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This paper presents a physical model to investigate the random telegraph noise (RTN) as an important source of the stochastic variability in redox-based resistive switching RAMs. Our noise analysis showed a higher level of instability during the high resistance state, where the oxygen vacancies, as the dominant traps inside the oxide, assist the current flow. The role of some important factors like...
In this work the role of the charge transport mechanisms in a Redox-based resistive switching RAM (ReRAM) was investigated using a kinetic Monte Carlo (kMC) algorithm. Thereby the different transport mechanisms and how they behave at different voltage regimes and different kinds of anode-properties were determined.
This paper presents a physical model based on charge transport in order to investigate the electroforming and switching processes of ReRAMs. This model is based on the generation and annihilation of oxygen vacancies (Vö) along the metal-oxide interfaces and their migration through the oxide. The major driving forces governing these processes are the electric field, temperature and temperature gradient...
In this paper we apply a physical model based on kinetic Monte Carlo (KMC) simulations to investigate the electroforming process of ReRAMs. In this model the electric current through the oxide is assisted by oxygen vacancies which are generated at the anode-oxide interface and introduced into the oxide. The major driving forces that control these processes are the electric field, temperature and temperature...
In this paper we have studied both DC size effect and anomalous skin effect caused by surface and grain boundary scattering on the resistivity of Cu thin films by a Monte Carlo method. Contribution of each scattering mechanism and the interaction between them are analyzed separately. A simple and fast numerical recursive method is also introduced to guess the structure of electric field and distribution...
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