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In this paper the investigation of degradation 4H-SiC Schottky diodes parameters after irradiation by electrons with an energy of 0.9 MeV has been done. It was determined that the carrier removal rate (Vd) is 0.07–0.09 cm−1. It is shown that the investigated Schottky diodes retained rectifying current-voltage characteristics for up to doses of ∼ 101 cm−2. It is concluded that the radiation resistance...
In the work presented in this paper we have considered the prototype of a diffusion-welded (DW) high-voltage diode stack made on the basis of commercial SiC JBS diode chips. Implementation of vertical integration for four diode chips yielded a stack with a reverse current of 25 µA under a reverse voltage of 6 kV. The capacitance of the stack at zero bias was reduced more than three-fold in comparison...
In this paper are proposed the technique of fragmentation of the p+-pin-n+ structures and preparation of the samples for investigation of transient processes in the space charge region at the interfaces in pin structures. As an example, some results of capacitance-voltage (C-V) investigations and the results of capacity relaxation studies is presented for Schottky contact to p-zone of pin structure...
This work presents the results of capacitance-voltage (C-V), current-voltage (I–V) and deep level transient spectroscopy (DLTS) on special Schottky diode samples fabricated on the basis of GaAs p+-pin-n+ structure. It is shown that in the i-layer and n-region bordering the i-layer is observed “anomalous” stationary capacitance temperature change. DLTS spectra analysis allowed to identify the electron...
The comparison of JBS chips and JBS stacks connected in series by diffusion welding DW has been made using deep level spectroscopy (DLTS). As it was expected, JBS stacks are characterized by higher volumes of reverse voltage (Ur), higher series resistance (Rs) and, therefore, higher forward voltage (Uf). In the stacks two times reducing of capacitance has been fixed. Diffusion welding (DW) technique...
The determination of technical requirements for GaAs epistructures intended for high voltage diode stacks has been made. The suitable doping level of p+ substrate was estimated by the contact resistance measurements. Analysis has shown that for the p+ substrates with the current densities about 0.5-1 A/cm2 the specific contact resistance depends weakly on doping concentration (at least in the range...
In the present work the results of transmission electron microscopy (TEM) and electron diffraction investigations of subcontact layers in n0-n- 4H-SiC epistructure after diffusion welding (DW) are given. TEM examinations show that at the boundary between aluminium and silicon carbide the interface layer of ~ 25 nm thickness exists and this layer is of strip character. The image of contact area obtained...
The work examines the effect of controlled shot peening (CSP), laser shock peening (LSP) and ultrasonic impact treatment (UIT) on the fatigue behavior of 2024-T351 aluminum alloy. The testing methodology has been designed to extract information regarding specific products of the treatments and their individual affect on fatigue damage. The work concludes that all three surface treatments improve the...
The basic Schottky parameters for combined sputter and diffusion welded metal contacts are exposed in this paper. The characteristic parameters have been obtained by I-V temperature measurement on the clamp-mode large area SiC Schottky diodes
This paper is devoted to the results of a diffusion welding technique applied to solve the problem of packaging for large area SiC Schottky diodes. The forward current-voltage characteristics measured at 75 A measured for packaged diodes yields 250 A/cm2 (70A) at 1.9 V forward voltage. Reverse recovery time for packaged diodes was in the range of 29-36 ns
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