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Several mixed-signal components built in a SiGe BiCMOS process are examined for use in mm-wave circuits. The key gain component is the SiGe heterostructure bipolar transistor which is examined in detail. However several other components such as varactors, p-i-n and Schottky diodes are examined for their suitability in performing basic circuit functions in mm-wave designs.
A new SiGe BiCMOS process, SBC18H3 is described which features SiGe HBTs with 240GHz FT and 270 GHz FMAX. The HBT devices are described in detail along with several other mm-wave components included in the process. The process is based on a high-volume manufacturing-proven 0.18um SiGe BiCMOS base platform which has been running at TowerJazz for almost a decade and has been used to produce over 100,000...
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