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Nowadays, 2.5D and 3D stacked die technologies are under prosperous development for the benefit of transistor scaling and performance. However, with the trend of higher electrical performance, lower power consumption and cost effective demand, Non-TSV interposer (NTI) is one of the ways to meet the requirement. This paper introduces and demonstrates the NTI process flow, which includes chip-on-wafer...
Micro bump interconnect with through-silicon via (TSV) is one of the critical issues for realizing three dimensional (3D) packages. This enabling technology provides more I/O in shrunken die area, and hence high density interconnection. Electroless Ni immersion Au (ENIG), electroless Ni electroless Pd immersion Au (ENEPIG), and plating Tin are commonly used surface finish for Cu pad in lead-free package...
High density interconnection is a key technology to realize the miniaturization trend in Integrated Circuit (IC) industry, and to reduce power consumption for next generation mobile devices. In advanced three-dimensional (3D) package, fine pitch pillar bump is deployed not only to fulfill ever-growing I/O density requirement, but also provides better electrical performance than that of traditionally...
In order to meet the miniaturization trend and to reduce the power consumption for next generation devices, three-dimensional (3D) stacking is believed to be one of the technologies that can meet these requirements. In advanced 3D stacking technologies, one of the important steps is to develop and assembly fine pitch and high density microbumps. However, while the stacking chip size of top die and...
Underfill (UF) is an important process in flip-chip packaging because of significant impact on the reliability of the IC's package. For three-dimensional integrated circuit (3DIC) demand, fin e pit ch an d fine gap are the market trend in the future due to t he requirements of functionality and performance in electronic device. In this study, a two die stacking, with Cu pillar bumps area of multiple...
Low-k dielectrics materials in the active layers on the chip surface has become a hot topic as most 90 nm devices and all 65 nm devices utilize low-k dielectrics materials. Low-k dielectrics materials provide a significant increase in performance of the devices but low-k materials have very low mechanical strength compared to the traditional dielectric films due to their porous nature, which results...
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