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The influence of interconnect parasitics on the lateral scaling of emitter stripe width of large-area SiGe power heterojunction bipolar transistors (HBTs) are analytically studied and experimentally verified. It is found that, due to the increased parasitics along with the increase of device area, the maximum oscillation frequency (fmax ) of a power SiGe HBT cannot be improved monotonically with the...
The emitter stripe width scaling issues for power SiGe HBTs are fully investigated in this work. Both theoretical and experimental results show that the fmax of power SiGe HBTs heavily depends on the emitter stripe width. Different from high speed device design principle, downscale of emitter stripe width is not always valid to improve the performance of power devices due to the presence of significant...
Common-emitter and common-base SiGe power heterojunction bipolar transistors (PHBTs) with 2mum and 3mum emitter stripe widths have been fabricated and compared. The reduced base pinch resistance resulting from using a heavily doped base region has enabled excellent and equivalent RF performance from SiGe PHBTs of different emitter stripe widths. However, the total device area is saved by using wider...
A new record (FOM=3.8times105 mWmiddotGHz2 ) of power performance for SiGe power HBTs has been established in this study. By employing an extremely heavily doped base region, a record low sheet resistance of the pinch base is achieved, which offers a small base resistance and the feasibility of using wider emitter stripes. The reduction of base-collector capacitance and device size, due to the use...
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