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Transfer-printing is an emerging technology that enables massively parallel assembly of microscale semiconductor devices onto virtually any target substrate, including glass, plastics, metals or other semiconductors. Transfer-printing is accomplished using a microstructured elastomeric stamp to selectively pick-up devices from a source wafer and then print the devices onto a target substrate. The...
The operational frequency of helical vacuum electron devices has always been limited by the ability of conventional technology to fabricate very small helices, and by the difficulty of passing a meaningful current through the center of such a small structure. Microfabrication technology now offers the possibility of creating helices smaller in outside diameter than a human hair. These helices are...
Transfer printing is a new technique that enables the massively parallel assembly of high performance semiconductor devices onto virtually any substrate material, including glass, plastics, metals or other semiconductors. This semiconductor transfer printing technology relies on the use of an elastomeric molded stamp to selectively pick-up devices from a source wafer and then prints the devices onto...
We demonstrate a fully integrated, on-chip, vacuum microtriode capable of handling voltages up to 800 V. The ability to operate at such high voltages is achieved by the addition of a 10 mum-thick silicon dioxide layer to the device. The device is fabricated using MEMS fabrication principles and utilizes carbon nanotubes as field emitters. A dc amplification factor of 600 was obtained. To the best...
Due to its flexibility and sensitivity, mass spectrometry is a preferred sensing method for applications ranging from explosives detection to air quality monitoring. The key functional elements of a mass spectrometer are ionization, mass separation, and ion detection. This work describes the development of two enabling technologies for the realization of a miniature mass spectrometer -an on-chip electron...
A solenoid-like magnetic-storage element embedded in high-resistivity silicon is presented that maintains well-defined signal and signal return-paths. By not being focused on creating a lumped inductor equivalent, the design space is opened up. At 5 GHz an effective inductance of 1.9 nH with a Q of 30 increasing to a 10.6 nH inductance with a Q of 11 were achieved.
Three-dimensional (3-D) device stacking technologies provide an effective path to the miniaturization of electronic systems. These 3-D stacks can be envisioned to contain, in addition to active device layers, interposers with passive devices. The stackable interposer concept is compatible with any integratable passive device architecture, but is particularly well suited to 3-D enabled passives which...
Prototype 300 and 650 GHz versions of a backward wave oscillator (BWO) based on an intricate diamond structure are being assembled for testing this spring. These sub mm wavelength BWOs will be constructed in a format that combines an electron gun, slow wave circuit, output coupler and transmitting antenna as a monolithic diamond structure. The fabrication process is discussed in this paper.
Here we describe an approach, called transfer printing, to allow the combination of broad classes of materials into three-dimensional (3-D) heterogeneously integrated electronic devices. The process involves fabrication of source wafers that contain high performance single crystal devices from materials including, but not limited to, silicon, gallium arsenide and gallium nitride. These devices are...
Previously, Bower et al. demonstrated a microfabricaied vacuum microtriode with an integrated carbon nanotube field emission cathode. One of the main limitations of the microtriode was the inadequate device insulation which suffered from leakage currents and electrical breakdown at fewer than 200 Volts. Here, we report similar micromachined vacuum electronic devices fabricated to withstand voltages...
This paper describes a technology platform being developed for three-dimensional (3-D) integration of thin stacked silicon integrated circuits (ICs). 3-D integration technology promises to dramatically enhance on-chip signal processing capabilities of a variety of sensor and actuator array devices hybridized with silicon read-out electronics. Currently, advanced 3-D integrated infrared focal plane...
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