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Nowadays vacuum circuit breaker(VCB) is widely used in medium voltage networks. Back-to-back capacitive bank switching is the most severe duty among capacitive current switching duties because the amplitude of the inrush current is very large. In this paper, a unique VCB prototype was investigated. This VCB has ability of back to back capacitor bank switching as well as breaking short circuit current...
In this paper, the material implication logic gate has been realized using memristors. A memristor can be used as a logic gate or a latch which is known as ‘stateful logic’ [8]. All logic gate realizations have been presented using material implication. A new realization of two carry lookahead adder architectures based on material implication has been proposed. A performance comparison with conventional...
Memory circuit elements — resistors, capacitors and inductors with memory — are electronic components with great potential in a wide range of applications. In particular, they are ideally suited to enhance all three major computing paradigms: binary, analog and quantum. Here, we consider how to achieve a faster computation with these elements. Specifically, we will show that a binary logic architecture...
SF6 gas is known as an effective insulator due to its high dielectric characteristics. Because of this property, it is widely used in the field of high voltage pulse systems and compact electrical distribution sites. But this gas belongs to one of greenhouse gases, and is shrinking in use throughout the world. On the other hand, distilled water is very good insulating material for the spark gap switch...
Asymmetric multi-core systems represent an increasingly popular class of computer architecture due to their potential performance and power efficiency. Gridware is an innovative and effective computing model used to design asymmetric multi-core systems. However, scheduling of fusions in Asymmetric multi-core systems is still a challenging problem. This work proposes a distributed scheduling framework...
We will present experiments on the MAGPIE facility (1.5MA, 250ns) in which an inverse wire array1 (with the wires acting as a return current cage placed around a central current conductor) operated as a fast current switch. This allowed to significantly reduce the rise-time of the current pulse (<100ns) delivered to a separate, standard imploding wire array z-pinch load. The set-up also generates...
We propose the feasibility of bidirectional selection device characteristics in ultrathin (<3nm) TiO2 layer. We utilized the localized conducting path as virtual electrode to investigate device property at extremely scaled area. By using electrical method such as “forming” and “reset” processes in oxide, virtual electrode/sub-3nm-thick TiO2/virtual electrode structure was achieved. The measured...
4F2 selector-less crossbar array 2Mb ReRAM test chip with 54nm technology has been successfully integrated for high cell efficiency and high density memory applications by implementing parts of decoders to row/column lines directly under the cell area. Read/write specifications for memory operation in a chip are presented by minimizing sneak current through unselected cells. The characteristics of...
In this paper, we present some video podcasts which will be used as a complement for several subjects corresponding to the new Industrial Electronic engineering grade that is given at the University of Jaén High Technical College. The aim is to contribute to develop a new teaching culture, which implies innovation and methodological changes focused on practice, skills development and ICTs use, according...
After introducing advantages and disadvantages of usual measurement methods, this paper describes a measurement method of high DC voltage. Firstly, it presents the principle of measurement which is named Resistive Voltage divider using six resistances, the strong and high chopped voltage with range form 0 to 500V can be converted into weak and low voltage with range from 0 to 5V. Then it introduces...
This paper gives an overview of recent works on metal oxide resistive switching memory (RRAM). We explored the stochastic nature of resistive switching in metal oxide RRAM and a 2-D analytical solver was established to explain the switching parameter variations in HfOx-based RRAM. As an example of application beyond digital memory/storage, AlOx-based RRAM was explored for neuromorphic computing.
Computational Science became crucial techniques for designing future micro electronics engineering. In this paper, we describe the examples which aim the designing of future micro electronics devices such as charge trap memories and resistive random access memories based on the computational science.
In this paper, the effect of tunnel barrier and device structure for the reliable and low power resistive switching operation was researched in the HfO2 based ReRAM system. From the experimental results, the Al2O3 thin layer as the tunnel barrier lowered the operation current and improved thermal stability for the stable switching operation. Moreover, the additional decrease of the operation current...
In this paper, recalling the key problems in the development of semiconductor refrigeration system powered by Photo-voltaic (PV) cells, we focus on the design of impedance matching circuit by which the system performance can be optimized to work under maximum power point (MPP) condition. A demo system that coordinates the PV cell, semiconductor refrigerator and proposed matching circuit is designed...
Recently, memory and storage have taken a front seat in computer hardware as it experiences an explosive growth at a rate faster than Moore's law for the past 10 years. With the upcoming challenges for further FLASH scaling into the next generations, emerging technologies have appeared portraying perspectives with the potential to shift computer architecture concepts. Here we present a brief overview...
Recent advancements in resistive switching cell are based on three conduction mechanisms - electrochemical (ECM), Valence-change (VCM) and thermo-chemical (TCM). In the ECM type cells, migration of anions, typically oxygen ions, towards the anode, and reduction of the cation sublattice provide either metallically or semiconducting phases and triggers a bipolar memory operation. The major factors determining...
The hysteretic nature of the filamentary electron transport in MIM/MIS resistive switching devices is modeled within the framework of the Landauer theory for mesoscopic conductors. It is shown that a two-equation system, one equation for the current-voltage (I–V) characteristic of a nano-sized constriction and a second equation for the time dependence of the confining potential yield the wide variety...
This paper investigates the re-design and evaluation of an existing anchored discussion system. The purpose of the re-design is to focus social construction of knowledge on relevant information from online academic texts. We developed three prototype software environments: teacher-based attention guidance, peer-oriented attention guidance, and control condition. The evaluation of the re-design involved...
We present preliminary results towards realization of three dimensional material implication logic with monolithically stacked TiO2-based memristive devices. As a first step towards our goal we have fabricated and successfully demonstrated resistive switching for top and bottom layer memristors of the bilayer device stack. The 3D aspect of the circuits, which is a main novelty of our work, enables...
Video surveillance systems are important part of today's organizations. When there is no live observation of the cameras image, it is important to have some alarm mechanisms for detection of physical impact against the cameras. Most simple video systems can detect motion and/or loss of video signal, but are vulnerable to covering or spraying the camera's lenses. Present study proposes a method for...
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