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The result of the surgery can be seen after a couple of days when complications may occur. Doctors would like to have a tool to monitor and treat the patient during those days, while nowadays for many type of surgeries they can only wait. The authors of this paper are developing the wireless platform which will provide the monitoring and treatment in post-operative cases/patients. The implant includes...
This paper presents a new low-cost, CMOS-compatible and robust wafer-level encapsulation technique developed using a stress-optimised PECVD SiC as the capping and sealing material, imparting harsh environment capability. This technique has been applied for the fabrication and encapsulation of a wide variety of surface- and thin-SOI microstructures that included microcavities, RF switches and various...
We aim to present the principle, design, fabrication and measurement results of a quasi digital accelerometer fabricated on thin silicon-on-insulator (SOI) substrate. The presented device features quasi-digital output, therefore eliminating the need for analogue signal conditioning. The accelerometer can be directly interfaced to digital electronic circuitry. The measurements showed a pull-in voltage...
This paper presents the fabrication process and results of the 3D silicon carbide surface micromachined accelerometer compatible with CMOS processing. PECVD silicon carbide as mechanical material and aluminium as electrodes were used. Due to thermal budget of maximum processing temperature of 400degC, the sensor is fabricated on top of the CMOS readout circuit as a post-processing module. The sensor...
This paper reports the first pull-in time accelerometer made by post-processing surface micromachining technology. As the pull-in time is a semi digital signal, the output of the device can be measured with a fully digital circuit. The sensitivity and nonlinearity are comparable with the differential capacitive sensing devices. Aluminium was used for the mechanical layer, while phosphosilicate glass...
In this paper the principle, design and fabrication process of low-voltage, high speed RF switch is presented. The aluminium as the electrodes and the PECVD silicon carbide were selected as electrodes and shield materials, respectively. The operating voltage as low as 0.8 volt and high switching capacitance ratio of 180 is reported
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