Large magnetoresistance (MR) in non-magnetic semiconductors, especially silicon, the mainstream semiconductor in information technology, attracts a lot of attentions because of its interesting physics and broad applications [1-6]. One pathway to achieve large MR is to utilize the resistance transition resulted from the rectification characteristics of diodes, which is called as diode-assisted MR. This MR mechanism was first found in silicon and achieved the remarkable MR performance of 10% at 0.07 T and 100% at 0.2 T at room temperature [6]. In principle, this MR mechanism is universal for all non-magnetic semiconductors, for which, Lorentz force domains the physical origin of magnetic response. Same phenomena of diode-assisted MR were reproduced in other semiconductors, such as GaAs of excellent optic property and Ge of good compatible [7,8]. Improved MR performances in these non-magnetic semiconductors were reported. Recently, benefit from the unique magnetoelectronics symmetry characteristics of diode-assisted MR device, room temperature silicon-based current-controlled reconfigurable MR logic combined with non-volatile memory was realized, which extended the application of silicon-based MR device [9].