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In 1955 Stan Ovshinsky proposed a model of the cognitive behavior of neurons. This led directly to his development of chalcogenide memory and threshold switching devices in 1963. Now five years after his death, 3DXPoint memory is a commercial reality and cognitive models are used in a variety of computing applications. Practical cognitive computers use arrays of graphics processors to model the synaptic...
Artificial neural networks (ANN) have revolutionized the field of machine learning by providing impressive human-like performance in solving real-world tasks in computer vision, speech recognition, or complex strategic games. There is a significant interest in developing non-von Neumann coprocessors for the training of ANNs, where resistive memory devices serve as synaptic elements. However, interdevice...
Perpendicular magnetic tunnel junctions (MTJs) based on MgO/CoFeB structures are of particular interest for spin-transfer torque magnetic random access memories (STT-MRAMs). However, their major challenges of combining both a large tunnel magneto-resistance ratio (TMR) and a low junction resistance, a strong interfacial perpendicular magnetic anisotropy (PMA) for the high thermal stability and a low...
Power dissipation minimization during programming the RRAM array is the key constraint for the choice of the selector. Recently impact ionization based steep-sub-threshold device has been proposed by TCAD simulations. Si NPN based biristor shows steep sub-threshold slope at high bias. We have experimentally demonstrated sub-0.5V impact ionization in Si based NIPIN device. This paper identifies transient...
In this work the role of the charge transport mechanisms in a Redox-based resistive switching RAM (ReRAM) was investigated using a kinetic Monte Carlo (kMC) algorithm. Thereby the different transport mechanisms and how they behave at different voltage regimes and different kinds of anode-properties were determined.
Even though the discovery of ferroelectricity in HfO2 enabled further scaling of ferroelectric (FE) memories, these memories suffer from limited endurance. Recently, we showed how the non-volatility can be induced within the state-of-the-art DRAM capacitor stacks. By using an asymmetric stack, comprising electrodes with different workfunction values an internal bias field can be used to make anti-ferroelectric...
In this paper, we analyze the electrical performance of a novel Phase-Change Memory (PCM) device based on GeS2/Sb2Te3 composition (GSST). Through physico-chemical analysis and electrical characterization we demonstrate a great reduction of the RESET programming current in unitary GSST devices. We show, how both electrical and thermal confinement improvement is achieved in GSST layers, contributing...
Continual growth in the size and functionality of FPGAs over past few years has resulted in an increasing interest in their use for high speed applications. However, the execution speed is limited by the memory access speed and the whole function is affected due to the great amount of data. This paper introduces a novel high speed and high-area efficiency MRAM-based non-volatile look-up table (nvLUT)...
In this paper, we outline the performance enhancement at low current (10 μA) introduced by implementing CBRAM devices were the solid electrolyte is made of two layers with different Cu mobility, enabling to form a hourglass-shaped conductive filament. With such a filament configuration, the CBRAM devices combine a large memory window with high writing speed (10 ns) and a write endurance of 106 cycles,...
The physical principle of redox based resistive switching memory cells is based on ionic and electronic transport propertips. Both normally reveal a strong temperature dependence. A novel heating setup enables to study the influence of high temperatures on the switching mechanism of these memories. It consists of a 100 nm-wide Pt heating line and includes a Pt/Ta2O5/Ta-based ReRAM cell. It is heated...
In this paper, we discuss some of the measurement and analysis techniques for Random Telegraph Noise (RTN). Due to its detrimental impact on devices, RTN mechanism must be investigated and integrated into device models. However, RTN analysis requires a self-consistent framework in which automated measurement techniques, data analysis procedures, and physics-based modeling are blended together. Here...
Low power consumption of high-speed memories such as cache memories will be realized by use of magnetic random access memory (MRAM). We have proposed the voltage-control spintronics memory (VoCSM) as a writing method. The VoCSM has a large operation margin because the current path in writing and the voltage path in reading are separated. The fabrication process we have employed is the two-step self-alignment...
NAND flash is rapidly becoming the media of choice for data storage, due in part to its speed and low power consumption. However, flash wears out through repeated program-erase (P-E) cycling, causing the raw bit error rate (RBER) to increase. Error correction codes (ECCs) are used to detect and correct errors in a sector of data called a codeword. An uncorrectable error occurs when the number of bit...
We present a multiscale modeling platform that exploits ab-initio calculation results and a material-related description of the most relevant defect-related phenomena in dieledtrics (charge trapping and transport, degradation and atomic species motion) to interpret and understand the electrical characteristics of OxRAM memory devices for non-volatile memories and neuromorphic applications. Simulation...
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