The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Interference between single photons lies at the heart of linear optical quantum computing (LOQC). However, the lack of deterministic single photon sources hinders the large-scale experimental demonstration and its practical applications, as the probability to generate N single photons simultaneously (denoted by N-photon hereafter) decreases exponentially with the increasing number of single photon...
The lateral growth of GeSn strips on Si(111) has been successfully achieved by Sn self-catalyzed MBE method. The effect of Sn catalysts on morphology and the quality of the materials were studied. The high quality GeSn on Si will contribute to development of Si-based optoelectronics.
We demonstrate heralded single photon source on a silicon photonic chip by a pump interleaving technique. We have achieved 90±5% enhancement to single photon rate with only 14±2% reduction in quantum signal to noise ratio.
Large magnetoresistance (MR) in non-magnetic semiconductors, especially silicon, the mainstream semiconductor in information technology, attracts a lot of attentions because of its interesting physics and broad applications [1-6]. One pathway to achieve large MR is to utilize the resistance transition resulted from the rectification characteristics of diodes, which is called as diode-assisted MR....
Silicon based Flash memories is the mainstream of the current random access memory (RAM) technique. However, it is close to reach its physical limit for miniaturization. So a few kinds of new RAMs have been proposed such as magnetic RAM (MRAM) [1], phase-change RAM [2] and resistive RAM (RRAM) [3]. RRAM is investigated due to its potential of miniaturization and ultrahigh operation speed. An RRAM...
One of the key issues for the practical application of the current-induced spintronic devices is of reducing the critical current (Ic0) for the current-induced magnetization reversal. The perpendicular magnetic anisotropy (PMA) and high spin polarization of the ferromagnetic layer are theoretically predicted and experimental verified to be useful for reducing the critical current of the magnetic reversal...
ePIXfab brings silicon photonics within reach of European small and medium sized enterprises, thereby building on its track record and its integration into Europractice. To this end, ePIXfab offers affordable access to standardized active and passive silicon photonic IC and packaging technology, a path from design to manufacturing and hands-on training. Based on a consortium of major research institutes...
Numerical simulation of micro-bumped flip chips mounted on a TSV interposer is conducted to study the thermal performance of the package. The 3D package, which consists of two chips, each dissipating 4W, is evaluated under various conditions with its thermal resistances θja θjb, θjc and θjma determined according to JEDEC or MIL-STD standard. Instead of building the detailed model, equivalent thermal...
This paper presents a novel MEMS configuration for three dimensional on-chip fine positioning and mechanical fixing of a ball lens. A MEMS lens holder, which consists of a suspended mass, is attached onto a MEMS active alignment platform to achieve precision alignment and fixing of a ball lens with a diameter of 300µm in silicon photonics packaging. The operational principles of the system as well...
UV laser dicing has many advantages such as mechanical stress-free and dicing shape-free, but it is seldom used to dice multi-layer MEMS wafers because of the deposition of a lot of debris and heat affected zones around the dicing lines. A novel UV laser dicing process based on ablation for thick anodically bonded silicon/glass wafers is presented in this paper. The contamination of the microstructures...
Current methods for the evaluation of solar cell efficiency cannot be applied to extremely thin cells where phenomena from the realm of near-field optics prevail. We use the fluctuation dissipation theorem to calculate the rate of power removal from a semiconductor/metal system. This establishes for the first time, to our knowledge, a rigorous electromagnetic basis for solar cell efficiency analysis...
Hydrogenated amorphous silicon nitride (a-SiNx: H) films were prepared by plasma enhanced chemical vapor deposition (PECVD) with silane and ammonia. After different temperature annealing treatments the bonding configuration and photoluminescence (PL) mechanisms of the samples were studied by Fourier-transform infrared spectroscopy and Fluorescence spectrometer. With the increase of annealing temperature...
This paper reports a 3-dimensional (3D) micro-optical coupling system for improving coupling efficiency in the Littrow configured micro-electro-mechanical system (MEMS) tunable lasers. In the coupling system, an optical fiber acts as a rod lens for light convergence in the vertical plane, while a deep-etched silicon parabolic mirror confines the light in the horizontal plane. Compared with previous...
We report a novel microfluidic surface-enhanced Raman scattering (SERS) device, which is achieved by bonding a polydimethylsiloxane cap with a microchannel structure onto an SERS-active substrate composed of noble-metal covered silicon nanopillar forests. The silicon nanopillar forests are fabricated by using nanomaterial dots, which are introduced in oxygen-plasma bombardment of photoresist, as etching...
Arrays of double-disk structured particles were fabricated with ferromagnetic iron disks separated by nonmagnetic polyimide spacers, to be used as multispectral contrast agents for magnetic resonance imaging (MRI). The advantages of using this contrast agent, compared to currently existing agents, include geometrically dependent spectral signatures, diffusion driven signal amplification, and potentials...
This paper reports a novel silicon platform with integrated MEMS actuators, which is used for fine-positioning and locking of a ball-lens, to address the optical coupling issues in silicon photonics packaging. The fine-positioning and locking function of the ball-lens have been successfully demonstrated by the developed prototype silicon platform. The main adjusting actuator delivered a large force...
This paper reports a miniature MEMS tunable dual-wavelength laser by integrating a gain chip, a beam splitter, and a pair of Bragg reflectors which has different periods. In the experiment, simultaneous two wavelengths emissions are observed with a thermo-optic tuning range of 1574.7 nm to 1578.6 nm and 1576.1 nm to 1582.6 nm, respectively.
The total-dose response of Gep-MOSFETs and p+-n junction diodes fabricated with process variations is reported. Radiation-induced reduction of the on/off current ratio increases with halo-doping density. Increasing the number of Si monolayers at the substrate/dielectric interface reduces total-dose sensitivity for p-MOSFETs. Reduced mobility degradation is observed after irradiation for devices with...
Because of Moore's (scaling/integration) law, the Cu/low-k silicon chip is getting bigger, the pin-out is getting higher, and the pitch is getting finer. Thus, the conventional organic buildup substrates cannot support these kinds of silicon chips anymore. To address these needs, Si interposer with TSV has emerged as a good solution to provide high wiring density interconnection, to minimize CTE mismatch...
In this paper, HfN on Si(100) has similar growth quality and electrical resistivity as HfN on MgO(100) (~30 muOmega-cm ), The resistivity values for HfN films on both substrates are much lower than that of TaN and TiN. Preliminary Cu diffusion test along with its low resistivity suggest that cubic HfN can be a promising candidate for Cu diffusion barriers.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.