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This paper presents three single balanced down-converting mixer designs in CMOS 65 nm technology. The three designs operate at 95 GHz and reach a maximum conversion gain of 8, 6.9 and 10.2 dB respectively. Due to the use of single balanced topology, the designs occupy a relatively small core area of 0.89×0.51, 0.078×0.14 and 0.053×0.17 mm2 and their DC power consumption is only 26, 29 and 12.4 mW.
This paper discusses an active on-chip multiplier for mm-wave generation, implemented in CMOS 65nm TSMC technology. The multiplying is done within single stage, which is connected via wire bonds to 4 stage PA, reducing the DC power consumption to 360 mW, 80 mW for the multiplying stage and 280 mW for the PA. Total core silicon area of 0.92 mm2, 0.31 mm2 the multiplier area and 0.61 mm2 the PA area...
A low power receiver at V band for multi users Gb/s communication is reported. The device operates in three bands from 52GHz to 57GHz. The die includes a wide band LNA, a sub harmonic mixer, an IF amplifier and a driver to 50 Ohm output load. The direct conversion architecture was chosen to achieve a high adjacent channel rejection. The receiver requires an external lower frequency LO signal thanks...
In this paper, a UHF-RFID power management circuit is presented. It is able to power body sensor networks nodes, starting from −25dBm UHF-RFID input signal power. It is based on an initial Dickson's RF-DC rectifier circuit, followed by an ultra-low-voltage integrated boost converter, realized in 180nm CMOS technology, that is used to further step-up of the rectified DC-voltage and to guarantee the...
A high-efficiency integrated full-wave CMOS rectifying charge pump using diode-connected PMOS transistors for radio-frequency (RF) energy harvesting was designed. Leakage current and body effect were taken into account in deriving the output voltage, power consumption and power conversion efficiency (PCE) of the rectifying charge pump. Negative rectifying charge pump was introduced to handle full-wave...
This paper introduces a direct conversion transmitter for IEEE 802.15.4 applications with a high gain up-conversion mixer. An RF DCT (Direct Conversion Transmitter) is composed of differential-ended DAC (Digital to Analog Converter), passive low pass filter, quadrature active mixer, and drive amplifier. The most important thing in designing RF direct conversion transmitter is satisfying 2.4GHz Zigbee...
With recent technique advancement, CMOS silicon-on-insulator (SOI) technology seems to be attractive for the implementation of the RF, Microwave and millimeter-wave circuits and systems due to its excellent feature of lower loss, lower noise and good power handling capabilities as compared to its CMOS counterpart. This paper is going to study the state of the art CMOS SOI processes and the applications...
A 5.2-GHz fully-integrated RF front-end combining the design of a T/R switch, an LNA, and a PA is presented for single-chip solution on CMOS. Based on the concept of circuit co-design, components are properly reused in order to minimize signal losses and chip area. The proposed RF front-end requires no off-chip components while demonstrates an NF of 3.2 dB in the receive mode, and a saturated output...
A technique is presented to improve both the input 1-dB compression point (IP1dB) and the third-order intercept point (IP3) of a mixer using real-time knowledge of the incident RF power to the mixer plus look-up tables (LUTs) that contain measured performance data of mixer under different bias conditions. The concept is applied to an active mixer designed in-house on 130 nm CMOS technology. The mixer...
This invited paper provides an overview of important attributes of a BiCMOS process in designing high-performance mm-wave integrated circuits, and contends, through several design examples, that it is perhaps one of the best process technologies for wireless applications that seek both high level of integration and high performance. In comparative study of BiCMOS performance compared to Silicon CMOS...
In this work, low and high temperature environmental tests were conducted on a switching mode RF CMOS power amplifier according to the MIL-STD-810G standard. The efficiency of the power amplifier was increased by 5% at −32 °C while it was decreased by 4% at 63 °C. In order to determine the influence of interconnects on the performance, the effect of temperature on single bond wires of different lengths...
A low-voltage and low-power mixer using 0.18 μm CMOS technology is presented in this paper. The proposed mixer uses a weak inversion biasing technique in a source-driven topology. For high conversion gain, current reuse technique is applied to the input buffers. Moreover, the bulk-biased technique is used to achieve low supply voltage. The source-driven mixer exhibits a conversion gain of 8.68 dB,...
This paper presents a highly linear low-band 706MHz LTE compatible class-O RF power amplifier in 130nm CMOS technology for handheld wireless applications. Class-O topology uses a combination of common-source and common-drain amplifiers working in parallel with high linearity without the need for digital predistortion(DPD). With continuous wave measurements, 1-dB compression point (P1dB) of 30.6dBm...
This paper presents ultra low power hybrid energy harvesting start-up circuit for 1V , implemented in a standard 0.18 µm CMOS technology. It consists of solar and RF energy harvesters, capable to harvest ambient solar and RF sources respectively. The start-up circuit enables operation of the system even in the absence of any one of these ambient energy sources. The integration of solar and RF on a...
A design of a MOS Gilbert mixer cell intended for LTE band 28 is presented in this work. The objective is directed to a design with low noise and low third-order intermodulation distortion. The designed mixer can be used in a fully-differential chain, avoiding the implementation of a balun. Since the overall IP3 of a full front-end depends on the IP3 of the each stage, specially those behind the low-noise...
This paper presents the study of transient radiation effects in SOI CMOS RF IC's and discrete MOS transistors. Experiments show that the sensitivity of SOI RF IC's (gain blocks, mixers, VCO etc.) to transient irradiations (dose rate) is mainly determined by the transient response of RF characteristics i.e. output power, output frequency, power / conversion gain, rather than supply transient photocurrent...
This paper presents a methodology to design voltage controlled oscillators. The usefulness of the design proposal is shown by designing a LC oscillator in a 130nm CMOS technology, intended for Bluetooth/Zigbee applications. From simulations results, when temperature varies from 0 to 100°C, power consumption ranging from 3.1mW to 3.81mW is achieved. At 3.4mW of power consumption, a phase noise of −119...
A K-band UWB quadrature receiver with a precision rectifier for non-coherent detection of pulses is implemented in 90 nm CMOS. The LNA topology is a Common Gate - Common Source topology followed by a double-balanced Gilbert mixer for down conversion. Without the rectifier the measured peak conversion gain is 10 dB with a –3 dB bandwidth of 4.4 GHz and a NF of 15 dB consuming 50 mA. To rectify the...
Integration of RF power amplifier (PA) in CMOS technology can help to reduce total solution cost and achieve small form factor in modern communication systems. To improve overall efficiency of the power amplifier supporting modulated signals with very high peak-to-average power ratio (PAPR), new transmitter and PA architectures are being explored by researchers. This paper reviews some of our recent...
A novel circuit for precise phase detection between two signals with the same frequency is presented. It is shown how the non-idealities in conventional phase detectors give rise to nonlinearities in the average voltage vs. phase characteristic. The proposed circuit makes use of a pair of XNOR-type phase detectors, to which signal and quadrature reference clocks are applied. A decision circuit then...
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