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The following topics are dealt with: RF active devices; RF MEMS; RF technology; RF modeling and characterization; RF passive devices; MM-wave circuits; RF modules; RF circuit blocks; voltage controlled oscillators and low noise amplifiers
Summary form only given. This paper reviews the latest development in RF MEMS switches and switched-capacitors and their applications in tunable matching networks, filters and antennas specifically for the wireless bands from 800 MHz to 5.8 GHz. RF MEMS technology provide very low loss, high-Q switched-capacitors and varactors, and can be integrated above CMOS or on low cost glass substrate. The glass...
Transmission lines (TLs) have been used as part of resonators, filters, and similar modules for many years. But the electrical length of these TLs is in the range between lambda/8 and lambda mostly. Thus these lines had not been used for monolithic integration on silicon so far because of their exorbitant area usage. This paper demonstrates dramatically area shrinked differential TLs (DTLs) due to...
A highly integrated multi-frequency CDMA transmitter using a simplified architecture based on a single common RF modulator and LO generation is presented. This chip up converts directly the I/Q base band signal to RF in two stages and delivers the RF signal to the power amplifier. The chip provides more than 80dB power control range in both bands and it is designed to deliver +5.5dBm in CDMA mode...
An optimized saddle-add-on metallization process is used on surface passivated high resistivity silicon substrate to implement very high quality (Q) factor inductors. Test inductors with 5 and 10 nH inductance values are realized and measured to have maximum Q values of 37 at 1.5 GHz and 32 at 900 MHz respectively
This paper presents two integrated non-reflective bandpass filters. The filters are implemented in a silicon germanium (SiGe) BiCMOS technology and fully depleted silicon on insulator (FDSOI) CMOS technology. The purpose of these circuits is to explore the feasibility of passive filter applications on silicon substrates while maintaining low insertion loss and 50 Ohm impedance matching. The SiGe-based...
We present a 0.7 to 1.3 GHz RF amplifier with very high third order intercept point (IP3) for use in an integrated receiver. The amplifier is designed in a modern high volume commercial SiGe HBT process and operates with a collector voltage of 1.8 V. An integrated shunt diode linearizer, inductive emitter degeneration, and output impedance matching are all optimized together to achieve an IP3 of +40...
An RF MEMS capacitive membrane switch with interconnects and bonding surfaces for wafer-scale packaging is demonstrated for 50-90 GHz with un-bonded cap wafers
In that paper a detailed comparison between the differential Colpitts oscillator and the well-known cross-coupled oscillator topology is presented. Frequency tuning is realized by using a combination of switchable capacitors and an analog varactor diode. The main focus is to minimize the phase noise, which is a limiting factor in the realization of RF-radios for modern communication systems. Other...
In this paper, a novel circuit topology of low-noise amplifiers suitable for multi-band and multi-standard wireless applications is proposed. By employing a broadband input matching technique and vactors in the inter-stage and output matching networks, a compact LNA with continuous frequency tuning capability is realized. The proposed circuit is implemented in a standard 0.18-mum CMOS technology....
Employing large-signal impedance matching for the transmit node and conjugate matching for the receive node, a 15 GHz CMOS switch with high power handling is designed. With the design techniques, the P-1dB in the transmit mode and the transducer power gain in the receive mode at high frequencies have been significantly improved. The switch exhibits P-1dB of 23.6 dBm and 14.0 dBm, insertion loss of...
Two passive LC filters are fabricated in a 0.18 mum BiCMOS process for interference suppression in WCDMA applications. A single-pole filter achieves an insertion loss of 1dB at 2.14GHz and suppression of 12dB at 1.95GHz, while the three-pole filter has insertion loss of 8dB at 2.3GHz and provides a suppression of 23dB at 2.1GHz. Both filters are implemented using MIM capacitors and bond wire inductors
We demonstrate that a metal T-gate can significantly lower the gate resistance and improve the RF performance in fully depleted SOI (FDSOI) MOSFETs. FETs with various combinations of number of gate fingers and finger width are compared, and the results show that T-gate provides increased layout flexibility. The effects of the gate resistance on the RF performance are studied and a simplified distributed-gate...
This paper presents a fully differential 60 GHz receiver front-end in SiGe:C technology. It comprises a differential LNA and a Gilbert mixer. The measured down-conversion gain is 28 dB. In the 57-64 GHz band the in-band gain ripple is less than 1 dB, and the output 1-dB compression point is -1.6 dBm. Measured and simulated results agree well over the whole range. The LNA draws 30 mA from a 2.2 V supply...
Common-emitter and common-base SiGe power heterojunction bipolar transistors (PHBTs) with 2mum and 3mum emitter stripe widths have been fabricated and compared. The reduced base pinch resistance resulting from using a heavily doped base region has enabled excellent and equivalent RF performance from SiGe PHBTs of different emitter stripe widths. However, the total device area is saved by using wider...
There is a continuous trend to modularization since information, communication, data processing and automotive industries ask for integration of active and passive devices and further miniaturization. This paper shows how EPCOS, one of the leading component manufacturers is serving the needs of the industries by making use of their advanced LTCC (low temperature cofired ceramics) technology, extensive...
A microresonator concept based on 1:2 internal resonance between the modes of the resonator is explored in this study. The response of the structure under electrostatic actuation is computed and the simulated currents at the input and output ports are presented. Results show that the output current for the T-beam is non-zero for a very small band of frequencies. Unlike linear filters, the proposed...
This work addresses the issue of parasitic conduction at the substrate surface in high resistivity (HR) SOI and oxidized bulk wafers. Surface conduction is related to the presence of free carriers at the SiO2/Si interface and is known to cause severe substrate resistivity degradation. Its impacts on RF losses of coplanar waveguides, substrate crosstalk properties and on the quality factor of spiral...
In this paper, a new technique for design centering and the yield enhancement of millimeter-wave (MMW) circuits is presented using neural networks for circuit modeling and genetic algorithms for parametric yield optimization. A Monte Carlo based method is developed for the yield estimation utilizing the neural network models. The neuro-genetic methodology has been used for the design centering of...
A Si BJT low noise amplifier (LNA) circuit performance under radiated conditions is presented and discussed. The neutron fluence of 5.0E11 n/cm2 showed shifts in LNA performance. The electron bursts produced dose rate upsets in the LNA at higher levels, requiring a 1 to 2 musecond recovery. High energy photon irradiation produced shifts indicating a radiation tolerant process and design, where this...
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