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Electrical properties of silicon-dot-based single-electron memory devices were investigated using numerical simulation. For an accurate calculation of tridimensional electron wave functions in the dots and in the dot-isolation surrounding the nextnano++ simulator was employed. Tunneling rates between the dot and other electrodes were calculated using a post-processing of the electron-state-specific...
In this work we present transient reflectivity measurements, maximum melt depths, and surface topographies of ion implanted silicon samples after pulsed excimer laser thermal annealing in the melting regime. The samples were annealed with different laser energies and number of pulses. We found that the melt dynamics change after the first laser pulse resulting in a shorter melt time but deeper melt...
Ion implantation profiles of boron after a BF3 plasma immersion ion implantation in a plasma implanter with a pulsed voltage ion extraction were investigated both experimentally and by means of numerical simulation. Boron profiles for different ion implantation doses in the range 1015 to 1017 cm−2 were measured using the SIMS method. Simulations were performed using a Monte-Carlo based binary-collision...
We demonstrate the coupling of plasma reactor equipment simulation and feature-scale profile simulation for dry etching of silicon in a chlorine plasma. Equipment simulation delivers fluxes of ions and neutrals, as well as the angular characteristics of the ions. These quantities are fed into a feature-scale simulator based on a Monte Carlo approach for determining relevant quantities on the feature...
The fully overlapped nitride mask defined (FOND) MOSFETs1) exhibit a much better immunity with respect to hot carrier degradation compared to conventional LDD devices. The reason for the better reliability performance of these devices is the special shape of the LDD extentions formed by the FOND process. In order to simulate electrical properties and hot carrier degradation characteristics of FOND...
With a novel delineation technique, the increase in dopant concentration due to ions which have been scattered out of a vertical mask edge during ion implantation was demonstrated. The equiconcentration lines show that the implanted concentration near the mask edge is greater than that in the middle of the implantation window. This effect could be simulated qualitatively with a Monte Carlo simulation...
Is order to establish a rigorous test for the various models used to simulate ion implantation in crystalline silicon. we have implanted 17-150 keV boron ions with low doses into ≪111≫ and ≪100≫ silicon in channeling direction. Simulations using the program MARLOWE show that. impact parameter dependent electronic stopping is essential. The binary collision approximation is fully, justified. Moliere...
For the analytical description of doping profiles after ion implantation, good multilayer models are required to describe the implantation through thin layers, e.g. a scattering oxide or non-vertical mask edges. In this paper, benefits and drawbacks of some published models are discussed, and an improvement is suggested. Comparisons with results from Monte Carlo simulations and SIMS measurements are...
For the measurement of dopant concentrations in two dimensions (2d), a delineation technique has been optimized. The method yields up to three dopant equiconcentration lines in one sample. The concentrations of these lines can be changed by modification of the etching conditions. This technique is applied to the investigation of 2d ion implantation profiles.
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