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The electrical properties of carbon nanotube FETs (CNTFETs) have been studied in detail. The conduction type of the CNTFETs was dependent on the work function of the contact metal, which suggests that Fermi level pinning at the metal/nanotube interface is not strong. Chemical doping using F4TCNQ was found to be effective in reducing not only the channel resistance but also the contact resistance....
Silicene, a monolayer of silicon atoms packed into a two-dimensional honeycomb lattice is the challenging hypothetical reflection in the silicon realm of graphene, a one-atom thick graphite sheet, presently the hottest new material in condensed matter physics and nanotechnology. If existing, it would also reveal a cornucopia of new physics and potential applications. Here, we reveal the catalytic...
Highly stable and reliable operation is absolutely required for GaN-based high-efficiency power switching devices and high-power RF AlGaN/GaN HEMTs. For the improvement of operation stability in such devices, in this paper, the surface control technologies will be addressed by introducing an ultrathin-Al-layer process, an electrochemical oxidation and a multi-mesa-channel structure with relevant technologies.
This paper shows electrical characterizations and reliability analysis performed on AlGaN/GaN HEMTs processed on epitaxial layers grown on composite substrates. The results are very promising for the fabrication of low cost high power microwave transistors for wireless communication systems. The composite substrates constitute a valuable alternative to the silicon since better thermal properties are...
The coupling of semiconductor field-effect devices (FEDs) together with chemical and biological recognition elements, like functional intelligent materials, biomolecules and living cells, represents an attractive platform for creating various bio- and chemical sensors, multi-parameter analysis systems and biochips. This paper is focussing on recent developments and current research activities in the...
The prospect for the introduction of III-V semiconductors into the channel of n-type MOSFETs and thus replace Si with a high mobility material for 22 nm technology generation and beyond is examined in detail. The so-called implantfree (IF) III-V MOSFET architecture option is presented showing a fabricated n-type IF demonstrator suitable for scaling. We then focus on a prediction of the potential performance...
The hysteresis properties of GMR layer structures are analysed by direct derivation the domain coercivity distribution probability function from the experimentally obtained set of minor hysteresis loops of magnetoresistance versus applied external magnetic field. The reverse computation of magnetoresistance characteristics is shown. The very good coincidence of computed behavioural characteristics...
This paper presents continuing work on the development of a novel physical model for an advanced GaAs Gunn diode with hot-electron injection. The device itself is commercially manufactured by e2v Technologies (UK) Ltd. for use in 77 GHz automotive Adaptive Cruise Control (ACC) systems. A 2D model has been developed using SILVA CO. Simulated IV characteristics are presented and shown to match well...
The InAlAs/InGaAs material system provides one of the highest transconductance pHEMT devices at a given gate size because of its large conduction band discontinuity, high electron mobility and very good carrier confinement in the channel. The DC characteristics, however, show a sudden rise in drain current at fixed value of drain voltage, resulting in high drain conductance and reduced voltage gain...
Response of Ta2O5 stacks with Al and Au gates to voltage stress at gate injection is studied by probing at various voltage/time conditions. The pre-existing traps govern this response, and the impact of gate-induced defects is stronger. Two processes, electron trapping at pre-existing traps and positive charge build-up, are suggested to be responsible for generation of stress-induced leakage current...
Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control layer and SiO2 or Si3N4 tunnel layers. It was obtained that a properly located layer of Si nanocrystals improves the charging behaviour of the MNOS structures. Memory window width of about 6.6 V and retention time of 41 years has been achieved for charging...
The market for solid-state image sensors has been experiencing an explosive growth in recent years resulting in CMOS sensors rapidly becoming one of the emerging sectors with more projection potential in the semiconductors industry. A CMOS active pixel sensor (APS) with a reverse biased p-n junction photodiode constitutes the structure of more widespread use, and it has been made a viable alternative...
We present a dedicated measurement set-up for the electrical characterization of semiconductor devices and microsystems under very high temperature conditions. The experimental set-up comprises a vacuum system as basic unit and a number of sample stages for different applications. The system enables measurements in the temperature range between room temperature and at least 700degC. We give a detailed...
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