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A novel lifting-off method of ZnO nanowires from Si substrate and embedded in flexible films have been proposed in this study. Compared with peeling-off method by polydimethyl- siloxane (PDMS), the embedded ZnO nanowires may suffer from external forces to change the dimension. The shape of ZnO nanowires remained almost unchanged after using the novel lifting-off process. Flexible films served as the...
The use of carbon nanotubes (CNTs) for electrical interconnections is hinder by the possibility of growing CNT directly onto metallization. The introduction of barrier layer between catalyst and metallization is thus essential to permit the direct growth of vertically aligned CNT bundles using CVD approaches. As a result, the resultant CNT bundle resistivity is not only a function of the densities...
This paper investigates low temperature in situ steam generation (ISSG) oxidation, the correlation between the thickness growth rate and temperature, pressure, hydrogen flow and oxidation time. For low temperature ISSG oxidation, the within wafer uniformity is improved by increasing the temperature. An optimum pressure is revealed for all the possible hydrogen concentrations studied in this paper...
The Triple-Gate (TG) MOSFET has emerged as one of the promising devices to extend CMOS technology beyond the scaling limit of conventional CMOS technology. Triple gate MOSFET has an excellent scalability and better Short Channel Effect immunity. They are used for CMOS applications beyond the 22 nm node. In order to reduce the leakage current for device beyond the 22 nm, the gate dielectric is replaced...
In a compact model, an off-state current involving a recursive calculation of one-particle self-consistent (SC) potential does not vanish over a metal gate/insulators/semiconductor (MIS) structure of ultra-low temperature (< 4.5°K) metal-oxide-semiconductor field-effect transistor (ULTMOSFET). When operating the ULTMOSFET in the near flatband mode, the SC potential calculation relying on SC Schrödinger-Poisson...
This work reports on possible ways of improving analog/RF performance metrics, through device structure optimization, for low power applications. It is shown that underlap source/drain (S/D) design and junctionless transistor architecture can both yield improved analog/RF figures of merit in comparison to conventional abrupt source/drain MOSFETs. Junctionless devices overcome the gain-bandwidth trade-off...
The gadolinium oxide nanocrystal (Gd2O3-NCs) memory has been demonstrated with large memory window and good reliabilities. It has been proven that the charges are stored in the crystallized Gd2O3-NCs which are surrounded by trapping-free amorphous phase of Gd2O3 film. The calculated deep trapping energy level is about 1.7eV below the conduction of the Gd2O3-NCs, and the energy band diagram of the...
The threshold voltage (VT) control of gate-all-around (GAA) MOSFETs as an extreme case of multi-gate MOSFETs is studied. After breaking down the components constituting VT into several terms, their relative sizes are compared using TCAD technique and analytical calculation of quantum mechanical problem. As a result, the channel diameter is found to be an important knob to control VT of a GAA MOSFET,...
The hybrid phosphor structure for white light-emitting diodes application was reported. It was demonstrated that the improvement of the luminous efficiency as well as the good uniform angular correlated color temperature (CCT) in hybrid phosphor structure compared with the conventional dispense method. The experimental results showed the CCT deviation was improved from 453K to 280K in the range of...
Institute of Microelectronics, A∗STAR (Agency for Science, Technology and Research) 11 Science Park Road, Singapore Science Park II, Singapore 117685 Vertical Cu-insulator-Si hybrid plasmonic waveguides (HPWs) along with various passive components are fabricated on a silicon-on-insulator platform using standard complementary metal-oxide-semiconductor (CMOS), technology and characterized at 1550-nm...
The multi-ion sensing properties of graphene based field effect transistor were investigated in this paper. Hydrogen and potassium ion sensitivities were measured. The believable detection concentration region was also defined. Finally, the distribution of time-dependence drift coefficient was also discussed. (keywords: graphene, ion sensitive field effect transistor, drift coefficient, potassium,...
A small scale (20 μm), ultra sensitive (50 ppb) and highly selective sensor based on ZnO nanostructures using Micro-electro-mechanical system (MEMS) platform has been reported here for the detection of explosive and Volatile Organic Compound (VOC) vapors. Flower and rod like architectures of nanorods were used as a sensing layer. The nanorods prepared via chemical synthesis were uniform with diameters...
We pattern a metal film into different nanostructures to investigate the influence of surface plasmonic modes and the effects on the sensitivity to the change of environment's refractive indexes. We find out that 1-D nanoslit array structures and grating structures have much higher sensitivity than 2-D nanoisland array structures and nanowindow array structures when detect the molecules with moderate...
Highly ordered oxide nanotubes are fabricated by a simple two-step method which consists of the magnetron sputtering deposition of copper nanowires on nanograted template surfaces and the thermal oxidation of the nanowires in ambient air at 300 °C. The formation of the organized copper oxide nanotubes is explained according to the nanoscale Kirkendall effect which comes into play at the metal/metal-oxide...
In this paper, boron nitride (BN) films were deposited on silicon substrates by RF magnetron sputtering under different bias voltages. Microstructure and piezoelectric properties of BN films were characterized by FTIR, SEM, AFM and PFM. The results show that surface of films are of lower roughness, while the highest cubic phase volume fraction appeared (about 95%) under bias voltage 120V. And the...
Dielectrophoresis is one of the popular methods in making carbon nanotube (CNT) devices using CNT solutions on pre-patterned electrodes. The interaction between the deposited and suspended nanotubes during deposition, together with the type of solution (containing surfactants or not) and electrode geometries have a significant effect in the dynamics and the results of the deposition. Here, we report...
We report the growth of rock-salt CrTe thin film on MgO substrate by molecular-beam epitaxy (MBE). Our high-resolution transmission electron microscopy (HRTEM) results show that a metastable rock-salt (RS) CrTe film can be achieved in a crystalline phase with thickness of 50 nm. The temperature dependence of remanent magnetization shows two ferromagnetic transition temperatures at 165 K and > 400...
Flexible nanoelectronics have drawn increasing attention over the past few years, for their unique properties such as bendable, reliable or foldable, can conformai attached to any shape of surfaces, light weight, etc. The device speed of flexible nanoelectronics has been increasing and reached RF/microwave regime as new fabrication/design techniques are developed. In order to provide design guidelines...
MIM diodes based on Nb/Nb2O5 are analyzed. The tunneling probability calculation is based on the transfer matrix method and the non equilibrium green's function. Contour plots are presented showing the effect of the oxide thickness and the work function difference between the left metal electrode, Nb and the right metal electrode on the diode resistance, responsivity, and non linearity. Also, the...
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