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Biological synaptic behavior in terms of long term potentiation has been observed in papain-based (plant protein) memory devices (memristors) for the first time. Improvement in long term potentiation depends on pulse amplitude and width (duration). Continuous/repetitive dc voltage sweep leads to an increase in memristor conductivity leading to a long term memory in the ‘learning’ processes.
We report bipolar resistive switching phenomena observed in different types of plant and animal proteins. Using protein as the switching medium, resistive switching devices have been fabricated with conducting indium tin oxide (ITO) and Al as bottom and top electrodes, respectively. A clockwise bipolar resistive switching phenomenon is observed in all proteins. It is shown that the resistive switching...
Natural silk fibroin protein has been used for the fabrication of bio‐memristors. The origin of the resistive switching characteristics is investigated in detail. The conduction mechanism in silk protein is found to be controlled by multi‐charge transport mechanisms along with filamentary type conduction process. The redox process via hopping mechanism is found to be responsible for charge transport...
Lattice dynamics, molecular vibrations as well as defects and traps in ultra-thin Hf-based gate dielectrics on Si and strained-SiGe layers have been studied using inelastic tunneling spectroscopy (IETS). Molecular vibrations, phonons, defects and trap-features are identified from IETS of the samples for comparing and analyzing different interface qualities.
Prior to applying the digital signal processing techniques for identification of protein coding regions, mapping of DNA alphabet into numerical sequences is necessary. In this paper, the performance of existing DNA to numerical mapping techniques is analyzed at the nucleotide level for the identification of protein coding regions using tapered window based short-time discrete Fourier transform (ST-DFT)...
Ultrathin HfYOx gate dielectric has been deposited on Si0.15Ge0.85 by RF co-sputtering of HfO2 and Y2O3 targets. HfYOx layers were characterized by X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray (EDX) and grazing incidence X-ray diffraction (GIXRD) to examine the composition and crystallinity. An atomic percentage of Hf:Y = 58.35:41.64 was achieved from the EDX analysis while GIXRD...
Characteristics under constant voltage stress from 5 V to 7 V were carried out to monitor the degradation behavior of TaYOx dielectric layers. It is found that capacitance and the voltage at maximum capacitance gradually increase during constant voltage stressing. However, the leakage current density remains almost constant with the injected charge for a certain period of time.
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