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We have conducted an accelerated temperature, RF Arrhenius life test study of GaN HEMTs delivered under the DARPA Wide Bandgap Semiconductors for RF Applications (WBGS-RF) program. The transistors were embedded in a single-stage MMIC with 50 ohm input and output impedances. The HEMTs were of source-connected field-plate design with a total gate width of 1.25 mm.
Although RE life test is a more definitive technique for RE FET reliability estimation, DC life test is often preferred over RE life test due to its simplicity. In this work, we study how degradation of DC performance in GaN high electron mobility transistors correlates to RE performance degradation in both RE and DC life tests. We show that DC life tests can seriously underestimate device lifetime...
Reliability tests are performed on MOVPE grown AIGaN/GaN HEMTs on SiC from two different wafers, which only differ in an additional cap layer on top of the AIGaN barrier. The tests were conducted at different drain-source voltages and at elevated temperature, but at same power dissipation PDiss. Performance of devices from both wafers are compared; those from the wafer with cap have lower gate leakage...
Methods for determining long term product reliability due to channel temperature, environmental conditions or bias have been thoroughly documented and understood. In contrast, intermittent DC/RF overdrive survivability limits have been looked at, but for the most part not fully understood [1-5]. This is aggravated by the fact that most datasheets only point to one absolute maximum operating value,...
A novel circuit for measuring current gain, β on wafer for a very large number of individual transistors in InGaP/GaAs HBT Technology is presented. The circuit allows for accurately measuring β for as many as 25,000 individual transistors on a single wafer. The circuit gives good predictive capability of the infant failure rate of a given wafer without running a costly, time consuming reliability...
Employing the method of ramped voltage testing, special capacitor test structures are used for defect density monitoring and time-dependent dielectric breakdown (TDDB) studies. In addition, automated optical inspection (AOI) of the test structures during fabrication allows the mapping of electrical failures back to corresponding visual artifacts. This facilitates the identification of the leading...
Wafer-level-packaging (WLP) AISb/InAs HEMT receivers have been developed for lightweight and ultralow-power applications. To warrant successful insertion of WLP AISb/InAs HEMT receivers for military and space applications, highreliability demonstration is essential. In this study, we performed three-temperature lifetesting to evaluate the reliability performance of WLP AlSb/InAs HEMT receivers. For...
Modem high-performance ASICs often must operate with transistor biases high enough that they are in the regime of avalanching. We have conducted long-term (up to 8800 hrs) accelerated lifetesting under avalanche stress conditions on IBM's 120 GHz ft SiGe heteroj unction bipolar transistors ("SiGe7HP") to determine the relevant acceleration parameters, and estimate degradation for typical...
HRTEM observation was conducted to find evidence of physical degradation in AlGaN/GaN heterostructure HEMT devices after life time testing. A strong relationship between electrical degradation and defects formation near the gate edge was observed. Detailed features of physical damages correlated with the degradation mechanism were discussed.
Make observations on HBT testing and how test conditions affect projected MTTF and Ea. Baseline bias stress data for TQS BiHEMT process active devices: HBT, D-mode pHEMT, E-mode pHEMT.
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