materials were investigated. Developed techniques were applied to the preparation of large scale printed devices such as display, sensor and photovoltaic cells.
Threshold voltage shifts of amorphous In-Ga-Zn-Oxide (a-InGaZnO) TFTs on plastic substrates against bias-temperature stress were reduced below 0.03 V, equivalent to those on glass substrates. We have developed 10.2-inch WUXGA (1920×1200) flexible bottom-emission active-matrix organic light-emitting diode (AMOLED) driven by a-InGaZnO TFTs fabricated on a transparent polyimide film. We demonstrated...
We demonstrate a bendable single substrate polymer-stabilized blue phase liquid crystal (PSBP LC) display using bar coater technique. Blue phase temperature range and electro-optical properties of a single glass or a polyethylene terephthalate (PET) substrate PSBP LC cells were investigated. Moreover, the effect of confinement on the conventional PSBP LC cell was reported.
Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) having Ag, Ti, and Mo as source and drain electrodes were characterized. TFTs with Ag electrodes indicated a low and noisy on-state current at a large channel length in a low drain-source voltage. This indicates that the spatial potential barrier exists at the a-IGZO/Ag interface and the resistance of the potential barrier changes...
In this paper we discuss the stability of metal-oxide based thin film transistors (TFT) with a special focus on the impact of the environment. Initially, the influence of adsorbates like water on the TFT characteristics (e.g. threshold voltage and hysteresis) is discussed. It is shown that the adsorption of water and oxygen affect device characteristics and govern the long-term stability. Importantly,...
We fabricated highly reliable amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) with fluorinated silicon nitride (SiNx) as a gate insulator. The SiNx layer was formed with utilizing SiF4/N2 as source gases at a temperature as low as 150°C. We studied the influence of hydrogen and fluorine on the electrical characteristics.
The effect of drain bias on negative gate bias and illumination stress (NBIS) stability of a-IGZO TFTs was investigated. The evolutions of transfer curves were explored with NBIS time using current-voltage characteristics measurements. In the initial stage (<1000 s) of NBIS with grounded VDS, transfer curves shifted negatively without subthreshold swing (S) degradation due to hole-trapping at the...
Electronic structures in amorphous In-Ga-Zn-O (a-IGZO) thin films were evaluated using metal-oxide-semiconductor (MOS) diodes fabricated with various process conditions. Thin film transistors (TFTs) with the corresponding process conditions were also fabricated to correlate the electronic properties with the TFT performances. It was clearly shown that trap densities of the a-IGZO films increased with...
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