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This paper reports the design and measured results of a multi-octave low noise amplifier (LNA) and a frequency-agile LNA utilizing a 0.25 μm gallium nitride (GaN) integrated circuit process technology for multi-band receiver applications. The demonstrated broadband LNA covers an instantaneous bandwidth from S- to C-bands (2.2-7.0 GHz), and the frequency-agile LNA cumulatively spans across 3 distinct...
This paper reports on the successful demonstration of radio frequency (RF) components in support of an integrated wide band/high dynamic range X-band receiver in 180-nm fully-depleted (FD) SOI CMOS technology. The demonstrated microwave monolithic integrated circuit (MMIC) includes an X-band low noise amplifier (LNA), Marchand balun, balanced amplifiers, double balanced mixer, non-reflective filter,...
This paper describes a wide band/high dynamic range receiver implemented in a 0.18-μm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. The system demonstration is a single conversion architecture with RF input at X-Band and IF output at S-Band. The receiver yielded 20–21.5 dB conversion gain, 5.6–6 dB noise figure, and 16.7 dBm OIP3 across a 600-MHz instantaneous bandwidth at S-Band operation.
This paper describes the demonstration of a four-channel digital beamforming system incorporating highly integrated silicon germanium downconverter modules. The downconverter modules are designed to translate X-band frequencies (9 to 10.5 GHz) down to a common 1.0 GHz IF output. The modules were integrated with an X-band antenna array and high-speed digitizer system to form a rudimentary digital beamforming...
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