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The authors present the result of efficiently producing the THz radiations by using collinear phase-matched difference-frequency generation (DFG) in a GaP crystal. The authors have extended the THz output wavelengths to as long as 2830 mum. In addition, the peak power has reached 15.6 W. Since GaP is a cubic crystal, there is no need to rotate this in order to tune the output wavelength in a wide...
An experimental investigation of the effects of temperature between 218K and 393K of FinFET operation in weak inversion is reported. The threshold voltage, subthreshold swing and the drain current at which extrapolated threshold voltage is defined, IVT, of fully depleted double gate n-type FinFETs are analysed. A VT temperature coefficient of -0.7mV/K is experimentally observed for our FinFETs, greater...
A novel high performance integrated PTPD is proposed. The device incorporates a standard phototransistor (PT) and a surface photodetector (SPD) to frilly utilize the incident light energy. Samples in standard 0.35mum SiGe BiCMOS technology were fabricated and characterized. Compared with reference PT of the same size, the PTPD exhibits one order of magnitude improvement in responsivity
A novel logic circuit using resonant-tunneling diodes (RTD), called a 4RTD logic gate, was proposed recently, and possible 200-GHz AND/OR and NAND/NOR operations were predicted by circuit simulations [Yamada,2005]. This paper presents, for the first time, experimental results of the 4RTD logic gate. In particular, an experimental current-mode AND gate has been successfully demonstrated
III-nitride based semiconductors have been under intense research focus in recent years largely due to their electronic and optoelectronic applications. In comparison to large area devices, III-nitride nanowire based devices provide unique opportunity to dramatically improve device efficiency and scope of integration, as well as, reduce device cost. In this talk, the author present the growth, device...
In this talk, the authors discuss their effort in modeling charge transport (1) in a single nanotube coupled to contacts (intra-nanotube transport) and (2) across multiple nanotubes representative of a simplified fiber (inter-nanotube transport). Accurate modeling of transport in these systems is intrinsically quantum mechanical because it is essential to model tunneling, even in metallic nanotubes...
In this paper, the authors have proposed the novel TCG-SGT flash memory cell. In addition, the authors have derived the capacitive-coupling ratio and, through process simulation, have proposed a fabrication process for the device. It is obvious that the TCG-SGT memory cell produces a coupling ratio that is exceptionally higher than conventional flash memory cells, making it suitable for future high-density...
We report an on-chip method for actuating an optical fiber in 2-axes. Opposing comb-drive actuators with integrated 3-D wedges (fabricated using gray-scale technology (Morgan, 2004)) create a translatable, variable height v-groove to alter the horizontal and vertical alignment of an optical fiber cantilever. Actuation of a cleaved fiber tip over a diamond shaped area >35mum in each direction is...
Summary form only given. Self-organized quantum dots (QDs) offer unique opportunities to realize new types of semiconductor lasers and spontaneous light sources. One of the more interesting and potentially important is their use in microcavities. In this paper the authors describe experimental data based on incorporating self-organized QDs in a new type of all-epitaxial microcavity that can form a...
We have presented a methodology for modeling complex on-chip interconnect networks in a computationally efficient manner. The method depends on defining unit cells, which can comprise any interconnect network, and assigning equivalent circuits to each unit cell, which are brought together to form a full network. We have showed that to find the response at a given point to a random input, all we need...
Microdisk lasers have been attracting much attention since the 1990's as extremely compact sources of light (McCall, 1992). Lasing in disks of 1-10mum diameter and 100-200 nm thickness, containing one or several quantum wells or layers of quantum dots has been achieved both with photopump and injection of current. The main features of such lasers are: (i) periodically spaced frequencies of lasing,...
Mercury cadmium telluride (HgCdTe) has found applications for infrared photodetectors. By varying the bandgap using the composition parameter x, Hg1-xCdxTe can be optimized for detecting wavelengths ranging from 3-17mum (Saleh and Teich, 1991). One critical factor in detecting low energy light is that the bandgap of HgCdTe is relatively small (approx. 0.2eV), and thus temperature dependent dark current...
Many IC applications employ both analog and digital circuits, and therefore it is desirable to integrate both analog and digital functions on the same chip (mixed signal chip). A mixed signal chip uses logic gates to perform digital signal processing while the analog cells allow the chip to interface with the analog environment. These analog cells include I/O blocks containing resistors, capacitors,...
The ultra thin Ge epitaxially grown on Si with compressive strain has the advantages of high mobility, very low cost and compatibility with CMOS process. The epi-Ge channel needs to be thick enough for carrier transport and as thin as possible to keep Ge strained. In this work, we investigate and optimize the channel design of Ge/Si heterojunction PMOS
Ultraviolet (UV) light emitting diodes (LEDs) are expected to find applications for solid-state lighting, water and air purification, bio-agent detection, and biological fluorescence experiments. For identifying miniscule amounts of hazardous biological pathogens and for the detection of fluorescence from protein molecules excited with the UV light (200-300nm) the light source must exhibit low noise...
With the rapid development of high-power white light-emitting diodes (LEDs), advances in packaging are required to further improve the device performance. In this work, an optimized packaging configuration for high power LED lamps with enhanced phosphorescence efficiency is presented based on ray-tracing simulations and experimental results
Nanotechnology is proliferating at a rapid rate in many areas including semiconductor lasers, biotechnology, and optoelectronics, as researchers create applications which capitalize on the unique advantages operating on the nanoscale afford them. In the case of semiconductor lasers it was found that by creating active layers on order of the de Broglie wavelength in all spatial directions, the movement...
A one-dimensional (1-D) surface potential based sub-threshold model for symmetric double-gate MOSFET (DG MOSFET) is proposed. The model provides useful insight into the device behaviour. The proposed model shows good agreement with the two-dimensional (2-D) numerical simulation results for sub-threshold current, sub-threshold swing, threshold voltage roll-off and drain induced barrier lowering. The...
In this paper, we have developed a novel two dimensional (2D) analytical approach to modeling the 2D electrostatics and the threshold voltage occurring within short-channel multi-gate SOI MOSFETs based on extensive and necessary modifications made to the widely used quasi-2D parabolic potential modeling scheme. In this abstract, we will pay special attention to the electrostatic potential distributions...
The impact of epitaxial NiSi2 S/D on MOSFET performance has been investigated. Atomically flat NiSi2/Si (111)-facet interface and straight S/D edges irrespective of the gate edge roughness contribute to suppressing SCE
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