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Over the past decade, SiGe BiCMOS processes have become a mainstay in the Front-End-Module (FEM) of commercial radio products. SiGe BiCMOS processes offer an excellent compromise between the low cost of commodity CMOS and the high performance of III-V based technologies. This allows them to address many of the difficult specification challenges of FEM components in cellular phones and other complex...
Improvements in foundry RF and mm-wave Si offerings over the last several years have allowed it to take market share from III-V processes for TX / RX applications. The increased RF switch content in handsets is now dominated by RF-SOI which also supports LNA and PA integration. SiGe BiCMOS technologies support the 802.11 FEIC and GPS receiver IC products and may be poised to take a larger share of...
The requirements for silicon foundry technology serving the RF / mixed signal and high performance analog (HPA) market are very different from those intended for mostly digital designs. RF / HPA applications require a rich set of features in a modular platform with accurate RF models for first-pass design success in demanding applications that stress speed, voltage and noise requirements. In this...
SiGe HBT devices with FMAX up to 500GHz have been reported in the past few years [1], suggesting the realization of practical circuits into the THz regime. While the bulk of commercial applications will operate at much lower frequencies, the high level of RF performance realized by these devices can be leveraged to enable better circuit designs at these lower frequencies. In this paper several aspects...
Several mixed-signal components built in a SiGe BiCMOS process are examined for use in mm-wave circuits. The key gain component is the SiGe heterostructure bipolar transistor which is examined in detail. However several other components such as varactors, p-i-n and Schottky diodes are examined for their suitability in performing basic circuit functions in mm-wave designs.
A new SiGe BiCMOS process, SBC18H3 is described which features SiGe HBTs with 240GHz FT and 270 GHz FMAX. The HBT devices are described in detail along with several other mm-wave components included in the process. The process is based on a high-volume manufacturing-proven 0.18um SiGe BiCMOS base platform which has been running at TowerJazz for almost a decade and has been used to produce over 100,000...
This paper details a new 14V Complementary BiCMOS (CBiCMOS) addition to the TowerJazz SBC35 family of BiCMOS technologies. The SBC35 family previously supported BVceo values up to 6V. The bipolar architecture is nearly identical with that used in the lower voltage technologies, leveraging 10 years of manufacturing history. The complementary bipolar transistors are paired with 5V CMOS currently available...
A low parasitic inductance ground for SiGe power amplifiers has been implemented using a deep silicon via (DSV). The advantages and opportunities that this approach opens for the power amplifier (PA) design process are demonstrated. DSV resistance, inductance, and data from IV sweep, RF characterization and load pull measurements are analyzed.
SiGe bipolar transistors with FT of 270 GHz are integrated within a standard 0.18 mum CMOS process flow. These devices are built using the same architecture as Jazzpsila SBC18 SiGe BiCMOS process which has been in high-volume manufacturing for several years. The transistors have an FMAX of 170 GHz but a path to achieving an FMAX equal to FT is demonstrated without the use of selective SiGe epitaxy...
Through 1D device simulations it has been shown that there is some advantage to engineering the shape of the collector profile in SiGe HBT's but only in certain regimes. Power law profiles are shown to be superior to a flat profile only for low breakdown cases. For high-breakdown devices there is little or no advantage to shaping the profile. For the low breakdown case, profiles with their dose distributed...
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