The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The effect of low-temperature (up to 600°C) isothermal and isochronous annealing on the electrical characteristics of irradiated n-4H-SiC JBS Schottky diodes is studied. Irradiation is performed with 0.9-MeV electrons at a dose of 1 × 1016 cm–2. It is shown that the forward current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the irradiated diodes are mainly restored at annealing...
In this paper the investigation of degradation 4H-SiC Schottky diodes parameters after irradiation by electrons with an energy of 0.9 MeV has been done. It was determined that the carrier removal rate (Vd) is 0.07–0.09 cm−1. It is shown that the investigated Schottky diodes retained rectifying current-voltage characteristics for up to doses of ∼ 101 cm−2. It is concluded that the radiation resistance...
In the work presented in this paper we have considered the prototype of a diffusion-welded (DW) high-voltage diode stack made on the basis of commercial SiC JBS diode chips. Implementation of vertical integration for four diode chips yielded a stack with a reverse current of 25 µA under a reverse voltage of 6 kV. The capacitance of the stack at zero bias was reduced more than three-fold in comparison...
In this paper are proposed the technique of fragmentation of the p+-pin-n+ structures and preparation of the samples for investigation of transient processes in the space charge region at the interfaces in pin structures. As an example, some results of capacitance-voltage (C-V) investigations and the results of capacity relaxation studies is presented for Schottky contact to p-zone of pin structure...
This work presents the results of capacitance-voltage (C-V), current-voltage (I–V) and deep level transient spectroscopy (DLTS) on special Schottky diode samples fabricated on the basis of GaAs p+-pin-n+ structure. It is shown that in the i-layer and n-region bordering the i-layer is observed “anomalous” stationary capacitance temperature change. DLTS spectra analysis allowed to identify the electron...
The comparison of JBS chips and JBS stacks connected in series by diffusion welding DW has been made using deep level spectroscopy (DLTS). As it was expected, JBS stacks are characterized by higher volumes of reverse voltage (Ur), higher series resistance (Rs) and, therefore, higher forward voltage (Uf). In the stacks two times reducing of capacitance has been fixed. Diffusion welding (DW) technique...
The determination of technical requirements for GaAs epistructures intended for high voltage diode stacks has been made. The suitable doping level of p+ substrate was estimated by the contact resistance measurements. Analysis has shown that for the p+ substrates with the current densities about 0.5-1 A/cm2 the specific contact resistance depends weakly on doping concentration (at least in the range...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.