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An InGaAs/InAlAs/InP HEMT has been fabricated with 0.15 mum EBL gate, double gate recess and improved Ohmic contact. While maintaining a peak transconductance (Gmp) in excess of 1000 mS/mm, an onstate burnout voltage exceeding 8 V and an operating drain voltage of 5 V have been achieved. A loadpull measurement at 40 GHz was conducted. An output power density of 471 mW/mm, a power-added efficiency...
In this paper a W-band oscillator using Wafer Level Packaging (WLP) technology is reported. To the best of the authors' knowledge this is the first oscillator using a stabilizing cavity resonator created through the use of WLP. By using WLP a cavity consisting of more than one substrate can be created. Since quality factor is directly proportional to volume, a cavity of larger volume will lend itself...
Wafer-level-packaging (WLP) AISb/InAs HEMT receivers have been developed for lightweight and ultralow-power applications. To warrant successful insertion of WLP AISb/InAs HEMT receivers for military and space applications, highreliability demonstration is essential. In this study, we performed three-temperature lifetesting to evaluate the reliability performance of WLP AlSb/InAs HEMT receivers. For...
In most colleges and universities, study abroad focuses on students and curriculum in business, foreign language studies and the natural sciences. In todaypsilas global economy, it is necessary for engineering and technology students to also have significant international experiences. In addition to exposing students to the broad issues of globalization, study abroad is both a career hedge against...
This paper describes a manufacturable and reliable 0.1 μm AlSb/InAs MMIC technology for ultra-low power applications. AlSb/InAs HEMTs have been demonstrated with only one-tenth power dissipation of conventional InAlAs/InGaAs/InP HEMTs. The uniform DC and RF performance of AlSb/InAs HEMTs have been demonstrated on 3-inch GaAs substrates. The further demonstration of reliable AlSb/InAs HEMT technology...
Uniform millimeter wave 0.1 mum InP HEMT MMICs (Ka-band, Q-band, W-band, and distributed amplifiers) on 100 mm InP substrates have been demonstrated. Moreover, high performance and high reliability have been achieved. The results indicate that the readiness of 100 mm InP HEMT technology for insertion to support military/space applications.
Northrop Grumman Space Technology (NGST) has developed a MMIC compatible, hermetic wafer-level packaging (WLP) technology that is proven to be hermetic, mechanically and electrically robust. This WLP technology is an enabling technology for realizing lightweight, multifunctional and low cost modules for current and future space and military systems. In this paper, data obtained from various packaged...
Scanning transmission electron micrographs were used to investigate the gate metal sinking effect in 0.15 mum GaAs PHEMT MMICs subjected to elevated temperature lifetesting. Gate metal sinking causes a decrease of the Schottky barrier height, therefore reducing the Schottky diode's forward turn-on voltage. The progressive gate metal sinking eventually leads to a drastic increase in the three-terminal...
Gate sinking effect of 0.1 mum InAlAs/InGaAs/InP HEMT MMICs (with Pt/Ti/Pt/Au gate metals) subjected to elevated temperature lifetests has been investigated. The results show that Pt sinking is the dominant degradation mechanism caused by Pt diffusing into the In0.52Al0.4As Schottky barrier layer. Pt sinking explains the observed evolutions of Schottky diodes, Ids-Gm transfer characteristics, and...
We narrow the line width of a 1083 nm laser by phase-locking to an Nd:YAG non-planar ring oscillator (NPRO) via an optical frequency comb. The comb transfers the narrow linewidth of the iodine-stabilized NPRO (<2 kHz) from 1064 nm to thousands of wavelengths throughout the visible and infrared regimes. Lasers phase-locked to the comb will have the narrow linewidth of the NPRO. We demonstrate this...
The TeV collider RF source development effort at SLAC is being concentrated on both the high-power conventional klystron followed by some form of RF pulse compression (not necessarily three-stage binary described here) and the CFA. The relativistic klystron provided an excellent experimental source for initial high-gradient accelerator experiments. The induction linac required to make high current...
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