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For assembly process, materials are important like substrate, bump type, UF type… etc. We focus on the surface of substrate in this research. The surface is one of the key factors to widen the process window with same process condition. Roughness will impact the flowing capability of UF dispensing and adhesion. It may cause void issue, poor adhesion and reliability fail. In this study, plasma and...
In 3D-IC packages, the Si-to-Si stacking is joint by u-bump which has fine gap structure and high bump count. Because of the high density structure, the flux clean process face challenges. So, non-clean flux is another alternative. However, the flux residue can cause reliability issue such as UF delamination, corrosive relation, electro-migration due to the residue from flux. To reduce the flux residue...
For the advanced 3DIC packages with features as large die dimension and fine bump pitch, plasma was difficult to penetrate into the center of package. Plasma power, treating time, and gas flow rate were evaluated in this study to enhance the penetration ability of oxygen radical. Contact angle measurement was taken to judge the treatment effect. For the package with die size beyond 25 × 25 mm, contact...
Along with the die size of device become more and more small, fine pitch, fine gap and multi-stacking are the market mainstream which applied for high performance system in advance technology, su ch as 3D IC. Th erefore, h eat dissipation is must process for this kind of electronic device to avoid internal heating form device during operate. Un derfill (UF) is an important process in 3D stackin g...
Three dimensional (3D) stacking technologies have been popular among in high level package that can meet miniaturization trend, high performance, and multi-function electronic products. The interposer where the chips are stacked on is an electrical interface routing between one socket or connection to another. Underfill (UF) material is required to fill in the gap between chip and interposer for protecting...
Micro bump interconnect with through-silicon via (TSV) is one of the critical issues for realizing three dimensional (3D) packages. This enabling technology provides more I/O in shrunken die area, and hence high density interconnection. Electroless Ni immersion Au (ENIG), electroless Ni electroless Pd immersion Au (ENEPIG), and plating Tin are commonly used surface finish for Cu pad in lead-free package...
Three dimensional (3D) stacking technology has been purposed to meet miniaturization trend, high performance, and multi-function electronic products. Chip stacking with through silicon via (TSV) and high density lead free interconnection are believed to realize 3D stacking package. Due to the narrow dispensing request for multi-chip connection, non-conductive paste (NCP) is one of the solutions to...
High density interconnection is a key technology to realize the miniaturization trend in Integrated Circuit (IC) industry, and to reduce power consumption for next generation mobile devices. In advanced three-dimensional (3D) package, fine pitch pillar bump is deployed not only to fulfill ever-growing I/O density requirement, but also provides better electrical performance than that of traditionally...
In order to meet the miniaturization trend and to reduce the power consumption for next generation devices, three-dimensional (3D) stacking is believed to be one of the technologies that can meet these requirements. In advanced 3D stacking technologies, one of the important steps is to develop and assembly fine pitch and high density microbumps. However, while the stacking chip size of top die and...
Underfill (UF) is an important process in flip-chip packaging because of significant impact on the reliability of the IC's package. For three-dimensional integrated circuit (3DIC) demand, fin e pit ch an d fine gap are the market trend in the future due to t he requirements of functionality and performance in electronic device. In this study, a two die stacking, with Cu pillar bumps area of multiple...
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