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This paper reports the measured performance results on over 50 discrete GaN HEMTs mounted in high temperature RF/DC test fixtures capable of testing at > 250degC. The RF and DC parameters presented are prior to burn-in and accelerated life testing. Typical device performance variation from room temperature to 250degC is shown. The discussion focuses on the repeatability and consistency of the test...
GaN-on-Si transistors are put through an extensive suite of reliability tests in order to accurately assess the drift characteristics of the technology. Data is presented on DC-HTOL, RF-HTOL, and 3-temperature DC tests. In all cases results are compared with the previous generation of technology and reveal improved results. Highlights include an increase in the activation energy from 1.7eV to 2.0eV...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparing experimental data with numerical device simulations. Simulations indicate that the stress-induced amplification of gate-lag effects and the correlated gate-leakage-current reduction can be ascribed to the generation of acceptor traps at the gate-drain surface. The drop in DC drain current observed...
Metal-insulator-metal (MIM) capacitors are deposited at low temperatures. The dielectrics used for MIM capacitors are amorphous and always contain a certain amount of extrinsic defects. In this paper, the reliability of extrinsic defects in SiNx MIM capacitors as part of a GaAs high voltage (HV) FET process was assessed. It was shown in this paper that the number of extrinsic defects depends on the...
Driven by government environmental directives and market forces, the global electronics industry has continued to migrate toward lead-free electronics. However, a major drawback of using lead-free tin (Sn) finishes is the potential for formation and growth of tin whiskers. In this study, tin whisker characterization tests were conducted on several lead free parts from different package types in accordance...
Reliability investigations and product qualifications are typically built on a set of standard aging methods which are designed to extract degradation that can be statistically analyzed in order to predict lifetimes. This study is intended to reveal information about what happens in the real world in terms of reliability. This information is provided as an account of experiences with supplier-customer...
Freescale's true enhancement mode (EMODE) HIGFET is a high performance single supply technology used for wireless power amplifiers. It is the first technology of its kind to be produced in a high volume manufacturing environment. The EMODE HIGFET intrinsic reliability was evaluated using a conventional three temperature DC accelerated stress test. The device used for these tests has a total gate width...
High frequency power amplifiers have many commercial and military applications. A 0.18mum gate length power pHEMT process with individual source via (ISV) and 2 mil substrate thickness was developed for these applications. During the qualification of this process many reliability techniques such as FMEA, DPA, ESD, HAST, TC, and HTOL were used. Hot electron effect was also evaluated by both step stress...
Scanning transmission electron micrographs were used to investigate the gate metal sinking effect in 0.15 mum GaAs PHEMT MMICs subjected to elevated temperature lifetesting. Gate metal sinking causes a decrease of the Schottky barrier height, therefore reducing the Schottky diode's forward turn-on voltage. The progressive gate metal sinking eventually leads to a drastic increase in the three-terminal...
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