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Recently, mobile displays especially for smartphones have been rapidly shifted to provide a higher resolution of 300 pixels/inch (ppi) or more, along with a wider viewing angle, a higher contrast ratio and a slimmer border. From viewpoints of both human eye resolution limitation and current progress of communication infrastructure, displays with resolution of 500 ppi or more should be needed in the...
In order to fabricate a highly reliable InGaZnO-TFT, it is important to form a highly crystalline InGaZnO film with few defects. Evaluation of the crystallinity of InGaZnO is necessary for improving a reliability of InGaZnO-TFT. This paper presents comparison of crystallinities among three kinds of InGaZnO films, which are a CAAC-InGaZnO film having c-axis alignment, a nano-crystalline InGaZnO (nc-InGaZnO)...
2D and 3D distributions of magnetic field (B) are detected by moving a poly-Si micro Hall device. First, we confirm that the Hall voltage (VH) is linearly dependent on B. Next, we move the poly-Si micro Hall device in B and measure VH. The distributions of VH are similar to those of B. Therefore, we can detect the 2D and 3D distributions of B by measuring those of VH. This predicts that we can realize...
The effects of film morphology on ambipolar transport of top-gate-type polymer light-emitting transistors utilizing blended fluorene-type polymers of poly(9,9-dioctylfluorene) (F8) and poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) were investigated. All devices based on ambipolar polymer-blend films with various blend ratios as the active layer exhibited the ambipolar and light-emitting characteristics...
In-Ga-Zn-O thin films formed by a sputtering method, in which distinct crystallinity was not observed by selected area electron diffraction (SAED), were analyzed with nano-beam electron diffraction (NBED). As a result, upon analysis on an about 10-nm-thick area of a sample with the use of a beam with an irradiation area of 1 nmφ, we have found that crystals which are not aligned in a certain direction...
Per-hydro-polysilazane as SiO2 precursor was spin-coated on the polycrystalline silicon substrate and CO2 laser was irradiated to per-hydro-polysilazane for transformation into SiO2. Atomic force microscope analysis showed that the appropriate condition of CO2 laser is possible to form flat SiO2 film on poly-Si surface which has ridges. Fourier transform infrared spectroscopy, x-ray photoelectron...
Artificial retinas have been ardently desired to recover the sight sense for sight-handicapped patients. In our study, we have proposed an artificial retina using poly-Si TFTs. In this presentation, the real-time detection is confirmed. It is found that the response time is less than sub-second, which is sufficiently fast for application of artificial retinas.
It is found by nanobeam electron diffraction that the excimer laser crystallization of In-Ga-Zn-O films which are not c-axis-aligned can lead to formation of polycrystalline In-Ga-Zn-O thin films having spinel structures. The crystal structure of ZnInxGa2−xO4 in which Ga site of ZnGa2O4 is substituted by In was obtained by first-principle calculation. It has been revealed that the unitcell constants...
We fabricated highly reliable amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) with fluorinated silicon nitride (SiNx) as a gate insulator. The SiNx layer was formed with utilizing SiF4/N2 as source gases at a temperature as low as 150°C. We studied the influence of hydrogen and fluorine on the electrical characteristics.
In this paper we discuss the stability of metal-oxide based thin film transistors (TFT) with a special focus on the impact of the environment. Initially, the influence of adsorbates like water on the TFT characteristics (e.g. threshold voltage and hysteresis) is discussed. It is shown that the adsorption of water and oxygen affect device characteristics and govern the long-term stability. Importantly,...
The effect of drain bias on negative gate bias and illumination stress (NBIS) stability of a-IGZO TFTs was investigated. The evolutions of transfer curves were explored with NBIS time using current-voltage characteristics measurements. In the initial stage (<1000 s) of NBIS with grounded VDS, transfer curves shifted negatively without subthreshold swing (S) degradation due to hole-trapping at the...
The thin film transistor liquid crystal is one of the most successful electronic products in the last two decades. It affects almost everyone's daily life throughout the world. The first report of the amorphous silicon thin film transistor triggered the revolution of the field. In the past 30 years, the thin film transistor technology has progressed dramatically, especially in the large-area, low-temperature,...
Electronic displays, especially the liquid crystal displays (LCDs), have made significant progress. I introduce the actual situation how the research and development of the new field was pushed forward through the process of the liquid crystalline study related to my experience. In addition, I discuss about the future trends of the image electronics based on the human being's peculiar characteristics...
In this report, we have studied the performance of a subphthalocyanine (SubPc)/C60 heterojunction photovoltaic device as a function of various anode conditions: pristine indium-tin-oxide (ITO), oxygen plasma treated ITO, and insertion of molybdenum oxide (MoO3) as a buffer layer at the anode interface. The insertion of MoO3 increases considerably the open-circuit voltage by more than two times. Although,...
An anti-soiling layer was coated on the surface of polymethylmethacrylate (PMMA), which is the primary material of Fresnel lenses for concentrator photovoltaics. The layer was prepared by coating the photocatalytic surface layer with modified WO3 and partially hydrolyzed tetraethyl orthosilicate. When sand was discharged onto the PMMA samples, the mass of adherent sand was more than 0.010 g for the...
The deployment of solar photovoltaics has to expand to a scale of tens of peak terawatts in order to become a noticeable source of energy in the future. All the current commercial solar cell technologies suffer from natural resource limitations that prevent them from reaching terawatt scales. These limitations include high energy input for wafer-Si cells and material scarcity for CdTe, CIGS, wafer-Si...
The characteristic deviation of excimer-laser crystallized (ELC) poly-Si thin-film transistors (TFTs) with wide channel is compared between TFTs with channel regions parallel to laser shots (parallel TFTs) and TFTs with channel regions perpendicular to laser shots (perpendicular TFTs). It is found that the characteristic deviation is smaller for perpendicular TFTs. Moreover, layout design of operational...
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