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A SiGe HBT is simulated using a deterministic Boltzmann equation solver with full band effects. An anisotropic band structure fitted to full band for high energies significantly improves the simulation of SiGe HBTs with a spherical harmonics expansion solver, especially when it comes to breakdown voltages. This makes it a more efficient alternative to stochastic Monte Carlo simulation.
The Pauli principle is included in a deterministic Boltzmann solver for multi-dimensional semiconductor devices. The Newton-Raphson scheme is applied to solve the nonlinear Boltzmann equation, and it is found that the inclusion of the Pauli principle introduces no numerical problems, even for semiconductor devices. The impact of the Pauli principle is numerically investigated for a scaled SiGe HBT.
In this paper, a deterministic Boltzmann equation solver based on a higher order spherical harmonics expansion, including full-band (FB) effects, is presented. An anisotropic band structure for the conduction band with an invertible energy/wave vector relation has been generated by matching several moments of the group velocity of the silicon FB structure. A generalized formulation of the free-streaming...
The Boltzmann equation is solved by a spherical harmonics expansion including a magnetic force perpendicular to the two-dimensional simulation plane in real space. The new approach is used to verify a methodology for extracting the electron minority mobility of SiGe HBTs. Magnetotransport in a silicon n+nn+ device is simulated and a strong impact of the maximum number of spherical harmonics on the...
In this paper, a deterministic approach to electron transport based on the spherical harmonics expansion of the Boltzmann equation is presented for SiGe heterojunction bipolar transistors. In order to take into account the position-dependent minima of the valleys of the conduction band, a new formulation of the discretized scattering integral for non-aligned and non-equidistant energy grids is developed...
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