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This paper reports the design and measured results of a multi-octave low noise amplifier (LNA) and a frequency-agile LNA utilizing a 0.25 μm gallium nitride (GaN) integrated circuit process technology for multi-band receiver applications. The demonstrated broadband LNA covers an instantaneous bandwidth from S- to C-bands (2.2-7.0 GHz), and the frequency-agile LNA cumulatively spans across 3 distinct...
This paper presents the development of high-gain, wide-bandwidth, W-band LNA integrated circuits utilizing a novel 0.25 μm InP/Si BiCMOS process with Ft/Fmax of 330/270 GHz. A 4-stage microstrip LNA achieves a minimum NF of 5.7 dB at 92 GHz and remains less than 7.2 dB (6.4 dB avg.) across a 75–100 GHz bandwidth. The LNA also exhibits a peak gain of 27.7 dB, a 3-dB bandwidth of 18 GHz (80–98 GHz),...
The unprecedented interest in high bandwidth applications in the mm-wave range has set off a wave of research exploring techniques that enable wide tuning range voltage-controlled oscillators (VCOs). Low frequency CMOS LC-VCOs ( GHz) have been well studied in the literature and several approaches have been developed to optimize their performance. However, there lie several interesting challenges...
This paper reports on the successful demonstration of radio frequency (RF) components in support of an integrated wide band/high dynamic range X-band receiver in 180-nm fully-depleted (FD) SOI CMOS technology. The demonstrated microwave monolithic integrated circuit (MMIC) includes an X-band low noise amplifier (LNA), Marchand balun, balanced amplifiers, double balanced mixer, non-reflective filter,...
This paper describes a wide band/high dynamic range receiver implemented in a 0.18-μm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. The system demonstration is a single conversion architecture with RF input at X-Band and IF output at S-Band. The receiver yielded 20–21.5 dB conversion gain, 5.6–6 dB noise figure, and 16.7 dBm OIP3 across a 600-MHz instantaneous bandwidth at S-Band operation.
This paper describes the demonstration of a four-channel digital beamforming system incorporating highly integrated silicon germanium downconverter modules. The downconverter modules are designed to translate X-band frequencies (9 to 10.5 GHz) down to a common 1.0 GHz IF output. The modules were integrated with an X-band antenna array and high-speed digitizer system to form a rudimentary digital beamforming...
This work demonstrates the successful implementation of two single-stage low-noise amplifiers (LNAs) using 0.18 mum fully depleted silicon on insulator (FDSOI) CMOS technology. These two amplifiers utilize a metal T-gate n-MOSFET device for improved RF performance. The narrowband LNA has a measured gain of 8.2 dB, a noise figure (NF) of 1.5 dB and input referred third order intercept point (IIP3)...
This paper presents two integrated non-reflective bandpass filters. The filters are implemented in a silicon germanium (SiGe) BiCMOS technology and fully depleted silicon on insulator (FDSOI) CMOS technology. The purpose of these circuits is to explore the feasibility of passive filter applications on silicon substrates while maintaining low insertion loss and 50 Ohm impedance matching. The SiGe-based...
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