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Conference proceedings front matter may contain various advertisements, welcome messages, committee or program information, and other miscellaneous conference information. This may in some cases also include the cover art, table of contents, copyright statements, title-page or half title-pages, blank pages, venue maps or other general information relating to the conference that was part of the original...
Semiconductor memories are growing in importance as they are now fundamental in every electronic system and offer new manufacturing and development challenges and opportunities. From a manufacturing point of view, the industry has undergone consolidation and today very few players are able to supply the high wafer volumes required by the global market. From a technology development point of view,...
After more than four decades of semiconductor revolution led by CMOS technology, the ability to shrink transistors by 50% every 18 to 24 months is finally coming to an end. For years, the end of transistor scaling, otherwise known as the end of Moore's law, had been prematurely predicted. Case in point just as the industry thought that the fundamental optical wavelength limit would finally inhibit...
Integrated circuits and devices revolutionized particle physics experiments, and have been a cornerstone in the recent discovery of the Higgs boson by the ATLAS and CMS experiments at the Large Hadron Collider at CERN. Particles are accelerated and brought into collision at specific interaction points. Detectors are giant cameras, about 40 m long by 20 m in diameter, constructed around these interaction...
The complexity of the requirements for automotive applications is increasing at an astonishing pace. Concepts from other domains are being introduced in order to address these demands. For example we now need to cover fault tolerant and failsafe systems. The functional safety of systems, products and processes increases with every day and with every new development and we must maintain a grasp of...
The terahertz gap is a roughly decade-wide spectral band geometrically centered at 1THz, for which neither conventional electronics nor room-temperature photonics is particularly well suited. This paper reviews applications that reside in the gap, mapped against the capabilities of various technologies. Lithographic scaling will deliver devices with adequate small-signal performance in the THz band,...
We review our recent studies at the intersection of energy, nanomaterials and nanoelectronics. Through careful high-field studies of two-dimensional (2D) devices based on graphene and MoS2, we have uncovered details regarding their physical properties and band structure. We have investigated thermoelectric effects in graphene transistors and phase-change memory (PCM) elements for low-power electronics...
We will report our recent research activities to apply ultraflexible and stretchable electronic systems for biomedical applications. First, we describe recent progress of ultraflexible organic devices such as organic thin film transistors (OTFTs), organic photovoltaic cells (OPVs), and organic light-emitting diodes (OLEDs) that are manufactured on ultrathin plastic film with the thickness of 1 μm...
This work presents the first in-depth investigation of data regeneration and disturb immunity of T-RAM cells. Experimental results on deca-nanometer devices reveal that read operations do not compromise cell memory state, contributing, however, to its regeneration only when repeated at high frequency. The separate role of the word-line and the bit-line bias during read is then studied in detail, presenting...
Non-Arrhenius behavior has been reported in a various temperature range for the retention time of CT Flash memories. In order to understand the physical origin of the multiple activation energy due to the non-Arrhenius behavior, we conduct a simulation study using a 3D self-consistent numerical simulator developed in-house. As a result, it is found that both vertical and lateral charge transport in...
This work investigates cycling-induced threshold-voltage instabilities in nanoscale NAND Flash cells as a function of the array background pattern. Instabilities are mainly the result of charge detrapping from the cell tunnel oxide during post-cycling idle/bake periods and represent one of the major reliability issues for multi-level devices. Results reveal, first of all, that instabilities in a (victim)...
In this paper, we analyzed the characteristics of dominant failure mechanisms in the erased (ERS) state of sub 20-nm NAND Flash memory with an accurate compact model. As a result, it was observed that various charge loss and charge gain mechanisms are mixed together. While the detrapping and the interface trap recovery (Nit) mechanism contribute to the charge loss, the trap-assisted tunneling (TAT)...
Combined off-resonance operation and on-off switching of the driving current is applied to a micro-electromechanical systems (MEMS) magnetometer. This novel driving technique allows improving the signal to noise ratio (SNR), and thus the minimum measurable magnetic field, with no added cost in terms of driving current. The technique is applied to a magnetometer built in a surface micromachining process...
Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low power digital electronics. This paper reports the demonstration of the first ring oscillator built using cell-level digital logic elements based on curved NEM switches. The NEM switch has a size of 5×3 μm2, an air gap of 60 nm and is coated with amorphous carbon (a-C)...
The analysis of contact degradation in a not controlled atmosphere (air) at different temperatures in microstructures with electrostatic actuation is the main topic of this study. Different types of devices are subjected to 1 million impact cycles at three different temperatures (25 °C, 40 °C and 55 °C). The electrical properties are shown and the results are explained: a major operating temperature...
Orthogonal pairs of MOS transistor are well known to make excellent high-resolution stress sensors on (100) silicon. In order to properly design these sensors, circuit designers need an understanding of the operating point dependence of the piezoresistive coefficients (pi-coefficients) of the PMOS and NMOS devices. This paper presents the new results for the drain current dependence of the key pi-coefficients...
We present gas sensor devices based on ultrathin SnO2 films, which are integrated on CMOS fabricated micro-hotplate (μhp) chips. Bimetallic nanoparticles (NPs) such as PdAu, PtAu, and PdPt have been synthesized for optimizing the sensing performance of these sensors. We demonstrate that functionalization of nanocrystalline SnO2 gas sensing films with PdAu-NPs leads to a strongly improved sensitivity...
We describe the design and characterization of a new InGaAs/InP Single-Photon Avalanche Diode (SPAD) for single-photon detection at 1.55 μm with high detection efficiency, low noise and low timing jitter. The design and fabrication have been optimized to reduce the defects (responsible for dark counts and afterpulsing). Zinc diffusion is a key step and we optimized the profile, pattern and reactor...
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