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Scanning transmission electron micrographs were used to investigate the gate metal sinking effect in 0.15 mum GaAs PHEMT MMICs subjected to elevated temperature lifetesting. Gate metal sinking causes a decrease of the Schottky barrier height, therefore reducing the Schottky diode's forward turn-on voltage. The progressive gate metal sinking eventually leads to a drastic increase in the three-terminal...
One responsibility of the reliability engineer is to define the operating region of a component, providing designers and customers with a map of where the reliability is acceptable. This is often called the safe operating area (SOA). In this paper, SOA has been determined in terms of the FIT rate for an HBT across temperature and current density. Careful consideration was given to the temperature...
The usage of electroluminescence for investigating the reliability of GaAs based HBTs has been reported previously (Henderson, 1995, Harris et al., 1998). Electroluminescence is the emission of photons generated by recombination of electrons and holes near a p/n junction at a heterointerface. This technique is commonly used in optoelectronics for determining reliability and robustness of light emitting...
Reliability investigations and product qualifications are typically built on a set of standard aging methods which are designed to extract degradation that can be statistically analyzed in order to predict lifetimes. This study is intended to reveal information about what happens in the real world in terms of reliability. This information is provided as an account of experiences with supplier-customer...
Freescale's true enhancement mode (EMODE) HIGFET is a high performance single supply technology used for wireless power amplifiers. It is the first technology of its kind to be produced in a high volume manufacturing environment. The EMODE HIGFET intrinsic reliability was evaluated using a conventional three temperature DC accelerated stress test. The device used for these tests has a total gate width...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparing experimental data with numerical device simulations. Simulations indicate that the stress-induced amplification of gate-lag effects and the correlated gate-leakage-current reduction can be ascribed to the generation of acceptor traps at the gate-drain surface. The drop in DC drain current observed...
High frequency power amplifiers have many commercial and military applications. A 0.18mum gate length power pHEMT process with individual source via (ISV) and 2 mil substrate thickness was developed for these applications. During the qualification of this process many reliability techniques such as FMEA, DPA, ESD, HAST, TC, and HTOL were used. Hot electron effect was also evaluated by both step stress...
ESD is a well-known reliability aspect in Si technologies, but GaAs devices are more susceptible to ESD damage than the silicon devices. In this study, the ESD survivability of the InGaP HBT transistors and the B-C, B-E/C and BE protect diodes was evaluated. After ESD protection circuits on chip level been investigated, the authors then established a simply B-E diode protection circuit with only 10μmx10μm...
A novel circuit for measuring the infant mortality rate in InGaP/GaAs HBT technology is presented. The circuit allows reliability stressing to be performed on as many as 100,000 transistors per wafer and is necessary in order to predict the infant circuit failure rate in circuits with >500 transistors. This new circuit allows for the identification of failed transistors and subsequent failure analysis...
This paper reports the measured performance results on over 50 discrete GaN HEMTs mounted in high temperature RF/DC test fixtures capable of testing at > 250degC. The RF and DC parameters presented are prior to burn-in and accelerated life testing. Typical device performance variation from room temperature to 250degC is shown. The discussion focuses on the repeatability and consistency of the test...
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