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The effect of low-temperature (up to 600°C) isothermal and isochronous annealing on the electrical characteristics of irradiated n-4H-SiC JBS Schottky diodes is studied. Irradiation is performed with 0.9-MeV electrons at a dose of 1 × 1016 cm–2. It is shown that the forward current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the irradiated diodes are mainly restored at annealing...
In the work presented in this paper we have considered the prototype of a diffusion-welded (DW) high-voltage diode stack made on the basis of commercial SiC JBS diode chips. Implementation of vertical integration for four diode chips yielded a stack with a reverse current of 25 µA under a reverse voltage of 6 kV. The capacitance of the stack at zero bias was reduced more than three-fold in comparison...
Certain novel molecular diagnostics Point-of-Care applications require precise temperature control (±1–5 °C) over an extended time (15–60 minutes) for proper function. Microheating components in portable tests must meet strict criteria with respect to size and power consumption, both of which may be met with thermoelectric heating. Our proposed finite element model is intended to provide tools for...
In this paper are proposed the technique of fragmentation of the p+-pin-n+ structures and preparation of the samples for investigation of transient processes in the space charge region at the interfaces in pin structures. As an example, some results of capacitance-voltage (C-V) investigations and the results of capacity relaxation studies is presented for Schottky contact to p-zone of pin structure...
This work presents the results of capacitance-voltage (C-V), current-voltage (I–V) and deep level transient spectroscopy (DLTS) on special Schottky diode samples fabricated on the basis of GaAs p+-pin-n+ structure. It is shown that in the i-layer and n-region bordering the i-layer is observed “anomalous” stationary capacitance temperature change. DLTS spectra analysis allowed to identify the electron...
This paper presents a complete steady-state analysis of the novel commutating LC-filter based dual active bridge (DAB). Such converter is aimed to be used in the isolation stage of the power electronics transformer. The topology consists of the LC filter coupled with a DAB. The LC filter allows to boost the input voltage by means of shoot-through state of the inverter switches. The output power of...
This paper presents original test results using GaAs and SiC based diode structures instead of Si based fast recovery diode structures to be applied in a new voltage fed step-up DC/DC converter. Overall test results show that the GaAs diodes behave similarly to fast recovery silicon diodes assuming equal operating and cooling conditions. As expected, SiC Schottky diode was found to show a clear advantage...
The paper gives short overview of SiC based complementary multi guard ring JSB structures and the numerical model to be used in the analysis. The static U-I characteristics are under investigation. The geometry and temperature influence has been analyzed.
The comparison of JBS chips and JBS stacks connected in series by diffusion welding DW has been made using deep level spectroscopy (DLTS). As it was expected, JBS stacks are characterized by higher volumes of reverse voltage (Ur), higher series resistance (Rs) and, therefore, higher forward voltage (Uf). In the stacks two times reducing of capacitance has been fixed. Diffusion welding (DW) technique...
The paper gives short overview of an efficient CMOS technology based current source realization and layout design. The current source output will be shortened square wave signal [1],[2] and [3]. The output current value can be selected from range 5 to 100μA. The current source layout design needs good matching, the geometry and temperature influence has been analyzed and the optimal geometrical structure...
The determination of technical requirements for GaAs epistructures intended for high voltage diode stacks has been made. The suitable doping level of p+ substrate was estimated by the contact resistance measurements. Analysis has shown that for the p+ substrates with the current densities about 0.5-1 A/cm2 the specific contact resistance depends weakly on doping concentration (at least in the range...
Films deposited with the Liquid Phase Epitaxy (LPE)technology on the monocristallic GaAs substrates for high voltage power p+-p-i-n-n+ GaAs structures has been developed. Proposed technological and hardware solutions of LPE allow the high efficiency of growing process of diode structures with defined ratings and high structural quality of epitaxial layers. The method and technology for fabrication...
Modelling of SiC based Schottky interfaces using shape factor (SF) is a novel approach for the SiC Schottky interfaces. The determining of the behaviour of the charge carrier transport under influence of the change of parameters like impurity concentration, barrier height and ambient temperature is discussed. Unified handling methodology has been demonstrated.
In the present work the results of transmission electron microscopy (TEM) and electron diffraction investigations of subcontact layers in n0-n- 4H-SiC epistructure after diffusion welding (DW) are given. TEM examinations show that at the boundary between aluminium and silicon carbide the interface layer of ~ 25 nm thickness exists and this layer is of strip character. The image of contact area obtained...
The aim of this article is to present the features of chronic renal disease (CRD) that influence the conduct of anaesthesia and to introduce some of the anaesthetic techniques used for this challenging group of patients, including anaesthesia for renal transplantation.
This paper presents results of simulation of SiC based complementary JBS devices. The inner processes of JBS have been investigated to get better understanding of the main parameters inside the JBS device, which have most important influence on electrical characteristics of the device and which can not be measured by traditional techniques. The best complementary solutions of JBS devices for power...
The specification characteristics of power electronic applications can be improved by use of the recent high-speed power devices. The Schottky structure has been developed for direct type converter circuits. The description of real layout and testing methodology of an experimental sample of 4H-SiC Schottky barrier diode manufactured by diffusion welding has been given. Presented results of timing...
The basic Schottky parameters for combined sputter and diffusion welded metal contacts are exposed in this paper. The characteristic parameters have been obtained by I-V temperature measurement on the clamp-mode large area SiC Schottky diodes
This paper is devoted to the results of a diffusion welding technique applied to solve the problem of packaging for large area SiC Schottky diodes. The forward current-voltage characteristics measured at 75 A measured for packaged diodes yields 250 A/cm2 (70A) at 1.9 V forward voltage. Reverse recovery time for packaged diodes was in the range of 29-36 ns
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