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In 3D-IC packages, the Si-to-Si stacking is joint by u-bump which has fine gap structure and high bump count. Because of the high density structure, the flux clean process face challenges. So, non-clean flux is another alternative. However, the flux residue can cause reliability issue such as UF delamination, corrosive relation, electro-migration due to the residue from flux. To reduce the flux residue...
Micro bump interconnect with through-silicon via (TSV) is one of the critical issues for realizing three dimensional (3D) packages. This enabling technology provides more I/O in shrunken die area, and hence high density interconnection. Electroless Ni immersion Au (ENIG), electroless Ni electroless Pd immersion Au (ENEPIG), and plating Tin are commonly used surface finish for Cu pad in lead-free package...
Underfill (UF) is an important process in flip-chip packaging because of significant impact on the reliability of the IC's package. For three-dimensional integrated circuit (3DIC) demand, fin e pit ch an d fine gap are the market trend in the future due to t he requirements of functionality and performance in electronic device. In this study, a two die stacking, with Cu pillar bumps area of multiple...
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