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Using the reducing activity of ballistic hot electrons emitted from a nanocrystalline silicon (nc-Si) diode, it is demonstrated that thin Si and Ge films can be deposited under a situation that output electrons directly impinge upon a SiCl4 or GeCl4 solution-coated target substrate located in close proximity to the nc-Si emitter. After the electron incidence, uniform deposition of thin Si or Ge films...
Recently, resistive switches have been constructed from nanogap electrodes. We have already reported a simple method for the fabrication of nanogaps with well-controlled tunnel resistance, which is called “activation”. Since the activation is considered to be the method of transferring atoms across the nanogap, it is expected that a resistive switching effect is caused in the nanogaps controlled by...
Electromigration (EM) method for the fabrication of nanogaps is specifically simple as compared with other methods because it is achieved by only passing a current through a metal nanowire. However, typical EM procedure induces an abrupt break that yields a nanogap with high tunnel resistance. Hence, various approaches have been reported to address this problem, and feedback-controlled electromigration...
We report temperature distribution of graphene during Joule heating process using in-situ near-infrared (NIR) charge-coupled device (CCD) imaging system. Graphene layers were prepared using mechanical exfoliation of a pyrolytic graphite sheet (PGS), which is commercially available from an industrial materials company, and were then deposited on SiO2/Si substrates with approximately 780 nm thermally...
We report a newly investigated technique for the tuning of tunnel resistance of nanogaps using electromigration phenomena induced by a field emission current, which is called “activation” method. First, Planar-type initial nanogaps of Ni separated by 20–50 nm were defined on SiO2/Si substrates. Then, a bias current was applied to the initial Ni nanogaps at room temperature using a current source....
We report a simple and easy method for the control of electrical characteristics of planar-type nanogap-based single-electron transistors (SETs) using field-emission-induced electromigration, which is so-called “activation”. The advantages of this method are as follows: (1) the fabrication of SETs is achieved by only passing a field emission current through a nanogap and (2) the charging energy of...
Nanolithography of graphene surfaces using scanning probe microscopy (SPM) scratching with a diamond-coated tip was systematically investigated. The graphene films were obtained by mechanical exfoliation of pyrolytic graphite sheet (PGS). The groove size increased linearly with the applied force. Furthermore, there were no effects of scan speed and scratch angle on the groove size. These results imply...
We report the conduction mechanism of the single-electron transistors (SETs) fabricated by field-emission-induced electromigration, which is so-called “activation”. By applying the activation to Ni nanogaps, we were easily able to fabricate the SETs operating at room temperature. Additionally, strong Coulomb staircases were clearly obtained, and the quasi-periodic current oscillations were also observed...
Quantum point contacts (QPCs) are formed by mechanically scratching Au channels with a scanning probe microscope (SPM) in ambient condition. A variation of electrical properties of the Au channels was caused by a direct modification of the channels using SPM scratching and was in-situ controlled by monitoring the conductance across the scratched region. Such in-situ measurements provide a more accurate...
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