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The following topics are dealt with: IC integration; RF components; optical interconnections; IC packaging, IC stacking, IC planarisation; integrated passives devices; LEDs for lighting and display applications; thin-film LED array; through silicon via interconnects; manufacturing technology for advanced packages; package-on-package advanced assembly; drop impact reliability; biomedical and emerging...
Motivations for three-dimensional (3D) integration include reduction in system size, interconnect delay, power dissipation and enabling hyper-integration of chips fabricated using disparate process technologies. Although various low-power commercial products exploit the advantages of improved performance and increased device packing density realized by 3D stacking of chips (using wirebonds), such...
This paper presents results on the process for the embedding and 3D stacking of thin dies developed at IMEC. The embedding build-up is composed of photosensitive dielectric BCB and Copper plated metal films. Successful embedding of 15 mum thick Si dies is shown and electrical connection to pads having a dimension of 35 mum is shown. Preliminary results on stacking will also be presented. Those results...
There is significant interest in 3D interconnect technology due to its capability to provide fast, efficient inter-die interconnects at a minimum package footprint. Intermetallic Cu-Sn bonding has been widely investigated for 3D interconnects. However, the electromigration (EM) intrinsic reliability of the 3D Cu-Sn die-to-die microconnects has not been reported. In this paper the EM performance of...
We have developed a die-to-wafer integration technology for high yield and throughput for the formation of high bandwidth, high performance, and short-distance interconnections in three-dimensional (3D) stack applications. The results show that multiple 70-mum thick die can be successfully assembled in stacks on top of a wafer using a single bonding step, rather than by repeated sequential bonding...
This paper presents micro fabrication process and wafer level integration of a silicon carrier, in which optimized liquid cooling layers are embedded. Two or more carriers can then be stacked together with a silicon interposer in between to make up of a stacked cooling module for high power heat dissipation. Wafer bonding are carried out with AuSn-solder which deposited by evaporation and the shear...
In this paper, a construction of 3D array memory module based on chip-on-film (COF) bonding and carrier stacking is developed. Experimental results are demonstrated on an 1.8" HDD-identical platform, where the total thickness of the stacked 3D array memory module of 8 chips X 8 layers is less than 2 mm at 1.8"-HDD area. All materials to implement this 3D array memory for SSD are lead-free...
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