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In this paper, we present extensive random telegraph signal (RTS) noise characterization in advanced SiGe:C heterojunction bipolar transistors. In frequency domain, in addition to 1/f noise, generation-recombination (G-R) mechanisms are observed at low base bias in the base noise. Their existence is confirmed by RTS noise measurements in time domain. The RTS amplitude evolves rather slowly with bias,...
In this paper, we report an accurate physics-based compact model for monolayer Graphene Field-Effect Transistors (GFETs) based on the density of states (DOS) of monolayer graphene. The charge-based model computes the total current considering a branch separation between the electron and hole contributions preserving a good accuracy near the Dirac point. The effect of back-gate is included in the charge...
A flat band offset at 3 atomic% Ga-doped ZnO (GZO)/1 atomic% Ga-doped Mg0.05Zn0.95O (GMZO) interface is obtained with valence and conduction band offset values of −0.045 and −0.065 eV, respectively. The materials are grown by dual ion-beam sputtering (DIBS) system, and the values of band offsets at the interface are calculated by ultraviolet photoelectron spectroscopy measurement. It is observed that...
In this paper, we report the low-frequency noise characterization of CVD -grown Graphene FETs (GFET). Low-frequency measurements indicate a dominant contribution of 1/f noise in the drain current noise source. A quadratic dependence of the drain current-noise on drain current is observed. An overall comparison between different geometries of the two generations of the CVD GFETs is shown in terms of...
In this paper, a new compact model for Dual-Gate Bilayer Graphene Field-Effect Transistors is presented. The model uses a physics-based density of states (DOS) to compute the current and the charge. Moreover, the effect of back-gate biasing on the flatband voltage, residual carrier density and access resistances is implemented in the model for accurate description of the drain current. The developed...
In this paper, we report a qualitative study on the performances of Graphene on SiC FETs from pulsed measurements as a function of temperature variation, reflecting on the process quality of the graphene FETs. Currents and transconductances in both pulsed and DC measurements as a function of temperature in the 25°C to 75°C range do not show any significant variation which indicates a trap-free interface...
Low-frequency noise characterization of ITO/p-β-FeSi2(Al)/Al/n-Ge(100) heterojunction solar cells is reported. 1/f noise and stress-induced degradation studies are used for the reliability analyses of solar cells. The nature of the burst noise generated from the defects in the p-n junction space-charge region of the solar cell and their bias dependence have been studied in detail. Use of low-frequency...
With rapid downscaling of conventional MOSFETs, alternative device architectures are essential. Post-planar non-classical FinFET structures are becoming a popular choice for their reduced short channel effects, electrostatic integrity as well as superior RF performance. Noise is a fundamental problem for RF circuit design. In this work, to understand RF performance, high frequency noise parameters...
Lattice dynamics, molecular vibrations as well as defects and traps in ultra-thin Hf-based gate dielectrics on Si and strained-SiGe layers have been studied using inelastic tunneling spectroscopy (IETS). Molecular vibrations, phonons, defects and trap-features are identified from IETS of the samples for comparing and analyzing different interface qualities.
Low-frequency noise characteristics in forward-biased silicon iron disilicide solar cells have been studied for reliability analysis. Noise spectral density as a function of frequency is compared for both the p-β-FeSi2 (Al) and p-β-FeSi2 solar cells. Burst noise and its bias dependency have been studied for both the devices.
Electrical properties and reliability of bilayer HfO2 (∼7nm)/Al2O3 (∼3nm) high-k dielectric films prepared by RF sputtering have been studied in detail. It is observed that the bilayer dielectric reduces the frequency dispersion, hysteresis, interface trap charge density (Dit) and gate leakage current density when compared to single layer HfO2. In order to study the degradation mechanisms in Al/HfO...
Phonon spectra and lattice dynamics of silicon and other molecular species are studied in detail using inelastic tunneling spectroscopy (IETS) of p-type Al/SiO2/Si tri-gate FinFETs. Phonon and vibration modes are compared for FinFETs on (100) and (110) silicon substrates. The shift in phonon frequencies depending on the direction of current flow, i.e. substrate orientation, has been demonstrated....
Effect of thickness on transmittance, structure, photoluminescence and surface morphology of sputtered ZnS thin films are studied. Band-gap increases with decreasing thickness. GIXRD shows cubic phase. Crystallinity increases with thickness. Photoluminescence shows peak at 475nm.
Random Telegraph Noise (RTN) characteristics of p-type silicon nanowire FinFET have been studied. It is shown that from multilevel RTN noise characteristics the presence of multiple traps inside the gate oxide may be predicted.
Impact of growth parameters like temperature, coverage and V/III ratio on size and density of metal organic vapour phase epitaxy (MOVPE) grown InP/GaAs quantum dots (QDs) have been studied by using atomic force microscopy technique. It is observed that the QD density saturates after 4.4 MLs of InP coverage. QD density increases and size uniformity improves with the reduction of V/III ratio. A maximum...
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