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A SiGe HBT is simulated using a deterministic Boltzmann equation solver with full band effects. An anisotropic band structure fitted to full band for high energies significantly improves the simulation of SiGe HBTs with a spherical harmonics expansion solver, especially when it comes to breakdown voltages. This makes it a more efficient alternative to stochastic Monte Carlo simulation.
In this paper, a deterministic Boltzmann equation solver based on a higher order spherical harmonics expansion, including full-band (FB) effects, is presented. An anisotropic band structure for the conduction band with an invertible energy/wave vector relation has been generated by matching several moments of the group velocity of the silicon FB structure. A generalized formulation of the free-streaming...
In this paper, a deterministic approach to electron transport based on the spherical harmonics expansion of the Boltzmann equation is presented for SiGe heterojunction bipolar transistors. In order to take into account the position-dependent minima of the valleys of the conduction band, a new formulation of the discretized scattering integral for non-aligned and non-equidistant energy grids is developed...
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