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Arrays of horizontally suspended carbon nanotube (HSCNT) bundles were grown from selected silicon trench sidewalls with help of micromachining technologies. The key process is the patterning of an iron (Fe) catalyst layer onto selected silicon trench sidewalls through a shadow mask placed on top of silicon trenches by the tilted electron beam evaporation technique. These HSCNTs bundle arrays are promising...
In this paper, we have presented the design and invention of an electronic nose (E-nose) that can work and analyze the results via a network system such as LAN or WiFi. The MWCNTs/polymer composites were used as a gas sensor array. The constant current circuit was newly designed for gas sensor measurement. The fabricated E-nose showed a high performance for indoor air monitoring with very low noise.
We demonstrate experimentally the improvement of the external quantum efficiency (EQE) and current-matching of the triple-junction GaAs-based solar cell using periodic-patterns incorporated with random nano-sized indium-nanoparticles plasmonics. The average EQE decreased of −9.8% in top-cell and increased of +2.4% in middle-cell were obtained as the solar cell with periodic-patterns random nano-size...
Well-defined Zn0.9Li0.1O nanorods were hydrothermally synthesized at the low temperature of 90°C on the sputtered ZnO seed layer in different thickness, 20 nm and 50 nm. The x-ray diffraction patterns of both samples with a single diffraction peak (002) showed the same wurtzite hexagonal structure. The length and diameter of the nanorods were both increased from 1.12 μm to 1.47 μm and 95 nm to 113...
In this paper, a systematic design and analysis of slanting silicon nanohole structure is simulated using the finite element method. The slanting nanohole structure is based on the Si (111) wafer. The impact of the hole diameter and structural periodicity has been investigated. It is found that the absorption is significantly enhanced due to the strong light trapping ability of slanting nanohole structure...
We will show the current-voltage behaviors and band diagrams of HIT cells with and without hole thermionic emission model. When the hole thermionic emission model is not included, only drift diffusion model is used. In such a case, the calculated current would be much larger than the practical value.
Quantum dot light-emitting diodes (QD-LEDs) using InP/ZnSe/ZnS muitishell colloidal quantum dots (QDs) which were prepared by simple heating-up method were designed on polyethylene naphthalate (PEN) substrate for rugged optoelectronic device. The synthesized InP/ZnSe/ZnS multishell QDs exhibited an emission peak at 545 nm for clear green color with a full-width at half-maximum (FWHM) of 50 nm, and...
In this paper, a novel design for far infrared resonant cavity enhanced quantum dot photo-detector (RCE QDP) based on bound-to-bound intervalence subband transitions in self assembled InAs/GaAs quantum dots (QDs) is presented. The device structure consists of QDs active layers inserted between two distributed Bragg reflectors (DBRs). Quantum efficiency is calculated as a function of wavelength for...
A comprehensive device modeling for thin film CIGS-based solar cell with MgZnO buffer layer has been performed. The effects of thickness, doping, and alloy composition of various device constituent layers are extensively studied while optimizing device performance of the solar cell at room temperature. In this study, a maximum power conversion efficiency of 21.4% is achieved with performance parameters...
Monodisperse colloidal particles have attracted much attention not only for their scientific interest but also for many technological applications. However, many kinds of toxic chemicals or solvents are usually involved in the particle preparation process. Recently, anionie surfactants derived from diverse amino acids have been applied to the synthesis of nanosized materials. Amino acid is non-toxic...
This paper describes the fabrication and high speed characterization for uni-traveling-carrier photodetectors (UTC-PD) with dipole-doping layers. The dipole-doping InGaAs/InP layer has been introduced at the InGaAs (absorption layer) and InP (collection layer) interface to prevent current blocking in our UTC-PD devices. These UTC-PDs have achieved high photocurrent of 52 mA, high responsivity of 0...
In this paper, feasibility of using pseudo-rigid-body modeling technique in examined on a simple modular compliant mechanism. A mathematical model is constructed to determine the non-linear behavior of large-deflections. The problem is solved using an iterative method. The solution to the non-linear model is then compared to empirical results collected from a mock-up of the compliant device. The pseudo-rigid-body...
Nanolithography of graphene surfaces using scanning probe microscopy (SPM) scratching with a diamond-coated tip was systematically investigated. The graphene films were obtained by mechanical exfoliation of pyrolytic graphite sheet (PGS). The groove size increased linearly with the applied force. Furthermore, there were no effects of scan speed and scratch angle on the groove size. These results imply...
Cu-doped ZnO nanoparticles were synthesized by co-precipitation method using zinc nitrate (Zn(NO3)2-6H2O), copper(II) nitrate trihydrate (Cu(NO3)2-3 H2O) as starting precursors for Zn and Cu sources, respectively. The structural properties of powders were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM) and X-ray Photoelectron Spectroscopy (XPS). The XRD...
Temperature (20–100 °C) and excitation power (10–700 mW)-dependent photoluminescence (PL) measurements have been carried out on the 1.3 μm GaAs-based InAs quantum dot (QD) laser structures. Rate equation was used to interpret the PL behavior of the QD. The exciton behavior of the carriers in InAs QD has been verified. The excitonic modal gain has been calculated (under exciton picture) and compared...
The trap exploration of Pt/ZnO/Pt memory cells was made. Based on the temperature dependence of I-V characteristics, the conduction mechanisms in ZnO films are dominated by the hopping conduction and ohmic conduction in high-resistance state (HRS) and low-resistance state (LRS), respectively. Simulation results show that the trap spacing and trap energy level in HRS are around 2 nm and 0.46 eV, respectively...
We report a unidirectional bipolar resistive switching in an n-type GaOx/p-type NiOx heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching (RS) of the heterojunction directly relate with the concentration of intrinsic defects in oxide, such as oxygen vacancies and oxygen ions. Under external electric field, these electromigrated defects accumulate at the pn...
The random access memory (RRAM) cells consisted with the Cu doped TiO2 film and both Pt inert electrodes has been purposed. Compared with the common conductive-bridging mode sample structure which have a Cu active electrode, a non-doped TiO2 film and a Pt inert electrode. The Cu doped film with both inert electrodes sample exhibited the endurance of 1000 cycles more than the common ones of 400 cycles...
This paper presents an in-depth analysis of Cd0.4Zn0.6O/ZnO multiple quantum well light emitting diode (LED) using commercial simulation software and experimentally optimized growth conditions of n-type ZnO on Si (001) substrate by dual ion beam sputtering deposition (DIBSD) system. Theoretical study reveals an internal quantum efficiency −93.5% is achieved at room temperature from the device, emitting...
This paper investigates low temperature in situ steam generation (ISSG) oxidation, the correlation between the thickness growth rate and temperature, pressure, hydrogen flow and oxidation time. For low temperature ISSG oxidation, the within wafer uniformity is improved by increasing the temperature. An optimum pressure is revealed for all the possible hydrogen concentrations studied in this paper...
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