A new record (FOM=3.8times105 mWmiddotGHz2 ) of power performance for SiGe power HBTs has been established in this study. By employing an extremely heavily doped base region, a record low sheet resistance of the pinch base is achieved, which offers a small base resistance and the feasibility of using wider emitter stripes. The reduction of base-collector capacitance and device size, due to the use of wider emitter stripes, dramatically improve the power gain and thus the power added efficiency